US4141024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensing device
Assignee: Sony Corp
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Filing: 1978-05-02
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Granted: 1979-02-20
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Expires: 1998-05-02
Abstract
Abstract A solid state image sensing device having a semiconductor substrate, an insulating layer disposed on one major surface of the substrate, plural channel stopper regions formed in the substrate in faced relation to the major surface of the substrate, each channel stopper region being extended in the column direction with a distance between adjacent ones and plural sets of electrodes disposed over the insulating layer, each set including a pair of electrode members, each electrode member being extended in the row direction, in which a window portion is formed in the pair of electrode members at one side of the distance between adjacent channel stopper regions and the width of the window portion in the column direction is selected more than a predetermined value.
Inventors
- 👤 Yasuo Kano
- 👤 Hiroshi Yamazaki
- 👤 Tetsuo Ando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D44/474; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
238 words
A solid state image sensor device comprising: (a) a semiconductor substrate of one conductivity type; (b) an insulating layer formed on a first surface of said substrate; (c) a plurality of channel stopper regions of said one conductivity type having a higher impurity concentration than said substrate formed in said substrate adjacent to said first surface, said channel stopper regions extending in parallel in a first direction with a distance between adjacent channel stopper regions defining transfer channels therebetween; (d) a plurality of sets of electrodes formed on said insulating layer over said transfer channels, each set of which includes a lower electrode member and a higher electrode member, a second insulating layer covering said lower electrode member of each set and separating said higher electrode member from said lower electrode member, said lower electrode member being formed closer to said substrate than said higher electrode member, each of said electrode members extending in a second direction transverse to said first direction, both sides of each of said higher electrode members along said extending direction overlapping an adjacent side of said lower electrode member; and (e) a plurality of window portions over said transfer channels formed in said sets of electrodes, each portion formed through at least one of said electrode members, which comprise portions of said insulating layers, said window portions being located at one edge of said transfer channel adjacent one of said channel stopper regions.
Claim 2
Dependent Claim
238 words
A solid state image sensor device comprising: (a) a semiconductor substrate of one conductivity type; (b) an insulating layer formed on a first surface of said substrate; (c) a plurality of channel stopper regions of said one conductivity type having a higher impurity concentration than said substrate formed in said substrate adjacent to said first surface, said channel stopper regions extending in parallel in a first direction with a distance between adjacent channel stopper regions defining transfer channels therebetween; (d) a plurality of sets of electrodes formed on said insulating layer over said transfer channels, each set of which includes a lower electrode member and a higher electrode member, a second insulating layer covering said lower electrode member of each set and separating said higher electrode member from said lower electrode member, said lower electrode member being formed closer to said substrate than said higher electrode member, each of said electrode members extending in a second direction transverse to said first direction, both sides of each of said higher electrode members along said extending direction overlapping an adjacent side of said lower electrode member; and (e) a plurality of window portions over said transfer channels formed in said sets of electrodes, each portion formed through at least one of said electrode members, which comprise portions of said insulating layers, said window portions being located at one edge of said transfer channel adjacent one of said channel stopper regions.
Claim 3
Dependent Claim
33 words
A solid state image sensor device as claimed in claim 1, wherein the width of each of said window portions in said first direction is selected to be more than a predetermined value.
Claim 4
Dependent Claim
18 words
A solid state image sensor device as claimed in claim 2, wherein said predetermined value is 4 microns.
Claim 5
Dependent Claim
21 words
A solid state image sensor device as claimed in claim 1, wherein said window portions partially overlap said channel stopper regions.
Claim 6
Dependent Claim
27 words
A solid state image sensor device as claimed in claim 1, wherein each of said electrodes is made of a polycrystalline silicon with an impurity doped thereinto.
Claim 7
Dependent Claim
185 words
A solid state image sensor device comprising: (a) a semiconductor substrate of one conductivity type; (b) an insulating layer formed on a first surface of said substrate; (c) a plurality of channel stopper regions of said one conductivity type having a higher impurity concentration than said substrate formed in said substrate adjacent to said first surface, said channel stopper regions extending in parallel in a first direction with a predetermined distance between adjacent channel stopper regions defining transfer channels therebetween; (d) a plurality of electrodes formed on said insulating layer over said transfer channels, said electrodes extending in a second direction transverse to said first direction with a gap between adjacent electrodes; (e) a plurality of semi-insulating layers formed on said insulating layer, each of said semi-insulating layers being disposed between adjacent electrodes; and (f) a plurality of window portions over said transfer channels formed between adjacent electrodes and through said semi-insulating layers which comprise portions of said insulating layer which are not covered by said electrodes and semi-insulating layers at one side of said transfer channel adjacent to one of said channel stopper regions.
Claim 8
Dependent Claim
185 words
A solid state image sensor device comprising: (a) a semiconductor substrate of one conductivity type; (b) an insulating layer formed on a first surface of said substrate; (c) a plurality of channel stopper regions of said one conductivity type having a higher impurity concentration than said substrate formed in said substrate adjacent to said first surface, said channel stopper regions extending in parallel in a first direction with a predetermined distance between adjacent channel stopper regions defining transfer channels therebetween; (d) a plurality of electrodes formed on said insulating layer over said transfer channels, said electrodes extending in a second direction transverse to said first direction with a gap between adjacent electrodes; (e) a plurality of semi-insulating layers formed on said insulating layer, each of said semi-insulating layers being disposed between adjacent electrodes; and (f) a plurality of window portions over said transfer channels formed between adjacent electrodes and through said semi-insulating layers which comprise portions of said insulating layer which are not covered by said electrodes and semi-insulating layers at one side of said transfer channel adjacent to one of said channel stopper regions.
Claim 9
Dependent Claim
22 words
A solid state image sensor device as claimed in claim 6, in which said window portions partially overlap said channel stopper regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-19 | 1982-08-21 | 1983-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-19 | 1986-08-21 | 1987-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-19 | 1990-08-21 | 1991-02-20 | $7700.00 | Window Closed / Lapsed |