MOSFET buffer circuit with an improved bootstrapping circuit

Claim 2

A semiconductor circuit comprising: first and second terminals and input and output terminals; a load MOS transistor and a driver MOS transistor which are connected between said output terminal and said first and second terminals, respectively; bootstrap capacitive means connected between said output terminal and a gate of said load MOS transistor; inverting means for inverting an input signal supplied to said input terminal and supplying an inverted signal to a gate of said driver MOS transistor after a predetermined delay time; and a switching MOS transistor having a current path connected between said input terminal and the gate of said load MOS transistor and having a threshold voltage greater than a threshold voltage of said driver MOS transistor.

Claim 3

A semiconductor circuit according to claim 1, wherein said inverting means comprises a depletion-type MOS transistor having a source-drain current path connected in series between the first and second terminals with a source-drain current path of an enhancement-type MOS transistor, the gate of said depletion-type MOS transistor being connected to the drain of said depletion-type MOS transistor, and the gate of said enhancement-type MOS transistor being connected to said input terminal.

Claim 4

A semiconductor circuit according to claim 1 or 2, wherein a gate of said switching MOS transistor is directly connected to said first terminal.

Claim 5

A semiconductor circuit comprising: first and second terminals and input and output terminals; a load MOS transistor and a driver MOS transistor which are connected between said output terminal and said first and second terminals, respectively; bootstrap capacitive means connected between said output terminal and a gate of said load MOS transistor; inverting means for inverting an input signal supplied to said input terminal and supplying an inverted signal to a gate of said driver MOS transistor after a predetermined delay time; a switching MOS transistor which has a current path connected between said input terminal and the gate of said load MOS transistor; and constant gate voltage applying means for applying a gate voltage lower than a voltage applied to said first terminal to a gate of said switching MOS transistor.

Claim 6

A semiconductor circuit comprising: first and second terminals and input and output terminals; a load MOS transistor and a driver MOS transistor which are connected between said output terminal and said first and second terminals, respectively; bootstrap capacitive means connected between said output terminal and a gate of said load MOS transistor; inverting means for inverting an input signal supplied to said input terminal and supplying an inverted signal to a gate of said driver MOS transistor after a predetermined delay time; a switching MOS transistor which has a current path connected between said input terminal and the gate of said load MOS transistor; and constant gate voltage applying means for applying a gate voltage lower than a voltage applied to said first terminal to a gate of said switching MOS transistor.

Claim 7

A semiconductor circuit according to claim 4, wherein said inverting means comprises a depletion-type MOS transistor having a source-drain current path connected in series between the first and second terminals with the source-drain of an enhancement-type MOS transistor, the gate of said depletion-type MOS transistor being connected to the drain of said depletion-type MOS transistor, and the gate of said enhancement-type MOS transistor being connected to said input terminal.

Claim 8

A semiconductor circuit according to claim 4 or 5, wherein said gate voltage applying means comprises first and second resistive means which are connected between the gate of said switching MOS transistor and said first and second terminals, respectively.

Claim 9

A semiconductor circuit according to claim 6, wherein each of said first and second resistive means comprises at least one resistor.

Claim 10

A semiconductor circuit according to claim 6, wherein each of said first and second resistive means comprises at least one enhancement-type MOS transistor.

Claim 11

A semiconductor circuit according to claim 6, wherein each of said first and second resistive means comprises at least one depletion-type MOS transistor.

Claim 12

A semiconductor circuit comprising: first and second and input and output terminals; a load MOS transistor and a drive MOS which are connected between said output terminal and said first and second terminals, respectively; bootstrap capacitive means connected between said output terminal and a gate of said load MOS transistor; inverting means for inverting an input signal supplied to said input terminal and supplying an inverted signal to a gate of said drive MOS transistor after a predetermined delay time, said inverting means including a depletion-type MOS transistor having a source-drain current path connected in series between the first and second terminals with a source-drain current path of an enhancement-type MOS transistor; a switching MOS transistor which has a current path connected between said input terminal and the gate of said load MOS transistor; and constant gate voltage applying means for applying a gate voltage lower than a voltage applied to said first terminal to a gate of said switching MOS transistor.

Claim 13

A semiconductor circuit comprising: first and second and input and output terminals; a load MOS transistor and a drive MOS which are connected between said output terminal and said first and second terminals, respectively; bootstrap capacitive means connected between said output terminal and a gate of said load MOS transistor; inverting means for inverting an input signal supplied to said input terminal and supplying an inverted signal to a gate of said drive MOS transistor after a predetermined delay time, said inverting means including a depletion-type MOS transistor having a source-drain current path connected in series between the first and second terminals with a source-drain current path of an enhancement-type MOS transistor; a switching MOS transistor which has a current path connected between said input terminal and the gate of said load MOS transistor; and constant gate voltage applying means for applying a gate voltage lower than a voltage applied to said first terminal to a gate of said switching MOS transistor.

Claim 14

A semiconductor circuit according to claim 10, wherein said gate voltage applying means is formed of a depletion-type MOS transistor having a current path and a gate, one end of said current path being connected to said first terminal, and the other end of said current path and said gate being connected to the gate of said switching MOS transistor and to the other end of the current path of said depletion-type MOS transistor of said inverting means.