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US4717602A
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Method for producing silicon nitride layers
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-07-24
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Granted: 1988-01-05
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Expires: 2006-07-24
Abstract
Abstract A silicon nitride layer is formed on a substrate by reacting (1) silicon fluoride, (2) nitrogen or nitrogen hydride and (3) nitrogen fluoride by a chemical vapor deposition method using thermal energy and/or optical energy. According to the invention process, fluorine is added to the silicon nitride layer to make Si--F bonds, by which the amount of Si--H bonds can be reduced less than 1/10 as compared with that of silicon nitride made by the conventional reaction between SiH 4 and HN 3 . Silicon nitride layer according to the invention will highly enhance the reliability of IC, LSI.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338; H10P14/66; H10P14/668; H10P14/6681; H10P14/6336; H10P14/6682
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
84 words
A method for depositing a silicon nitride comprising: supplying a quantity of silicon fluoride gas and a quantity of hydrogen nitride gas to the vicinity of a surface on which the silicon nitride is to be deposited; carrying out a chemical reaction between the silicon fluoride and hydrogen nitride, yielding hydrogen fluoride as a by-product in addition to silicon nitride depositing as the product; and reacting the hydrogen fluoride with any oxygen containing substance in the product to remove the oxygen from the product.
Claim 2
Independent Claim
84 words
A method for depositing a silicon nitride comprising: supplying a quantity of silicon fluoride gas and a quantity of hydrogen nitride gas to the vicinity of a surface on which the silicon nitride is to be deposited; carrying out a chemical reaction between the silicon fluoride and hydrogen nitride, yielding hydrogen fluoride as a by-product in addition to silicon nitride depositing as the product; and reacting the hydrogen fluoride with any oxygen containing substance in the product to remove the oxygen from the product.
Claim 3
Dependent Claim
25 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein the fluoride gas is SiF 2 or SiF 4 .
Claim 4
Dependent Claim
32 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein a thermal energy (500° to 1000° C.) is applied to a reactive gas mixture of silicon fluoride
Claim 5
Dependent Claim
15 words
gas including Si n F 2n+2 (n=2,3 . . . ) and a nitride gas.
Claim 6
Dependent Claim
15 words
gas including Si n F 2n+2 (n=2,3 . . . ) and a nitride gas.
Claim 7
Dependent Claim
30 words
A method for producing a silicon nitride layer as set forth in claim 3, wherein the silicon fluoride gas is Si 2 F 6 or Si 3 F 8 .
Claim 8
Dependent Claim
22 words
A method according to claim 1, wherein said reaction in carried out according to the formula: 3SiF.sub.2 +2N.sub.2 H.sub.4 →Si.sub.3 N.sub.4 +6HF+H.sub.2
Claim 9
Dependent Claim
46 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein a thermal energy and an optical energy having a wave length less than 300 nm is applied to a gas mixture composed of SiF 2 , ammonia, hydrazine and fluorine nitride.
Claim 10
Dependent Claim
22 words
A method according to claim 1, wherein said reaction is carried out according to the formula: 3Si.sub.2 F.sub.6 +8NH.sub.3 →2Si.sub.3 N.sub.4 +18HF+3H.sub.2
Claim 11
Dependent Claim
49 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein a thermal energy and an optical energy having a wave length less than 300 nm is applied to a reactive gas mixture composed of Si 2 F 6 and ammonia, hydrazine or fluorine nitride.
Claim 12
Dependent Claim
31 words
A method for producing silicon nitride layer as set forth in claim 6 or claim 8, wherein the optical energy is Excimer laser having a wavelength of 100 to 500 nm.
Claim 13
Dependent Claim
80 words
A thermal CVD process for preparing a silicon nitride layer having an oxygen concentration of 5×10.sup.19 cm.sup.-3 or less, which comprises applying a thermal energy to a reactive mixture of ilicon fluoride gas and hydrogen nitride gas in a reaction chamber containing a substrate to deposit a silicon nitride layer on said substrate and from HF as a by-product; and reacting the HF with any oxygen containing substance in the silicon nitride layer to remove the oxygen from the layer.
Claim 14
Dependent Claim
80 words
A thermal CVD process for preparing a silicon nitride layer having an oxygen concentration of 5×10.sup.19 cm.sup.-3 or less, which comprises applying a thermal energy to a reactive mixture of ilicon fluoride gas and hydrogen nitride gas in a reaction chamber containing a substrate to deposit a silicon nitride layer on said substrate and from HF as a by-product; and reacting the HF with any oxygen containing substance in the silicon nitride layer to remove the oxygen from the layer.
Claim 15
Dependent Claim
93 words
A photo CVD process for preparing a silicon nitride layer having an oxygen concentration of 5×10 19 cm -3 or less, which comprises applying a thermal energy and an optical energy having a wavelength less than 300 nm to a reactive mixture of silicon fluoride gas and hydrogen nitride gas in a reaction chamber containing a substrate to deposit a silicon nitride layer on said substrate and form HF as a by-product; and reacting the HF with any oxygen containing substance in the silicon nitride layer to remove the oxygen from the layer.
Claim 16
Dependent Claim
93 words
A photo CVD process for preparing a silicon nitride layer having an oxygen concentration of 5×10 19 cm -3 or less, which comprises applying a thermal energy and an optical energy having a wavelength less than 300 nm to a reactive mixture of silicon fluoride gas and hydrogen nitride gas in a reaction chamber containing a substrate to deposit a silicon nitride layer on said substrate and form HF as a by-product; and reacting the HF with any oxygen containing substance in the silicon nitride layer to remove the oxygen from the layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |