US4012587A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensor
Assignee: Sony Corp
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Filing: 1976-01-26
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Granted: 1977-03-15
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Expires: 1996-01-26
Abstract
Abstract In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.
Inventors
- 👤 Shigeyuki Ochi
- 👤 Seisuke Yamanaka
- 👤 Yasuo Kanou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:56
CPC Classifications
C; C07; C07C; C07C17/00; C07C17/26; C07C17/32; H; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H04N25/73; H04N25/40; H04N25/41; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
115 words
A solid state image sensor employing charge transfer devices comprising: a. a plurality of image pickup portions aligned in two dimensions in areas of a semiconductor body, each image pickup portion having an image storing area and a transfer gate area; b. a plurality of vertical shift registers extending adjacent said image pickup portions in the vertical direction, each vertical shift register having a plurality of electrode sets having enlarged portions which lie between said image pickup portions relative to the vertical direction; and c. a horizontal register for receiving collected light information from said plurality of vertical shift registers in parallel and for supplying the light information in a serial form to an output.
Claim 2
Dependent Claim
115 words
A solid state image sensor employing charge transfer devices comprising: a. a plurality of image pickup portions aligned in two dimensions in areas of a semiconductor body, each image pickup portion having an image storing area and a transfer gate area; b. a plurality of vertical shift registers extending adjacent said image pickup portions in the vertical direction, each vertical shift register having a plurality of electrode sets having enlarged portions which lie between said image pickup portions relative to the vertical direction; and c. a horizontal register for receiving collected light information from said plurality of vertical shift registers in parallel and for supplying the light information in a serial form to an output.
Claim 3
Dependent Claim
46 words
A solid state image sensor as claimed in claim 1, in which two of said image pickup portions aligned in the vertical direction form one group, and one of said electrode sets of each vertical shift register extends between the image pickup portions of each group.
Claim 4
Dependent Claim
30 words
A solid state image sensor as claimed in claim 2, in which said groups of image pickup portions are aligned in adjacent columns, said groups being vertically located to interleave.
Claim 5
Dependent Claim
43 words
A solid state image sensor as claimed in claim 1, in which the image pickup portions aligned in one vertical column and one vertical shift register form one vertical sensing arrangement, and an isolation area being formed between the adjacent vertical sensing arrangements.
Claim 6
Dependent Claim
43 words
A solid state image sensor as claimed in claim 2, in which the image pickup portions aligned in one vertical column and one vertical shift register form one vertical sensing arrangement, and an isolation area being formed between the adjacent vertical sensing arrangements.
Claim 7
Dependent Claim
43 words
A solid state image sensor as claimed in claim 3, in which the image pickup portions aligned in one vertical column and one vertical shift register form one vertical sensing arrangement, and an isolation area being formed between the adjacent vertical sensing arrangements.
Claim 8
Dependent Claim
106 words
A solid state image sensor adapted for using charge coupled transfer devices, comprising: a. a semiconductor body; b. image pickup means arranged in parallel columns on said semiconductor body; c. vertical shift register means adjacent said columns of image pickup means, said vertical shift register means comprising a plurality of electrode sets, each electrode set comprising first and second electrodes which extend between at least some of the image pickup means in said columns; and d. horizontal register means on said semiconductor body for receiving collected light information from said vertical shift register means and for supplying said light information in serial form to an output.
Claim 9
Dependent Claim
106 words
A solid state image sensor adapted for using charge coupled transfer devices, comprising: a. a semiconductor body; b. image pickup means arranged in parallel columns on said semiconductor body; c. vertical shift register means adjacent said columns of image pickup means, said vertical shift register means comprising a plurality of electrode sets, each electrode set comprising first and second electrodes which extend between at least some of the image pickup means in said columns; and d. horizontal register means on said semiconductor body for receiving collected light information from said vertical shift register means and for supplying said light information in serial form to an output.
Claim 10
Dependent Claim
42 words
An image sensor as claimed in claim 7, in which said image pickup means are grouped in pairs in each column, the pairs in adjacent columns being spaced to interleave, and said electrode sets extending between vertically adjacent pairs of said columns.
Claim 11
Dependent Claim
26 words
An image sensor as claimed in claim 7, in which one electrode set extends between each of the vertically adjacent image pickup means in said columns.
Claim 12
Dependent Claim
50 words
An image sensor as claimed in claim 7, in which said vertical shift register means have electrode sets which extend between interleaved pairs of pickup means on both sides of said vertical shift register means whereby a single vertical shift register means collects information from two columns of pickup means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-14 | 1980-09-13 | 1981-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-14 | 1984-09-13 | 1985-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-14 | 1988-09-13 | 1989-03-15 | $7700.00 | Window Closed / Lapsed |