JPS51114067A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Liquid phase epitaxial growth towards the top of alxga1-xas base
Assignee: NTT Inc
•
Filing: 1975-04-01
•
Granted: —
•
Expires: 1995-04-01
Abstract
Abstract PURPOSE:Liquid phase epitaxial growth conducted in an atmosphere containing halogen compounds to promote growth of ALyCa1-yAs(or GaAs) on an ALxGa1xAs base without meltback process.
Inventors
- 👤 Yoshiharu Horikoshi
- 👤 Yoshitaka Furukawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 11:33
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.