Manufacture of semiconductor laser having periodic structure

Abstract

Abstract PURPOSE:To make the rugged faces of the semiconductor layer of the titled device to generate no deformation when the semiconductor layer is formed by a method wherein stripe type semiconductor layers of a large number are formed on the semiconductor layer having the rugged faces, and a different semiconductor layer is formed on the stripe type semiconductor layers thereof in this condition. CONSTITUTION:Semiconductor layers 2, 3, 4 are formed in order as a buffer layer, an active layer and a clad layer on a semiconductor substrate 1. Then, stripe type mask layers 5 are formed on the layer. The stripe type semiconductor layers 6 of a large number are formed using the layers 5 as the mask. Then the layers 5 are removed, and the semiconductor layer 8 having the rugged faces 7 is formed from the layer 3 according to the melt back treatment using the layers 6 as the mask. The semiconductor layer 9 to act as the clad layer, and having the different composition from the layer 3 is formed on the layer 8 burying the layers 6. A semiconductor layer 10 is formed as the layer for provision of an electrode on the layer 9 in succession. According to this manufacturing method, even when the surface of the layer 8 is molten back in a solution for formation of the layer 9, unnecessary deformation of the rugged faces 7 provided to the layer 8 is not generated.

Inventors

• 👤 Etsuo Noguchi
• 👤 野口　悦男
• 👤 Yoshio Suzuki
• 👤 鈴木　与志雄
• 👤 Haruo Nagai
• 👤 治男 永井

Bibliographic Details