US4680698A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High density ROM in separate isolation well on single with chip
Assignee: STMicroelectronics Ltd Great Britain
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Filing: 1983-11-16
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Granted: 1987-07-14
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Expires: 2003-11-16
Abstract
Abstract A programmable, high speed, single chip microcomputer includes 4K of RAM, ROM, registers and an ALU. Program can be stored in the on-chip RAM. The first local variable of each process to be executed is a workspace pointer (WPTR), and each process has a respective workspace identified by its WPTR. For each process, addressing of other variables is relative to the current WPTR, which is stored in a workpiece pointer register (WPTR REG). Instructions are constant bit size, having a function portion and a data portion loaded, respectively, into an instruction buffer (IB) and an operand register (OREGTR). Memory address locations are formed by combining the contents of the workspace pointer register and the operand register, or the contents of the A Register and the operand register. A set of "direct functions" obtains data from OREG. "Indirect functions" use the OREG contents to identify other functions, obtaining data from registers other than the operand register. A "prefixing" function (PFIX) develops operands having long bit lengths. Scheduling and descheduling of processes are achieved by forming a linked list within the several workspaces for the active processes. Each workspace identifies the workspace pointer of the next process to be executed. Each workspace contains in memory the identification of the next instruction to be executed for that respective process. A "last pointer" register (LPTR REG.) cooperates in the scheduling operations. Each microcomputer chip can be coupled serially to other such chips on a respective pair of only two wires, each a unidirectional channel. Each channel also has two registers, one for process identification and one for data. Communications are synchronized.
Inventors
- 👤 Jonathan Edwards
- 👤 David L. Waller
- 👤 Michael D. May
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:05
CPC Classifications
G; G06; G06F; G06F9/00; G06F9/06; G06F9/46; G06F9/48; G06F9/4806; G06F9/4843; G06F9/4881; G06F15/00; G06F15/76; G06F15/78; G06F15/7839; G06F15/7842; G06F15/786; G06F15/80; G06F15/8007; G06F15/8023; G06F9/30; G06F9/30145; G06F9/3016; G06F9/30167; G06F9/30181; G06F9/30192; G06F9/54; G11; G11C; G11C29/00; G11C29/70
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
251 words
A network of interconnected microcomputers, each microcomputer comprising: (a) a single integrated circuit chip having a substrate of semiconductor material of a first type, (b) an on-chip high density RAM array having at least one K byte for holding a program containing instructions for execution by said on-chip processor, (c) a plurality of communication links each forming an interconnection with an adjacent microcomputer in the network, (d) an instruction pointer circuit for addressing said RAM to obtain program instructions therefrom, (e) an instruction receiving circuit coupled to said RAM for receiving said instructions from said program stored in said RAM, (f) an instruction decoder circuit coupled to said receiving circuit for decoding instructions received by said instruction receiving circuit, (g) a plurality of on-chip transistors comprising circuitry operable independently of the operation of said RAM, (h) first isolation well means formed in said substrate of a semiconductor material of different type than said substrate, said first isolation well means containing all of said memory cells of said high density RAM array, and (i) second isolation well means separate from said first isolation well means and formed in said substrate of a semiconductor material of different type than said substrate, said second isolation well means containing some of said transistors which are operable independently of said operation of said RAM, whereby each microcomputer in the network operates in accordance with instructions from program in its on-chip RAM and each on-chip RAM is protected from noise due to operation of independently operating transistors.
Claim 2
Dependent Claim
251 words
A network of interconnected microcomputers, each microcomputer comprising: (a) a single integrated circuit chip having a substrate of semiconductor material of a first type, (b) an on-chip high density RAM array having at least one K byte for holding a program containing instructions for execution by said on-chip processor, (c) a plurality of communication links each forming an interconnection with an adjacent microcomputer in the network, (d) an instruction pointer circuit for addressing said RAM to obtain program instructions therefrom, (e) an instruction receiving circuit coupled to said RAM for receiving said instructions from said program stored in said RAM, (f) an instruction decoder circuit coupled to said receiving circuit for decoding instructions received by said instruction receiving circuit, (g) a plurality of on-chip transistors comprising circuitry operable independently of the operation of said RAM, (h) first isolation well means formed in said substrate of a semiconductor material of different type than said substrate, said first isolation well means containing all of said memory cells of said high density RAM array, and (i) second isolation well means separate from said first isolation well means and formed in said substrate of a semiconductor material of different type than said substrate, said second isolation well means containing some of said transistors which are operable independently of said operation of said RAM, whereby each microcomputer in the network operates in accordance with instructions from program in its on-chip RAM and each on-chip RAM is protected from noise due to operation of independently operating transistors.
