US4425379A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polycrystalline silicon Schottky diode array
Assignee: National Semiconductor Corp
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Filing: 1981-02-11
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Granted: 1984-01-10
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Expires: 2001-02-11
Abstract
Abstract A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.
Inventors
- 👤 Madhukar B. Vora
- 👤 Hemraj K. Hingarh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D8/00; H10D8/60; H10B; H10B20/00; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D86/00; H10D86/01; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/435
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
A process for fabricating an array of Schottky diodes comprising: depositing a layer of a metal-silicide on an underlying dielectric layer; depositing a layer of polycrystalline silicon on the layer of metal-silicide; removing selected portions of the layer of polycrystalline silicon and the layer of metal-silicide to thereby create a plurality of electrically isolated regions of polycrystalline silicon on metal-silicide; forming a layer of dielectric over at least all portions of the metal-silicide layer exposed by the removing step; and fabricating regions of metal over a selected portion of the polycrystalline silicon, the metal-polycrystalline silicon interface forming a Schottky diode connected between the metal and the metal-silicide.
Claim 2
Dependent Claim
107 words
A process for fabricating an array of Schottky diodes comprising: depositing a layer of a metal-silicide on an underlying dielectric layer; depositing a layer of polycrystalline silicon on the layer of metal-silicide; removing selected portions of the layer of polycrystalline silicon and the layer of metal-silicide to thereby create a plurality of electrically isolated regions of polycrystalline silicon on metal-silicide; forming a layer of dielectric over at least all portions of the metal-silicide layer exposed by the removing step; and fabricating regions of metal over a selected portion of the polycrystalline silicon, the metal-polycrystalline silicon interface forming a Schottky diode connected between the metal and the metal-silicide.
Claim 3
Dependent Claim
24 words
The process as in claim 1 wherein the step of removing selected portions of the layer of polycrystalline silicon is accomplished using anisotropic etching.
Claim 4
Dependent Claim
47 words
A process as in claim 1 wherein the step of forming a layer of dielectric comprises oxidizing the exposed portions of the layer of polycrystalline silicon and the layer of metal-silicide and subsequently removing the resulting oxidation from said selected portions of the layer of polycrystalline silicon.
Claim 5
Dependent Claim
20 words
A process as in claim 3 wherein the step of removing the resulting oxidation is accomplished using an anisotropic etching.
Claim 6
Dependent Claim
35 words
A process as in claim 1 wherein the step of removing selected portions of the layer of polycrystalline silicon comprises removing parallel strips of the layer of polycrystalline silicon to create equally spaced parallel strips.
Claim 7
Dependent Claim
50 words
A process as in claim 5 wherein the step of fabricating regions of metal comprises depositing a layer of metal and removing parallel strips which are perpendicular in orientation to the strips of polycrystalline silicon to thereby leave the parallel strips of metal perpendicular to the strips of polycrystalline silicon.
Claim 8
Dependent Claim
31 words
A process as in claim 6 wherein the step of forming a layer of dielectric comprises oxidizing all exposed portions of the layer of polycrystalline silicon and the layer of metal-silicide.
Claim 9
Dependent Claim
32 words
A process as in claim 7 wherein the step of forming a layer of dielectric further comprises removing the dielectric from the polycrystalline silicon wherever a Schottky diode is to be formed.
Claim 10
Dependent Claim
32 words
A process as in claim 1 wherein the step of depositing a layer of polycrystalline silicon is followed by a step of doping the deposited layer of polycrystalline silicon with an impurity.
Claim 11
Dependent Claim
19 words
A process as in claim 9 werein the impurity is introduced into the polycrystalline silicon with a graded concentration.
Claim 12
Dependent Claim
33 words
A process as in claim 10 wherein the graded concentration is higher at the lower surface of the layer of polycrystalline silicone than at the upper surface of the layer of polycrystalline silicone.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-09 | 1987-07-11 | 1988-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-09 | 1991-07-11 | 1992-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-09 | 1995-07-11 | 1996-01-10 | $7700.00 | Window Closed / Lapsed |