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US4569742A Expired / Lapsed US ⏱️ 0.0 years remaining

Reactively sputtered chrome silicon nitride resistors

Assignee: Honeywell Inc
•
Filing: 1984-05-31
•
Granted: 1986-02-11
•
Expires: 2004-05-31
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Abstract

Abstract Radio frequency sputtering of silicon and chromium alloy targets in a nitrogen and argon atmosphere while applying an electrical bias to the substrate produces an electrically resitive thin film on said substrate.

Inventors

  • 👤 James A. Schuetz

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 23:38
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 65 words
A method of producing an electrically resistive thin film on a substrate, said method comprising: placing said substrate and a sputtering target comprising silicon and chromium in a reaction chamber; evacuating said reaction chamber; providing a sputtering atmosphere comprising nitrogen and argon in said reaction chamber; applying an electrical bias voltage to said substrate; and providing a radio frequency electrical discharge in said reaction chamber.
Claim 2
Independent Claim 65 words
A method of producing an electrically resistive thin film on a substrate, said method comprising: placing said substrate and a sputtering target comprising silicon and chromium in a reaction chamber; evacuating said reaction chamber; providing a sputtering atmosphere comprising nitrogen and argon in said reaction chamber; applying an electrical bias voltage to said substrate; and providing a radio frequency electrical discharge in said reaction chamber.
Claim 3
Dependent Claim 16 words
The method of claim 1 wherein said electrical bias voltage is a radio frequency bias voltage.
Claim 4
Dependent Claim 19 words
The method of claim 1 wherein said electrical bias voltage is in a range of 40 to 60 volts.
Claim 5
Dependent Claim 21 words
The method of claim 1 wherein said nitrogen is provided to said reaction chamber at a rate greater than 1.0 sccm.
Claim 6
Dependent Claim 21 words
The method of claim 2 wherein said nitrogen is provided to said reaction chamber at a rate greater than 1.0 sccm.
Claim 7
Dependent Claim 20 words
The method of claim 5 wherein said sputtering target comprises chromium in a range of 27 to 45 atomic percent.
Claim 8
Dependent Claim 19 words
The method of claim 6 wherein said electrical bias voltage is in a range of 40 to 60 volts.
Claim 9
Dependent Claim 31 words
The method of claim 1 wherein said sputtering atmosphere exerts a pressure in a range of 4×10 -3 to 5×10 -3 torr while said radio frequency electrical discharge is being provided.
Claim 10
Dependent Claim 19 words
The method of claim 8 wherein said electrical bias voltage is in a range of 40 to 60 volts.
Claim 11
Dependent Claim 16 words
The method of claim 9 wherein said electrical bias voltage is a radio frequency bias voltage.
Claim 12
Dependent Claim 25 words
The method of claim 1 wherein gas pressure in said reaction chamber is reduced to no greater than 2×10 -7 torr during said evacuation step.
Claim 13
Dependent Claim 31 words
The method of claim 11 wherein said sputtering atmosphere exerts a pressure in a range of 4×10 -3 to 5×10 -3 torr while said radio frequency electrical discharge is being provided.
Claim 14
Dependent Claim 16 words
The method of claim 12 wherein said electrical bias voltage is a radio frequency bias voltage.

References Cited (Backward Citations)

US3477935A Cited
US4392992A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-02-10 1989-08-12 1990-02-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-02-10 1993-08-12 1994-02-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-02-10 1997-08-12 1998-02-11 $7700.00 Window Closed / Lapsed

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