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US4737470A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making three dimensional structures of active and passive semiconductor components

Assignee: Texas Instruments Inc
•
Filing: 1986-09-12
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Granted: 1988-04-12
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Expires: 2006-09-12
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Abstract

Abstract The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle and extending to the surface. The substrate surface is designed to lie in a predetermined crystallographic plane of the substrate material and the grooves extend in a predetermined crystallographic direction from said plane, this being accomplished by orientation dependent etching.

Inventors

  • 👤 Kenneth E. Bean

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; Y; Y10; Y10S; Y10S148/00; Y10S148/164; Y10S438/00; Y10S438/973; Y10S438/98

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 83 words
A method of forming a three dimensional semiconductor structure comprising the steps of: (a) providing a semiconductor substrate having a surface defining a predetermined crystallographic plane of said substrate; (b) etching grooves extending to said surface and defined by walls in said substrate in a predetermined crystallographic direction of said substrate; (c) forming a first semiconductor component on said surface; (d) forming a second semiconductor component on a said wall; and (e) electrically interconnecting said first semiconductor component and said second semiconductor component.
Claim 2
Independent Claim 83 words
A method of forming a three dimensional semiconductor structure comprising the steps of: (a) providing a semiconductor substrate having a surface defining a predetermined crystallographic plane of said substrate; (b) etching grooves extending to said surface and defined by walls in said substrate in a predetermined crystallographic direction of said substrate; (c) forming a first semiconductor component on said surface; (d) forming a second semiconductor component on a said wall; and (e) electrically interconnecting said first semiconductor component and said second semiconductor component.
Claim 3
Dependent Claim 18 words
A method as set forth in claim 1 wherein said said second semiconductor component extends into said wall.
Claim 4
Dependent Claim 24 words
A method as set forth in claim 1 wherein said connecting means is disposed on at least one of said walls and said surface.
Claim 5
Dependent Claim 24 words
A method as set forth in claim 2 wherein said connecting means is disposed on at least one of said walls and said surface.
Claim 6
Dependent Claim 14 words
A method as set forth in claim 1 wherein said crystallographic plane is (110).
Claim 7
Dependent Claim 14 words
A method as set forth in claim 2 wherein said crystallographic plane is (110).
Claim 8
Dependent Claim 14 words
A method as set forth in claim 3 wherein said crystallographic plane is (110).
Claim 9
Dependent Claim 14 words
A method as set forth in claim 4 wherein said crystallographic plane is (110).
Claim 10
Dependent Claim 14 words
A method as set forth in claim 5 wherein said crystallographic direction is <110>.
Claim 11
Dependent Claim 14 words
A method as set forth in claim 6 wherein said crystallographic direction is <110>.
Claim 12
Dependent Claim 14 words
A method as set forth in claim 7 wherein said crystallographic direction is <110>.
Claim 13
Dependent Claim 14 words
A method as set forth in claim 8 wherein said crystallographic direction is <110>.

References Cited (Backward Citations)

US3579057A Cited
US3962713A Cited
US4065742A Cited
US3893228A Cited
US4017885A Cited
US3969746A Cited
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US4069463A Cited
US4353086A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-04-12 1991-10-12 1992-04-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-04-12 1995-10-12 1996-04-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-04-12 1999-10-12 2000-04-12 $7700.00 Window Closed / Lapsed

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