Thin film chromium-silicon-carbon resistor

Claim 2

An improved thin film chromium-silicon-carbon resistor material comprising from about 25 to 35 wt. % chromium, about 40 to 55 wt. % silicon, and about 20 to 30 wt. % carbon and characterized by a resistivity of from greater than about 800 ohms per square to less than about 1200 ohms per square, a temperature coefficient of resistance of less than 200 ppm per degree Centigrade, and lifetime absolute and matching stability of less than 0.1% change in resistivity.

Claim 3

The thin film resistor material of claim 1 wherein the chromium content comprises from about 27 to 33 wt. %, the silicon content comprises from about 44 to 50 wt. %, and the carbon content comprises from about 21 to 26 wt. %.

Claim 4

The thin film resistor material of claim 2 wherein the chromium content comprises from about 28 to 31 wt. %, the silicon content comprises from about 46 to 48 wt. %, and the carbon content comprises from about 23 to 24 wt. %.

Claim 5

The thin film resistor material of claim 3 wherein said material comprises 31 wt. % chromium, 46 wt. % silicon, and 23 wt. % carbon.

Claim 6

The thin film resistor material of claim 1 wherein the material is further characterized by a temperature coefficient of expansion substantially matching silicon dioxide.

Claim 7

The thin film resistor material of claim 1 further characterized by an annealability at temperatures below 500° C. to avoid damage to any aluminum which may be already present in an integrated circuit structure to which said resistor material is applied.

Claim 8

The thin film resistor material of claim 6 which is further characterized by a resistance value which does not substantially change during subsequent processing at temperatures below the annealing temperature.

Claim 9

The thin film resistor material of claim 1 which is further characterized as a material which may be applied to a substrate by sputtering at a gas pressure of 2.0×10 -7 Torr and at a voltage range of from 1000 to 1400 volts.

Claim 10

The thin film resistor material of claim 1 which is further characterized by a uniformity of film resistance on a substrate of less than about 14% difference in resistivity.

Claim 11

An improved integrated circuit structure comprising a silicon oxide material having formed thereon one or more improved thin film chromium-silicon-carbon resistors comprising from about 25 to 35 wt. % chromium, about 40 to 55 wt. % silicon and about 20 to 30 wt. % carbon which is applicable to said structure by sputtering at a gas pressure of 2.0×10 -7 Torr or less and at a voltage range of from 1000-1400 volts and which is annealable at a temperature of less than 500° C. to provide a resistance film which will not substantially change in resistance value during subsequent exposure during processing to temperatures lower than the annealing temperature;, said resistor film being further characterized by a resistivity of from greater than about 800 ohms per square to less than about 1200 ohms per square, a uniformity across the resistor film of not more than 14% difference in resistivity, a temperature coefficient of resistance of less than 200 ppm per degree Centigrade, and lifetime absolute and matching stability of less than 0.1% change in resistivity and a temperature coefficient of expansion substantially matching that of the underlying silicon oxide.

Claim 12

An improved integrated circuit structure comprising a silicon oxide material having formed thereon one or more improved thin film chromium-silicon-carbon resistors comprising from about 25 to 35 wt. % chromium, about 40 to 55 wt. % silicon and about 20 to 30 wt. % carbon which is applicable to said structure by sputtering at a gas pressure of 2.0×10 -7 Torr or less and at a voltage range of from 1000-1400 volts and which is annealable at a temperature of less than 500° C. to provide a resistance film which will not substantially change in resistance value during subsequent exposure during processing to temperatures lower than the annealing temperature;, said resistor film being further characterized by a resistivity of from greater than about 800 ohms per square to less than about 1200 ohms per square, a uniformity across the resistor film of not more than 14% difference in resistivity, a temperature coefficient of resistance of less than 200 ppm per degree Centigrade, and lifetime absolute and matching stability of less than 0.1% change in resistivity and a temperature coefficient of expansion substantially matching that of the underlying silicon oxide.