Claim 3
Dependent Claim
236 words
A microcomputer comprising an on-chip processor and on-chip memory on a single integrated circuit chip having a substrate of semiconductor material of a first type, wherein said on-chip memory comprises a high density RAM array having at least 1K bytes for holding a program containing instructions for execution by said on-chip processor, said microcomputer including: (a) an instruction pointer circuit for addressing said RAM to obtain program instructions therefrom, (b) an instruction receiving circuit coupled to said RAM for receiving said instructions from said program stored in said RAM, (c) an instruction decoder circuit coupled to said instruction receiving circuit for decoding instructions received by said instruction receiving circuit, (d) a plurality of on-chip transistors comprising circuitry operable independently of the operation of said RAM, (e) first isolation well means formed in said substrate of a semiconductor material of different type than said substrate, said first isolation well means containing all of said memory cells of said high density RAM array, and (f) second isolation well means separate from said first isolation well means and formed in said substrate of a semiconductor material of different type than said substrate, said second isolation well means containing some of said transistors which are operable independently of said operation of said RAM, whereby said high density RAM is located on the same chip as independently operating transistors and is protected from noise due to independent operation of said transistors.
Claim 4
Dependent Claim
236 words
A microcomputer comprising an on-chip processor and on-chip memory on a single integrated circuit chip having a substrate of semiconductor material of a first type, wherein said on-chip memory comprises a high density RAM array having at least 1K bytes for holding a program containing instructions for execution by said on-chip processor, said microcomputer including: (a) an instruction pointer circuit for addressing said RAM to obtain program instructions therefrom, (b) an instruction receiving circuit coupled to said RAM for receiving said instructions from said program stored in said RAM, (c) an instruction decoder circuit coupled to said instruction receiving circuit for decoding instructions received by said instruction receiving circuit, (d) a plurality of on-chip transistors comprising circuitry operable independently of the operation of said RAM, (e) first isolation well means formed in said substrate of a semiconductor material of different type than said substrate, said first isolation well means containing all of said memory cells of said high density RAM array, and (f) second isolation well means separate from said first isolation well means and formed in said substrate of a semiconductor material of different type than said substrate, said second isolation well means containing some of said transistors which are operable independently of said operation of said RAM, whereby said high density RAM is located on the same chip as independently operating transistors and is protected from noise due to independent operation of said transistors.
Claim 5
Dependent Claim
17 words
A microcomputer according to claim 2 wherein said memory provides at least four K bytes of RAM.
Claim 6
Dependent Claim
23 words
A microcomputer according to claim 3 wherein said memory comprises a plurality of RAM cells formed with high impedance resistive loads and transistors.
Claim 7
Dependent Claim
19 words
A microcomputer according to claim 4 on which said resistive loads are formed in a film of polycrystalline silicon.
Claim 8
Dependent Claim
23 words
A microcomputer according to claim 2 comprising a CMOS structure having an n-type substrate with one or more isolation wells of p-type semiconductor.
Claim 9
Dependent Claim
21 words
A microcomputer according to claim 6 in which said memory cells include n-channel transistors located within said p-type well or wells.
Claim 10
Dependent Claim
44 words
A microcomputer according to claim 2 having a substrate of low resistivity p-type semiconductor on which a high resistivity p-type epitaxial layer is located, said memory cells being located within said epitaxial layer and surrounded by an n-type region to isolate the memory cells.
Claim 11
Dependent Claim
40 words
A microcomputer according to claim 2 in which said memory array comprises a main memory array and a redundant memory array, together with means for enabling use of redundant memory if defective memory elements occur in said main memory array.
Claim 12
Dependent Claim
29 words
A microcomputer according to claim 9 in which said redundant memory array incorporates redundant rows and columns of memory elements interconnectable with said main memory array through fuse elements.
Claim 13
Dependent Claim
42 words
A microcomputer according to claim 2 comprising a single silicon chip on which is located said processor and further comprising communication channels, said programmable RAM together with said communication channels permitting message transmission to or from a process executed by said processor.
Claim 14
Dependent Claim
21 words
A microcomputer according to claim 11 wherein said communication channels include communication links permitting process to process communication with other microcomputers.
Claim 15
Dependent Claim
42 words
A microcomputer according to claim 12 further comprising control means for said processor responsive to functions selected from a function set which include data transfer between registers, between memory and registers, and which enable synchronization of message transfer through said communication channels.
Claim 16
Dependent Claim
50 words
A microcomputer according to claim 2 wherein said processor executes a sequence of instructions each one byte long and each having the same format of bit positions, thereby reducing the chip area required by the processor, said registers each having a bit length which is an integral number of bytes.
Claim 17
Dependent Claim
24 words
A microcomputer according to claim 2 in which said program is recorded in said memory on the same integrated circuit chip as the processor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-13 | 1991-01-12 | 1991-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-13 | 1995-01-12 | 1995-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-13 | 1999-01-12 | 1999-07-14 | $7700.00 | Window Closed / Lapsed |