US4680854A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming low resistivity hillock free conductors in VLSI devices
Assignee: STMicroelectronics NV
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Filing: 1985-12-24
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Granted: 1987-07-21
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Expires: 2005-12-24
Abstract
Abstract Particularly for use in MOS (metal-oxide-semiconductor) VLSI (very large scale integrated) circuits, an aluminum conductor coated with a layer of refractory metal or refractory metal silicide has the advantages of being resistant both to electromigration and to hillock growth. By this invention, to reduce the resistivity of this composite conductor and to eliminate hillock formation, the conductor is subjected to an ion implantation step to cause interface mixing between the aluminum and the adjacent refractory metal or refractory metal silicide.
Inventors
- 👤 Vu Q. Ho
- 👤 Heinz J. Nentwich
- 👤 Hussein M. Naquib
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; Y; Y10; Y10S; Y10S148/00; Y10S148/14; Y10S438/00; Y10S438/927; Y10S438/937
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
55 words
In a method of semiconductor processing, fabricating a conductor by: depositing on a semiconductor wafer a first layer of aluminum or an aluminum-rich alloy; depositing on the aluminum a second layer of refractory metal or refractory metal silicide; and causing interface mixing at an interface between the two layers by implanting ions at said interface.
Claim 2
Dependent Claim
55 words
In a method of semiconductor processing, fabricating a conductor by: depositing on a semiconductor wafer a first layer of aluminum or an aluminum-rich alloy; depositing on the aluminum a second layer of refractory metal or refractory metal silicide; and causing interface mixing at an interface between the two layers by implanting ions at said interface.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1 in which the first layer comprises an alloy of aluminum.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 1 in which the implanted ions are ions of one of the group of elements consisting of arsenic, phosphorus and boron difluoride.
Claim 5
Dependent Claim
29 words
A method as claimed in claim 1 in which the implanted ions are inert ions of one of the group of elements consisting of argon, xenon, krypton and germanium.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 1 further comprising annealing to repair implantation damage.
Claim 7
Independent Claim
80 words
A method of producing a low resistivity hillock free conductor in a VLSI device, comprising: depositing a first layer of a material including aluminum on a conductor wafer; suppressing the formation of hillocks in said aluminum by depositing a second layer of material including a refractory metal on said first layer; and causing an interface mixing at an interface between the first and second layers in order to reduce the resistivity of the conductor by implanting ions at said interface.
Claim 8
Independent Claim
80 words
A method of producing a low resistivity hillock free conductor in a VLSI device, comprising: depositing a first layer of a material including aluminum on a conductor wafer; suppressing the formation of hillocks in said aluminum by depositing a second layer of material including a refractory metal on said first layer; and causing an interface mixing at an interface between the first and second layers in order to reduce the resistivity of the conductor by implanting ions at said interface.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-20 | 1991-01-19 | 1991-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-20 | 1995-01-19 | 1995-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-20 | 1999-01-19 | 1999-07-21 | $7700.00 | Window Closed / Lapsed |