US4482394A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion
Assignee: ITT Inc
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Filing: 1982-09-08
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Granted: 1984-11-13
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Expires: 2002-09-08
Abstract
Abstract Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300 DEG to 500 DEG C. at which simultaneous annealing and diffusion take place to form the alloy. An apparatus for performing the process comprises a vacuum chamber wherein implantation is effected, an ion gun and means including a deflection magnet slit for selecting a single ionic species for implantation.
Inventors
- 👤 Rudolf A. H. Heinecke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:55
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P32/00; H10P32/30
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
79 words
A method of alloying a metal surface film on a body including implanting said film with ions of one or more alloying materials, by generating ions at a controlled rate in an ion beam, deflecting each ion in the beam by an angle corresponding to charge/mass ratio of the ions, and transmitting only ions of a predetermined charge/mass ratio to the metal surface, and in which the body is subsequently processed at one of a plurality of known temperatures.
Claim 2
Independent Claim
79 words
A method of alloying a metal surface film on a body including implanting said film with ions of one or more alloying materials, by generating ions at a controlled rate in an ion beam, deflecting each ion in the beam by an angle corresponding to charge/mass ratio of the ions, and transmitting only ions of a predetermined charge/mass ratio to the metal surface, and in which the body is subsequently processed at one of a plurality of known temperatures.
Claim 3
Dependent Claim
27 words
A method as claimed in claim 1, in which the rate of generation of ions is determined as a function of temperature of processing of the body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-13 | 1988-05-14 | 1988-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-13 | 1992-05-14 | 1992-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-13 | 1996-05-14 | 1996-11-13 | $7700.00 | Window Closed / Lapsed |