Abstract Using a method according to one embodiment of the present invention, an EPROM array may be fabricated providing a dense EPROM array. First the polycrystalline silicon floating gates are formed and partially patterned on the surface of a substrate. A thin thermally grown oxide layer is then formed over the entire array. The source/drain regions are then implanted through the thin silicon dioxide layer into the substrate. Next a thick silicon dioxide layer is deposited by chemical vapor deposition on the surface of the array. The surface of the array is then coated with photoresist which, because of its nature, provides a planarized surface on the top layer of photoresist. The photoresist and the silicon dioxide layer are then etched using an etching process which provides an etching ratio of 1 to 1 between photoresist and silicon dioxide. The photoresist is completely etched away thus leaving the planarized silicon dioxide surface. The silicon dioxide layer is then further etched so that the top surfaces of the floating gates are exposed. An interlevel insulator layer is then formed on the surface of the array and the active gates are then formed on the surface of the interlevel insulator. In another embodiment of the present invention, a step for forming refractory metal silicide regions on the bitlines of the array is included. The use of silicided bitlines in this type of array is precluded in the prior art because thick field oxide regions must be thermally grown over the silicided regions using the prior art techniques. The growth of silicon dioxide over silicided regions is very difficult if not impossible.
Inventors
👤 Allan T. Mitchell
👤 James L. Paterson
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-28 15:08
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
149 words
A process for forming a nonvolatile memory comprising the steps of: providing a semiconductor substrate; forming conductive strips on the surface of but insulated from said substrate; forming source/drain regions in said substrate between said conductive strips; depositing a conformal layer of insulating material on the surface of said substrate and said conductive strips; planarizing said layer of insulating material to a point where the top surface of said layer of insulating material is substantially even with the top surface of said conductive strips; forming a layer of conductive material on the surface of said conformal layer and on the surface of but insulated from said conductive strips; and etching said layer of conductive material and said conductive strips to form word lines from said layer of conductive material running perpendicular to said conductive strips and to form floating gates from said conductive strips disposed beneath said word lines.
Claim 2
Dependent Claim
149 words
A process for forming a nonvolatile memory comprising the steps of: providing a semiconductor substrate; forming conductive strips on the surface of but insulated from said substrate; forming source/drain regions in said substrate between said conductive strips; depositing a conformal layer of insulating material on the surface of said substrate and said conductive strips; planarizing said layer of insulating material to a point where the top surface of said layer of insulating material is substantially even with the top surface of said conductive strips; forming a layer of conductive material on the surface of said conformal layer and on the surface of but insulated from said conductive strips; and etching said layer of conductive material and said conductive strips to form word lines from said layer of conductive material running perpendicular to said conductive strips and to form floating gates from said conductive strips disposed beneath said word lines.
Claim 3
Dependent Claim
17 words
A process for forming a nonvolatile memory as in claim 1 wherein said substrate comprises crystalline silicon.
Claim 4
Dependent Claim
18 words
A process for forming a nonvolatile memory as in claim 1 wherein said conductive strips comprise polycrystalline silicon.
Claim 5
Dependent Claim
18 words
A process for forming a nonvolatile memory as in claim 1 wherein said insulator layer comprises silicon dioxide.
Claim 6
Dependent Claim
21 words
A process for forming a nonvolatile memory as in claim 4 wherein said insulator layer is deposited by chemical vapor deposition.
Claim 7
Dependent Claim
20 words
A process for forming a nonvolatile memory as in claim 1 wherein said layer of conductive material comprises polycrystalline silicon.
Claim 8
Dependent Claim
179 words
A process for forming a nonvolatile memory comprising the steps of: providing a semiconductor substrate; forming conductive strips on the surface of but insulated from said substrate; forming source/drain regions in said substrate between said conductive strips; depositing a conformal layer of insulating material on the surface of said substrate and said conductive strips; planarizing said layer of insulating material to a point where the top surface of said layer of insulating material is substantially even with the top surface of said conductive strips; forming thin conductive strips on the surface of said conductive strips, said thin conductive strips being wider than said conductive strips; forming a layer of conductive material on the surface of said conformal layer and on the surface of but insulated from said thin conductive strips; etching said layer of conductive material, said thin conductive strips and said conductive strips to form word lines from said layer of conductive material running perpendicular to said conductive strips and to form floating gates from said conductive strips and said thin conductive strips disposed beneath said word lines.
Claim 9
Dependent Claim
179 words
A process for forming a nonvolatile memory comprising the steps of: providing a semiconductor substrate; forming conductive strips on the surface of but insulated from said substrate; forming source/drain regions in said substrate between said conductive strips; depositing a conformal layer of insulating material on the surface of said substrate and said conductive strips; planarizing said layer of insulating material to a point where the top surface of said layer of insulating material is substantially even with the top surface of said conductive strips; forming thin conductive strips on the surface of said conductive strips, said thin conductive strips being wider than said conductive strips; forming a layer of conductive material on the surface of said conformal layer and on the surface of but insulated from said thin conductive strips; etching said layer of conductive material, said thin conductive strips and said conductive strips to form word lines from said layer of conductive material running perpendicular to said conductive strips and to form floating gates from said conductive strips and said thin conductive strips disposed beneath said word lines.