US3596347A
Expired / Lapsed
US
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Method of making insulated gate field effect transistors using ion implantation
Assignee: US Philips Corp
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Filing: 1968-08-19
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Granted: 1971-08-03
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Expires: 1988-08-19
Abstract
Abstract A method of making an insulated gate field transistor is described. Source and drain contact regions are first formed in a semiconductor, after which a metal ion mask is provided over the body to form metal contacts to the source and drain regions and a metal gate. Following this, ions are implanted in the semiconductor through an insulating layer covering the semiconductor so as to extend the source and drain regions to the edge of the metal gate which serves as a mask to define the desired channel length. Preferably the metal layer which provides the source and drain contacts and the gate is grounded to the ion-generating equipment to prevent charging of the insulating layer.
Inventors
- 👤 Julian Robert Anthony
- 👤 John Mar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:54
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
45 words
A method of making an insulated gate field effect transistor as set forth in claim 1 wherein the initially provided wider spaced source and drain regions are formed by diffusion of opposite-type-conductivity-forming impurities through holes in an insulating layer previously formed on the semiconductor surface.
Claim 2
Dependent Claim
39 words
A method of making an insulated gate field effect transistor as set forth in claim 2 wherein the previously formed insulating layer is removed and replaced by a fresh insulating layer prior to provision of the masking metal layer.
Claim 3
Dependent Claim
41 words
A method of making an insulated gate field effect transistor as set forth in claim 1 wherein the initially provided wider spaced source and drain regions are formed by ion implantation of opposite-type-conductivity-forming ions into limited areas of the semiconductor surface.
Claim 4
Dependent Claim
45 words
A method of making an insulated gate field effect transistor as set forth in claim 4 wherein the ion implantation step forming the wider spaced source and drain regions is carried out through holes in a metal mask on an insulating layer on the surface.
Claim 5
Dependent Claim
40 words
A method of making an insulated gate field effect transistor as set forth in claim 5 wherein during the ion implantation steps, the metal mask is connected to the apparatus generating the ions to prevent charging of the insulating layer.
Claim 6
Dependent Claim
33 words
A method of making an insulated gate field effect transistor as set forth in claim 5 wherein the initial ion implantation step is at a higher energy than the later ion implantation step.
Claim 7
Dependent Claim
64 words
A method of making an insulated gate field effect transistor as set forth in claim 1 wherein the metal mask covering the channel region and the metal layer contacting the source and drain regions constitute a single metal layer on the insulating layer, said single metal layer being grounded to the ion-generating equipment during the ion-implantation step to prevent charging of the insulating layer.
Claim 8
Dependent Claim
41 words
A method of making an insulated gate field effect transistor as set forth in claim 8 wherein selected portions of the single metal layer are removed following the ion-implantation step leaving separate source and drain contacts and a separate gate electrode.
Claim 9
Dependent Claim
32 words
A method of making an insulated gate field effect transistor as set forth in claim 9 wherein the semiconductor is silicon, the insulating layer comprises silicon oxide, and the metal is aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-02 | 1975-02-01 | 1975-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-02 | 1979-02-01 | 1979-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-02 | 1983-02-01 | 1983-08-03 | $7700.00 | Window Closed / Lapsed |