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Patent US4683147A successfully refreshed from Google Patents.
US4683147A
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Method of forming deposition film
Assignee: Canon Inc
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Filing: 1985-04-12
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Granted: 1987-07-28
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Expires: 2005-04-12
Abstract
Abstract A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) SinHmXl (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) SiaX2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) SibX2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si cXdYe (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) SifYgYh (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) SiiHjXk (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.
Inventors
- 👤 Ken Eguchi
- 👤 Hiroshi Matsuda
- 👤 Masahiro Haruta
- 👤 Yukuo Nishimura
- 👤 Yutaka Hirai
- 👤 Takashi Nakagiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:38
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/44; C23C16/48; C23C16/482; C23C16/483; C23C16/488; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; B05D3/00; B05D3/06
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
339 words
A photolytic method of forming a silicon-containing film deposited on a substrate, comprising the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound sufficient to excite and decompose the compound and to deposit a film while maintaining a pressure of 0.01 to 100 Torr during the forming of said film, whereby the film may be deposited at a substrate temperature on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds: (A) Si n H m X l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1 respectively, m+l=2n if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si a X 2a+2 (wherein X is halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si b X 2b (wherein x is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si c X d Y e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si f X g Y h (wherein X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si i H j X k (wherein X is a halogen atom, i, j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.
Claim 2
Dependent Claim
339 words
A photolytic method of forming a silicon-containing film deposited on a substrate, comprising the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound sufficient to excite and decompose the compound and to deposit a film while maintaining a pressure of 0.01 to 100 Torr during the forming of said film, whereby the film may be deposited at a substrate temperature on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds: (A) Si n H m X l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1 respectively, m+l=2n if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si a X 2a+2 (wherein X is halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si b X 2b (wherein x is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si c X d Y e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si f X g Y h (wherein X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si i H j X k (wherein X is a halogen atom, i, j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.
Claim 3
Dependent Claim
71 words
A method according to claim 1, wherein the silicon compound comprises a cyclic silicon compound represented by general formula Si n H m X l (wherein X is a halogen atom, n is an integer of not less than 3, m and l are integers of not less than 1, and m+l=2n; if l is an integer of not less than 2, a plurality of X's may be different halogen atoms).
Claim 4
Dependent Claim
39 words
A method according to claim 1, wherein the silicon compound comprises a chain halogenated silicon compound represented by general formula Si a X 2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6).
Claim 5
Dependent Claim
39 words
A method according to claim 1, wherein the silicon compound comprises a cyclic halogenated silicon compound represented by general formula Si b X 2b (wherein X is a halogen atom and b is an integer of 3 to 6).
Claim 6
Dependent Claim
54 words
A method according to claim 1, wherein the silicon compound comprises a cyclic halogenated silicon compound represented by general formula Si c X d Y e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c).
Claim 7
Dependent Claim
55 words
A method according to claim 1, wherein the silicon compound comprises a chain halogenated silicon compound represented by general formula Si f X g Y h (wherein X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are respectively integers of not less than 1, and g+h=2f+2).
Claim 8
Dependent Claim
43 words
A method according to claim 1, wherein the silicon compound comprises a silicon compound represented by general formula Si i H j X k (wherein X is a halogen atom, i, j and k are integers of not less than 1, and j+k=2i+2).
Claim 9
Dependent Claim
14 words
A method according to claim 1, wherein hydrogen is further supplied to the chamber.
Claim 10
Dependent Claim
33 words
A method according to claim 1, wherein a compound containing an element selected from the group consisting of Groups III and V elements of the Periodic Table is further supplied to the chamber.
Claim 11
Dependent Claim
26 words
A method according to claim 9, wherein the Group III element is an element selected from the group consisting of B, Al, Ga, In and Tl.
Claim 12
Dependent Claim
26 words
A method according to claim 9, wherein the Group V element is an element selected from the group consisting of N, P, As, Sb and Bi.
Claim 13
Dependent Claim
29 words
A method according to claim 1, wherein the light energy is a member selected from the group consisting of ultraviolet rays, infrared rays, visible light rays, X-rays and gamma-rays.
Claim 14
Dependent Claim
40 words
A method according to claim 1, wherein said light energy generating means is a light source selected from the group consisting of a mercury lamp, a xenon lamp, a carbon dioxide laser, an argon ion laser and an excimer laser.
Claim 15
Dependent Claim
210 words
A method according to claim 2, wherein the silicon compound is a compound selected from the group consisting of: (1) H 6 Si 6 F 6 ; (2) H 6 Si 6 Cl 6 ; (3) H 6 Si 6 Br 6 ; (4) H 6 Si 6 I 6 ; (5) H 6 Si 6 F 4 Br 2 ; (6) H 6 Si 6 Cl 4 Br 2 ; (7) H 8 Si 6 F 4 ; (8) H 8 Si 6 Cl 4 ; (9) H 8 Si 6 Br 4 ; (10) H 8 Si 6 I 4 ; (11) H 5 Si 5 F 5 ; (12) H 5 Si 5 Cl 5 ; (13) H 5 Si 5 Br 5 ; (14) H 5 Si 5 I 5 ; (15) H 5 Si 5 F 3 Br 2 ; (16) H 5 Si 5 Cl 3 Br 2 ; (17) H 6 Si 5 F 4 ; (18) H 6 Si 5 Cl 4 ; (19) H 6 Si 5 Br 4 ; (20) H 6 Si 5 I 4 ; (21) H 4 SiF 4 ; (22) H 4 Si 4 Cl 4 ; and (23) H 4 Si 4 Br 4 .
