Abstract A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.
Inventors
👤 Shoji Hirata
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-01 06:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
123 words
A method of manufacturing a distributed feedback type semiconductor laser comprising a first cladding layer 2, an active layer 3 disposed on said first cladding layer, a guiding layer 4 disposed on said active layer and a second cladding layer 7 disposed on said guiding layer respectively, in which a grating 8 is disposed to said guide layer, wherein the method comprises the steps of: forming a predetermined material layer on said guide layer, selectively etching said material layer and said guide layer until said guide layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of said material layer and said guiding layer, and forming said second cladding layer so as to cover said unevenness.
Claim 2
Independent Claim
123 words
A method of manufacturing a distributed feedback type semiconductor laser comprising a first cladding layer 2, an active layer 3 disposed on said first cladding layer, a guiding layer 4 disposed on said active layer and a second cladding layer 7 disposed on said guiding layer respectively, in which a grating 8 is disposed to said guide layer, wherein the method comprises the steps of: forming a predetermined material layer on said guide layer, selectively etching said material layer and said guide layer until said guide layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of said material layer and said guiding layer, and forming said second cladding layer so as to cover said unevenness.
Claim 3
Dependent Claim
28 words
The method set forth in claim 1 wherein the undulation portion formed in said material layer is at least partially removed prior to forming said second cladding layer.