Thick film copper conductor inks

Claim 2

A copper conductor ink comprising, on a weight basis: (a) from about 65 to about 85 percent of copper powder; (b) from about 5 to about 15 percent of a glass frit comprising, on a weight basis: from about 52 to 53 percent of zinc oxide; from about 25 to 26 percent of boron trioxide; from about 6 to 8 percent of silicon dioxide; from about 7 to 12 percent of lead oxide; from about 2 to 5 percent of aluminum oxide; from 0 to about 2 percent of antimony trioxide; and from 0 to about 1 percent of cerium oxide; (c) from about 1 to about 4 percent of bismuth oxide; and (d) from about 5 to about 25 percent of a suitable organic vehicle.

Claim 3

A copper ink in accordance with claim 1, wherein the ink comprises, on a weight basis: from about 75 to about 80 percent of copper powder; from about 6 to about 9 percent of the glass frit; from about 2 to about 3 percent of bismuth oxide; and from about 12 to about 16 percent of the organic vehicle.

Claim 4

A copper ink in accordance with claim 1, wherein said glass frit comprises, on a weight basis; about 52.5 percent of zinc oxide; about 25.4 percent of boron trioxide; about 7.3 percent of silicon dioxide; about 9.7 percent of lead oxide, about 3.7 percent of aluminum oxide; about 1.1 percent of antimony trioxide and about 0.3 percent of cerium oxide.

Claim 5

In a multilayer, copper-based, integrated circuit structure comprising a suitable substrate having thereon at least two patterned layers of a copper conductor, said layers being separated by a dielectric layer having vias therein, said vias being filled with copper to contact said conductor layers, the improvement wherein said copper conductor layers comprise, on a weight basis: (a) from about 70 to about 94 percent of copper powder; (b) from about 5 to about 18 percent of a glass frit comprising, on a weight basis: from about 52 to 53 percent of zinc oxide; from about 25 to 26 percent of boron trioxide; from about 6 to 8 percent of silicon dioxide; from about 7 to 12 percent of lead oxide; from about 2 to 5 percent of aluminum oxide; from 0 to about 2 percent of antimony trioxide; and from 0 to about 1 percent of cerium oxide; and (c) from about 1 to about 4 percent of bismuth oxide.

Claim 6

In a multilayer, copper-based, integrated circuit structure comprising a suitable substrate having thereon at least two patterned layers of a copper conductor, said layers being separated by a dielectric layer having vias therein, said vias being filled with copper to contact said conductor layers, the improvement wherein said copper conductor layers comprise, on a weight basis: (a) from about 70 to about 94 percent of copper powder; (b) from about 5 to about 18 percent of a glass frit comprising, on a weight basis: from about 52 to 53 percent of zinc oxide; from about 25 to 26 percent of boron trioxide; from about 6 to 8 percent of silicon dioxide; from about 7 to 12 percent of lead oxide; from about 2 to 5 percent of aluminum oxide; from 0 to about 2 percent of antimony trioxide; and from 0 to about 1 percent of cerium oxide; and (c) from about 1 to about 4 percent of bismuth oxide.

Claim 7

A circuit structure in accordance with claim 4, wherein said substrate is an alumina substrate.

Claim 8

A circuit structure in accordance with claim 4, wherein said glass frit comprises, on a weight basis: about 52.5 percent of zinc oxide; about 25.4 percent of boron trioxide; about 7.3 percent of silicon dioxide; about 9.7 percent of lead oxide, about 3.7 percent of aluminum oxide; about 1.1 percent of antimony trioxide and about 0.3 percent of cerium oxide.