Claim 16
Dependent Claim
90 words
A method according to claim 3, wherein the silicon compound is a compound selected from the group consisting of: (24) SiF 4 ; (25) Si 2 F 6 ; (26) Si 3 F 8 ; (27) Si 4 F 10 ; (28) Si 5 F 12 ; (29) Si 6 F 14 ; (30) SiCl 4 ; (31) Si 2 Cl 6 ; (32) Si 3 Cl 8 ; (33) SiBr 4 ; (34) Si 2 Br 6 ; (35) Si 3 Br 8 ; and (36) SiI 4 .
Claim 17
Dependent Claim
80 words
A method according to claim 4, wherein the silicon compound is a compound selected from the group consisting of: (37) Si 3 F 6 ; (38) Si 4 F 8 ; (39) Si 5 F 10 ; (40) Si 6 F 12 ; (41) Si 3 Cl 6 ; (42) Si 4 Cl 8 ; (43) Si 5 Cl 10 ; (44) Si 6 Cl 12 ; (45) Si 3 Br 6 ; and (46) Si 4 Br 8 .
Claim 18
Dependent Claim
254 words
A method according to claim 5, wherein the silicon compound is a compound selected from the group consisting of: (47) Si 3 F 5 Cl; (48) Si 3 F 4 Cl 2 ; (49) Si 3 F 3 Cl 3 ; (50) Si 3 F 2 Cl 4 ; (51) Si 3 FCl 5 ; (52) Si 4 F 7 Cl; (53) Si 4 F 6 Cl 2 ; (54) Si 4 F 5 Cl 3 ; (55) Si 4 F 4 Cl 4 ; (56) Si 4 F 3 Cl 5 ; (57) Si 4 F 2 Cl 6 ; (58) Si 4 FCl 7 ; (59) Si 3 F 5 Br; (60) Si 3 F 4 Br 2 ; (61) Si 3 F 3 Br 3 ; (62) Si 3 F 2 Br 4 ; (63) Si 3 FBr 5 ; (64) Si 4 F 7 Br; (65) Si 4 F 6 Br 2 ; (66) Si 4 F 5 Br 3 ; (67) Si 4 F 4 Br 4 ; (68) Si 4 F 3 Br 5 ; (69) Si 4 F 2 Br 6 ; (70) Si 4 FBr 7 ; (71) Si 3 Cl 5 Br; (72) Si 3 Cl 4 Br 2 ; (73) Si 3 Cl 3 Br 3 ; (74) Si 3 Cl 2 Br 4 ; (75) Si 3 ClBr 5 ; (76) Si 3 F 5 I; (77) Si 3 F 4 I 2 ; and (78) Si 3 F 3 I 3 .
Claim 19
Dependent Claim
152 words
A method according to claim 6, wherein the silicon compound is a compound selected from the group consisting of: (79) SiF 3 Cl; (80) SiF 2 Cl 2 ; (81) SiF 3 Cl; (82) Si 2 FCl 5 ; (83) Si 2 F 2 Cl 4 ; (84) Si 2 F 3 Cl 3 ; (85) Si 2 F 4 Cl 2 ; (86) Si 2 F 5 Cl; (87) Si 3 F 7 Cl; (88) Si 3 F 6 Cl 2 ; (89) Si 3 F 5 Cl 3 ; (90) SiF 3 Br; (91) SiF 2 Br 2 ; (92) SiFBr 3 ; (93) Si 2 F 5 Br; (94) Si 2 F 4 Br 2 ; (95) Si 2 F 3 Br 3 ; (96) SiCl 3 Br; (97) SiCl 2 Br 2 ; (98) SiClBr 3 ; (99) SiF 3 I; and (100) SiF 2 I 2 .
Claim 20
Dependent Claim
271 words
A method according to claim 1, wherein the silicon compound is at least one compound selected from the group consisting of: (101) H 2 SiBr 2 ; (102) H 2 SiI 2 ; (103) H 3 SiF; (104) H 3 SiBr; (105) H 3 SiI; (106) H 3 SiFI; (107) H 2 SiClI; (108) H 2 SiBrI; (109) (HBr 2 Si) 2 ; (110) (HI 2 Si) 2 ; (111) (H 2 FSi) 2 ; (112) (H 2 ClSi) 2 ; (113) (H 2 BrSi) 2 ; (114) (H 2 ISi) 2 ; (115) H 4 Si 2 FI; (116) H 4 Si 2 ClI; (117) H 4 Si 2 BrI; (118) H 4 Si 2 FBr; (119) H 4 Si 2 ClBr; (120) H 5 Si 2 F; (121) H 5 Si 2 Cl; (122) H 5 Si 2 Br; (123) H 5 Si 2 I; ##STR7## (126) H 5 Si 3 Br 3 ; (127) H 5 Si 3 I 3 ; (128) H 4 Si 3 Br 4 ; (129) H 4 Si 3 I 4 ; (130) H 6 Si 3 Br 2 ; (131) H 6 Si 3 I 2 ; (132) H 7 Si 3 F; (133) H 7 Si 3 Cl; (134) H 7 Si 3 Br; (135) H 7 Si 3 I; (136) cyc-H 2 Si 6 Br 10 ; (137) cyc-H 6 Si 6 Br 6 ; (138) cyc-H 2 Si 6 F 4 Br 6 ; (139) cyc-H 6 Si 6 Cl 6 ; (140) cyc-H 6 Si 6 F 6 ; and (141) cyc-H 2 Si 6 F 10 .
Claim 21
Dependent Claim
22 words
A method according to claim 1 including maintaining the substrate at a temperature from about 50° to 150° C. during film formation.
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