Patent US4719501A successfully refreshed from Google Patents.
US4719501A
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Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers
Assignee: Canon Inc
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Filing: 1985-12-26
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Granted: 1988-01-12
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Expires: 2005-12-26
Abstract
Abstract A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 ANGSTROM and/or a particular range of etching rate when etched with a predetermined etchant.
Inventors
- 👤 Katsumi Nakagawa
- 👤 Toshiyuki Komatsu
- 👤 Yutaka Hirai
- 👤 Yoshiyuki Osada
- 👤 Satoshi Omata
- 👤 Takashi Nakagiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:19
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/80; H10D30/87; H10D30/875; H10D62/00; H10D62/40; H10D8/00; H10D8/60; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F71/00; H10F71/134; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
83 words
A semiconductor device comprising, in sequence, a substrate, a polycrystalline silicon thin film on the substrate having a semiconductor junction formed by an interface of a first polycrystalline layer having a first type of electroconductivity and a second polycrystalline layer having a second type of electroconductivity, wherein the film surface at the interface has an uneveness substantially not more than 800 Å at its maximum and wherein the layers constituting the film each contain from about 0.01 to 3 atomic percent of hydrogen.
Claim 2
Dependent Claim
83 words
A semiconductor device comprising, in sequence, a substrate, a polycrystalline silicon thin film on the substrate having a semiconductor junction formed by an interface of a first polycrystalline layer having a first type of electroconductivity and a second polycrystalline layer having a second type of electroconductivity, wherein the film surface at the interface has an uneveness substantially not more than 800 Å at its maximum and wherein the layers constituting the film each contain from about 0.01 to 3 atomic percent of hydrogen.
Claim 3
Dependent Claim
111 words
A semiconductor device comprising, in sequence, a substrate, a polycrystalline silicon thin film on the substrate having a semiconductor junction formed by an interface of a first polycrystalline layer having a first type of electroconductivity and a second polycrystalline layer having a second type of electroconductivity, wherein the etching rate of the layers constituting the film are each 20 Å/sec or less by etching with an etchant comprising a mixture of 50 volume percent of an aqueous solution of hydrofluoric acid and glacial acetic acid at a mixing ratio by volume of 1:3:6 and wherein the layers constituting the film each contain from about 0.01 to 3 atomic percent of hydrogen.
Claim 4
Dependent Claim
111 words
A semiconductor device comprising, in sequence, a substrate, a polycrystalline silicon thin film on the substrate having a semiconductor junction formed by an interface of a first polycrystalline layer having a first type of electroconductivity and a second polycrystalline layer having a second type of electroconductivity, wherein the etching rate of the layers constituting the film are each 20 Å/sec or less by etching with an etchant comprising a mixture of 50 volume percent of an aqueous solution of hydrofluoric acid and glacial acetic acid at a mixing ratio by volume of 1:3:6 and wherein the layers constituting the film each contain from about 0.01 to 3 atomic percent of hydrogen.
Claim 5
Dependent Claim
39 words
A semiconductor element according to claim 1 in which the first polycrystalline silicon thin film layer has a diffraction pattern of which the diffraction strength at the (220) plane is 30% or more based on the total diffraction strength.
Claim 6
Dependent Claim
39 words
A semiconductor element according to claim 2 in which the first polycrystalline silicon thin film layer has a diffraction pattern of which the diffraction strength at the (220) plane is 30% or more based on the total diffraction strength.
Claim 7
Dependent Claim
27 words
A semiconductor element according to claim 1 in which the average crystal grain size of the first polycrystalline silicon thin film layer is 200 Å or more.
Claim 8
Dependent Claim
27 words
A semiconductor element according to claim 2 in which the average crystal grain size of the first polycrystalline silicon thin film layer is 200 Å or more.
Claim 9
Dependent Claim
13 words
The semiconductor element according to claim 1 in which the substrate is glass.
Claim 10
Dependent Claim
13 words
The semiconductor element according to claim 2 in which the substrate is glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-11 | 1991-07-13 | 1992-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-11 | 1995-07-13 | 1996-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-11 | 1999-07-13 | 2000-01-12 | $7700.00 | Window Closed / Lapsed |