US4742013A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of a semiconductor laser with tape geometry and laser obtained by this process
Assignee: Individual
•
Filing: 1986-05-14
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Granted: 1988-05-03
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Expires: 2006-05-14
Abstract
Abstract Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process. After producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating. This is followed by local annealing by focussing an appropriate energy source. The electrical conduction properties of the annealed part are restored and it is doped. Thus, a p-doped conductive tape is produced between two electrically insulating parts above the active zone of the laser, which increases the current confinement in said zone. The disclosed invention is used in optical telecommunications.
Inventors
- 👤 Louis Menigaux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:06
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01S5/2054; H01S5/2059; Y; Y10; Y10S; Y10S148/00; Y10S148/094
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
88 words
A process for the production of a semiconductor laser, comprising the steps of: forming a double heterostructure on a substrate, said double heterostructure comprising a first confinement layer, an active layer, a second confinement layer and a contact layer, implanting in the contact layer and in part of the second confinement layer a p-type doping impurity with an energy and dose such that the implanted zone is made amorphous, irradiating the implanted structure with a focussed high energy beam able to recrystallize the amorphous zone along a tape.
Claim 2
Dependent Claim
88 words
A process for the production of a semiconductor laser, comprising the steps of: forming a double heterostructure on a substrate, said double heterostructure comprising a first confinement layer, an active layer, a second confinement layer and a contact layer, implanting in the contact layer and in part of the second confinement layer a p-type doping impurity with an energy and dose such that the implanted zone is made amorphous, irradiating the implanted structure with a focussed high energy beam able to recrystallize the amorphous zone along a tape.
Claim 3
Dependent Claim
33 words
A process according to claim 1, wherein said high energy beam is a focussed optical radiation, the double heterostructure and radiation being displaced rectilinearly with respect to one another to obtain a tape.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-03 | 1991-11-02 | 1992-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-03 | 1995-11-02 | 1996-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-03 | 1999-11-02 | 2000-05-03 | $7700.00 | Window Closed / Lapsed |