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US4702936A
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Gas-phase growth process
Assignee: Applied Materials Japan Inc
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Filing: 1985-09-20
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Granted: 1987-10-27
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Expires: 2005-09-20
Abstract
Abstract A gas-phase growth process for forming a film of SiO 2 Si 3 N 4 or Si x O y N z , which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O 2 , N 2 O, NO 2 NO, CO 2 CO and NH 3 , with the proviso that the mixture of inorganic silane and O 2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500° C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Toshihiko Fukuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482; C23C16/22; C23C16/30; C23C16/308; C23C16/34; C23C16/345; C23C16/40; C23C16/401; C23C16/402; C30; C30B; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
122 words
A gas-phase growth process for forming a film of SiO 2 , Si 3 N 4 or Si x O y N z , which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O 2 , N 2 O, NO 2 , NO, CO 2 , CO, NH 3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500° C. and subjecting the surface of a substrate which is contained in said reaction chamber to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO 2 , Si 3 N 4 or Si x O y N z .
Claim 2
Dependent Claim
122 words
A gas-phase growth process for forming a film of SiO 2 , Si 3 N 4 or Si x O y N z , which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O 2 , N 2 O, NO 2 , NO, CO 2 , CO, NH 3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500° C. and subjecting the surface of a substrate which is contained in said reaction chamber to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO 2 , Si 3 N 4 or Si x O y N z .
Claim 3
Dependent Claim
141 words
A gas-phase growth process for forming a film of SiO 2 , Si 3 N 4 or Si x O y N z according to the pattern of a mask, which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O 2 , N 2 O, NO 2 , NO, CO 2 , CO, NH 3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500° C. and subjecting the surface of a substrate through a mask with a prescribed pattern, said mask being placed over said substrate, to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO 2 , Si 3 N 4 or Si x O y N z according to the pattern of said mask.
Claim 4
Dependent Claim
141 words
A gas-phase growth process for forming a film of SiO 2 , Si 3 N 4 or Si x O y N z according to the pattern of a mask, which comprises introducing a reaction mixture of an organic silane with a reaction gas selected from O 2 , N 2 O, NO 2 , NO, CO 2 , CO, NH 3 or a mixture thereof, into a reaction chamber kept at a reaction temperature below 500° C. and subjecting the surface of a substrate through a mask with a prescribed pattern, said mask being placed over said substrate, to UV irradiation to effect photo-excitation of said reaction mixture and to induce a surface reaction thereof, forming a film of SiO 2 , Si 3 N 4 or Si x O y N z according to the pattern of said mask.
Claim 5
Dependent Claim
18 words
The gas-phase growth process according to claim 1, wherein the organic silane is a liquid at ordinary temperatures.
Claim 6
Dependent Claim
18 words
The gas-phase growth process according to claim 2, wherein the organic silane is a liquid at ordinary temperatures.
Claim 7
Dependent Claim
13 words
The gas-phase growth process according to claim 1, wherein the organic silane tetraethoxysilane.
Claim 8
Dependent Claim
14 words
The gas-phase growth process according to claim 2, wherein the organic silane is tetraethoxysilane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-26 | 1991-04-27 | 1991-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-26 | 1995-04-27 | 1995-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-26 | 1999-04-27 | 1999-10-27 | $7700.00 | Window Closed / Lapsed |