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US4724218A
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US
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Method of forming a semiconductor device having several gate levels
Assignee: Thales SA
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Filing: 1986-06-12
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Granted: 1988-02-09
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Expires: 2006-06-12
Abstract
Abstract The invention provides a method for forming a semiconductor device having several gate levels, which, in the case of forming a device with two gate levels, comprises the following steps: 1. on a semiconductor substrate are deposited a dielectric layer, then a layer of material in which the gates of the first level are to be formed and a dielectric layer; 2. the gates of the first level are formed by etching the two upper layers; 3. the sides of the gates of the first level are isolated; 4. a second layer is deposited of material in which the gates of the second level are to be formed; 5. in this second layer an opening is formed giving access to the dielectric layer covering the top of the gates of the first level; 6. by plasma etching or by chemical etching the zones of said second layer which overhang the gates of the first layer are removed by etching them simultaneously on their internal and external faces.
Inventors
- 👤 Pierre Blanchard
- 👤 Jean P. Cortot
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D44/00; H10D44/01; H10D44/041
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
201 words
A method for forming a semiconductor device with at least two gate levels, comprising the following steps: a. on a seimiconductor substrate is depositied a dielectric layer, then a laeyr of material in which the gates of the first level are formed, and a dielectric layer; b. etching the two upper layers to pattern the gates of the first level; c. forming an insulating layer on the sides of the gates of the first level; d. depositing a second layer of material in which the gates of the second layer are to be formed; e. locally opening the second layer so as to expose a central portion of the dielectric layer covering a gate of the first level while leaving portions of the second layer above the sides of said gate of the first level; f. removing, through the opening in the second layer, the dielectric layer covering the gate of the first level, so as to expose the internal portion of the second layer overhanging the sides of the gate; g. etching, from inside the opening in the second layer and from outside said opening, portions of the second layer overhanging the sides of the gate of the first level.
Claim 2
Independent Claim
201 words
A method for forming a semiconductor device with at least two gate levels, comprising the following steps: a. on a seimiconductor substrate is depositied a dielectric layer, then a laeyr of material in which the gates of the first level are formed, and a dielectric layer; b. etching the two upper layers to pattern the gates of the first level; c. forming an insulating layer on the sides of the gates of the first level; d. depositing a second layer of material in which the gates of the second layer are to be formed; e. locally opening the second layer so as to expose a central portion of the dielectric layer covering a gate of the first level while leaving portions of the second layer above the sides of said gate of the first level; f. removing, through the opening in the second layer, the dielectric layer covering the gate of the first level, so as to expose the internal portion of the second layer overhanging the sides of the gate; g. etching, from inside the opening in the second layer and from outside said opening, portions of the second layer overhanging the sides of the gate of the first level.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein, between step (d) and step (e) a thick oxide layer is deposited on the gates of the second layer.
Claim 4
Independent Claim
59 words
The method as claimed in one of the claims 1 and 2 for forming a semiconductor device with two gate levels wherein, during the last step, the etching of the layer of material in which the gates of the second level are to be formed is adjusted so that substantially half of the thickness of this layer is removed.
Claim 5
Dependent Claim
118 words
A method according to claim 2, wherein between step (e) and step (f), and in order to form further gate levels, the following additional steps are performed: (i) a thin insulating layer is formed where the second layer of gates has been exposed during step (e); (ii) depositing a third layer of material in which the gates of a third level are to be formed; (iii) etching the third layer to pattern the gates of the third layer; and wherein step (f) includes removing portions of the thick oxide layer deposited between steps (d) and (e), and wherein step (g) includes etching portions of the third layer overhanging the sides of gates of the first or second level.
Claim 6
Dependent Claim
42 words
A method according to claim 1, wherein during step (g) etching is adjusted in duration so that substantially half of the thickness of the second layer is removed from outside the opening in the second layer and half from inside the opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-08 | 1991-08-10 | 1992-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-08 | 1995-08-10 | 1996-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-08 | 1999-08-10 | 2000-02-09 | $7700.00 | Window Closed / Lapsed |