Buffer circuit having a P-channel output mosfet with an open drain terminal connected to an external load

Claim 2

A semiconductor integrated device, having a semiconductor substrate and operatively connected to an external device, for driving the external device, comprising: an N-MOS internal semiconductor integrated circuit, having a final output stage including a load element and an N-MOS driver transistor, said load element and said N-MOS driver transistor formed on the semiconductor substrate and operatively connected in series between a voltage power supply and ground, for generating an output; a P-MOS output transistor formed on the semiconductor substrate, said P-MOS output transistor having a source operatively connected to the voltage power supply, having a gate, operatively connected to a connecting point between said load element and said N-MOS driver element, for receiving said output of said internal semiconductor integrated circuit, and having a drain, said drain having a voltage tolerance higher than that of said source; and an output terminal operatively connected to said drain of said P-MOS output transistor, said output terminal being operatively connected to the external device which is driven by said P-MOS output transistor.

Claim 3

A semiconductor integrated device as set forth in claim 1, wherein the semiconductor substrate is P conductivity type and comprises an N-type well formed in the P-type semiconductor substrate, said P-MOS output transistor being formed on said N-type well.

Claim 4

A semiconductor integrated device having a semiconductor substrate and operatively connected to an external device to be driven, comprising: an N-MOS internal semiconductor integrated circuit, having a final output stage including a load element and having a driver element of a first conductivity type, said load element and said driver element formed on the semiconductor substrate and operatively connected in series between a voltage power supply and ground, for generating an output; a transistor of a second conductivity type, opposite that of the first conductivity type, formed on the semiconductor substrate, said transistor having a source operatively connected to the voltage power supply, having a gate, operatively connected to a connecting point between said load element and said driver element, for receiving said output from said internal semiconductor integrated circuit and having a drain, said drain having a voltage tolerance higher than that of said source; and an output terminal operatively connected to said drain of said transistor and to the external device to be driven.

Claim 5

A semiconductor integrated device having a semiconductor substrate and operatively connected to an external device to be driven, comprising: an N-MOS internal semiconductor integrated circuit, having a final output stage including a load element and having a driver element of a first conductivity type, said load element and said driver element formed on the semiconductor substrate and operatively connected in series between a voltage power supply and ground, for generating an output; a transistor of a second conductivity type, opposite that of the first conductivity type, formed on the semiconductor substrate, said transistor having a source operatively connected to the voltage power supply, having a gate, operatively connected to a connecting point between said load element and said driver element, for receiving said output from said internal semiconductor integrated circuit and having a drain, said drain having a voltage tolerance higher than that of said source; and an output terminal operatively connected to said drain of said transistor and to the external device to be driven.

Claim 6

A semiconductor integrated device as set forth in claim 3, wherein said semiconductor substrate is of the second conductivity type and comprises a well of the first conductivity type formed in the semiconductor substrate, said transistor being formed on said well.

Claim 7

A semiconductor integrated device as set forth in claim 3, wherein said transistor comprises an offset region of the second conductivity type, formed beneath the surface of said well and between the region under said gate and drain of said transistor.

Claim 8

A semiconductor integrated device for driving an external high voltage device comprising: an internal semiconductor integrated circuit formed on a semiconductor substrate and including transistors, all of said transistors in said internal semiconductor substrate being N-MOS transistors, and including a final output stage which is an inverter having an output terminal, said inverter including: a first transistor being a load element having drain operatively connected to a power supply and having a source and a gate operatively connected to said output terminal of said inverter; and a second transistor being an enhancement-type N-MOS driving transistor, said enhancement-type N-MOS driving transistor having a source connected to ground, having a drain connected to said output terminal of said inverter, and having a gate operatively connected to receive a control signal; and a P-MOS open drain type output transistor formed on said semiconductor substrate having a source operatively connected to the power supply, having a drain operatively connected to the external high voltage device, and having a gate operatively connected to said output terminal of said inverter.

Claim 9

A semiconductor integrated device for driving an external high voltage device comprising: an internal semiconductor integrated circuit formed on a semiconductor substrate and including transistors, all of said transistors in said internal semiconductor substrate being N-MOS transistors, and including a final output stage which is an inverter having an output terminal, said inverter including: a first transistor being a load element having drain operatively connected to a power supply and having a source and a gate operatively connected to said output terminal of said inverter; and a second transistor being an enhancement-type N-MOS driving transistor, said enhancement-type N-MOS driving transistor having a source connected to ground, having a drain connected to said output terminal of said inverter, and having a gate operatively connected to receive a control signal; and a P-MOS open drain type output transistor formed on said semiconductor substrate having a source operatively connected to the power supply, having a drain operatively connected to the external high voltage device, and having a gate operatively connected to said output terminal of said inverter.