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US4704300A
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Method for producing silicon nitride layer
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1985-03-11
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Granted: 1987-11-03
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Expires: 2005-03-11
Abstract
Abstract A silicon nitride layer is formed on a substrate by reacting (1) a silicon fluoride, (2) nitrogen or nitrogen hydride and (3) a nitrogen fluoride by a plasma chemical vapor deposition (thermal energy and electronic energy are applied) process. According to the invention, fluorine is added in the silicon nitride layer to produce a Si-F coupling and thus it is made possible to reduce a concentration of hydrogen in the silicon nitride film. It is also possible to make a concentration of oxygen in the silicon nitride layer less than 1/10 of that of the conventional silicon nitride.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
61 words
A method for producing a silicon nitride layer, wherein the layer is produced on a surface of a substrate while the substrate is heated by applying a thermal energy and an electric energy to a reaction gas mixture composed of a silicon fluoric hydride gas represented by H n SiF m (m=1, 2, 3; n=0 to 3) and hydrogen nitride gas.
Claim 2
Independent Claim
61 words
A method for producing a silicon nitride layer, wherein the layer is produced on a surface of a substrate while the substrate is heated by applying a thermal energy and an electric energy to a reaction gas mixture composed of a silicon fluoric hydride gas represented by H n SiF m (m=1, 2, 3; n=0 to 3) and hydrogen nitride gas.
Claim 3
Dependent Claim
26 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein the reaction gas mixture contains SiF 2 , ammonia or hydrazine.
Claim 4
Dependent Claim
26 words
A method for producing a silicon nitride layer as set forth in claim 1, wherein the silicon fluoric hydride gas is Si 2 F 6 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-02 | 1991-05-04 | 1991-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-02 | 1995-05-04 | 1995-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-02 | 1999-05-04 | 1999-11-03 | $7700.00 | Window Closed / Lapsed |