US4536940A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a loss stabilized buried heterostructure laser
Assignee: Nokia Bell Labs
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Filing: 1984-06-04
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Granted: 1985-08-27
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Expires: 2004-06-04
Abstract
Abstract A buried heterostructure laser which obtains lowest mode operation by larger differences in loss between the lowest and higher order modes is described. The loss is achieved by interface scattering between the mesa and the burying layer. The scattering losses increases with refractive index discontinuity, interface roughness and decreasing mesa width. Stabilization results because scattering losses increase rapidly with the order of the transverse modes.
Inventors
- 👤 Charles H. Henry
- 👤 Ralph A. Logan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
93 words
A method of fabricating at least one buried double heterostructure laser comprising the steps of sequentially growing first, second and third semiconductor layers on a semiconductor substrate, said second layer having a bandgap less than the bandgaps of said first and said third layers, said second layer being an active layer, etching a mesa having width fluctuations by removing portions of said first, second and third semiconductor layers thereby exposing said substrate and growing a fourth semiconductor layer, said fourth layer contacting opposite side faces of said first, second and third semiconductor layers.
Claim 2
Independent Claim
93 words
A method of fabricating at least one buried double heterostructure laser comprising the steps of sequentially growing first, second and third semiconductor layers on a semiconductor substrate, said second layer having a bandgap less than the bandgaps of said first and said third layers, said second layer being an active layer, etching a mesa having width fluctuations by removing portions of said first, second and third semiconductor layers thereby exposing said substrate and growing a fourth semiconductor layer, said fourth layer contacting opposite side faces of said first, second and third semiconductor layers.
Claim 3
Dependent Claim
14 words
A method as recited in claim 1 in which said etching uses a mask.
Claim 4
Dependent Claim
14 words
A method as recited in claim 2 in which said mask is edge roughened.
Claim 5
Dependent Claim
34 words
A method as recited in claim 2 in which at least a first and a second double heterostructure laser are fabricated, said first and second double heterostructure lasers being spaced by approximately 15 μm.
Claim 6
Dependent Claim
40 words
A method as recited in claim 2 which said layers comprise Al x Ga 1-x As, x in said fourth layer being approximately 0.65, x in said first, second and third layers being at least 0.20 percent less than 0.65.
Claim 7
Dependent Claim
50 words
A method as recited in claim 5 comprising the further steps of masking said third layer to leave selected portions of said layer exposed, etching slits in said third layer so as to expose said active layer, and positioning a mask over said etched slits prior to said mesa etching.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-26 | 1989-02-25 | 1989-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-26 | 1993-02-25 | 1993-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-26 | 1997-02-25 | 1997-08-27 | $7700.00 | Window Closed / Lapsed |