Method and apparatus for microwave heat-treatment of a semiconductor water

Claim 2

A heat-treating method which comprises causing a semiconductor wafer to float and to rotate at the same time in a gas within a chamber and irradiating the floating and rotating wafer with an electromagnetic wave in order to heat the wafer.

Claim 3

A heat-treating method according to claim 1, wherein the wafer is heated with microwaves while being rotated.

Claim 4

A heat-treating method according to claim 2, wherein a reaction substance is caused to react on the member during the heating of the member.

Claim 5

A heat-treating method according to claim 1, wherein the semiconductor wafer has a photoresist film deposited on its surface.

Claim 6

A heat-treating method according to claim 1, wherein a reaction substance is caused to react on the wafer during the heating of the wafer.

Claim 7

A heat-treating method according to claim 1, wherein an intensity of the electromagnetic wave is controlled on the basis of temperature measurement of the wafer.

Claim 8

A heat-treating apparatus that is comprising a processing chamber which heat-treats a semiconductor wafer, a holding means which floats the wafer with a gas that holds the wafer in a non-contacting state while the wafer is being moved vertically and being rotated, and an electromagnetic wave supplying means which projects and electromagnetic wave on the wafer to effect heating thereof.

Claim 9

A heat-treating apparatus that is comprising a processing chamber which heat-treats a semiconductor wafer, a holding means which floats the wafer with a gas that holds the wafer in a non-contacting state while the wafer is being moved vertically and being rotated, and an electromagnetic wave supplying means which projects and electromagnetic wave on the wafer to effect heating thereof.

Claim 10

A heat-treating apparatus according to claim 7, further comprising means for measuring the temperature of the floating wafer operatively associated with said electromagnetic wave supplying means and control means for controlling the intensity of the electromagnetic wave on the basis of the temperature measurement of the wafer by said measuring means.

Claim 11

A heat-treating apparatus according to claim 7, further comprising means for supplying gas to said chamber, said gas containing reaction gases that form a reaction product at predetermined temperatures; said electromagnetic wave supplying means comprising a microwave generator that projects microwaves onto said wafer to heat said wafer to said predetermined temperatures and a discharge means for discharging gas from said chamber after the reaction product has been formed on said wafer; the processing chamber and the holding means being made of material that is not inductively heated by said microwaves whereby the reaction product is selectively formed on said wafer and not on the walls of the chamber and on said holding means.

Claim 12

A heat-treating apparatus according to claim 9, wherein the means for supplying gas includes a first means for supplying an inert gas and a second means for supplying reaction gases to said chamber with the inert gas.

Claim 13

A heat-treating method which comprises passing streams of inert gas over surface portions of a semiconductor wafer within a chamber to cause the wafer to float while being moved vertically and being rotated in the gas; irradiating the floating wafer with microwaves to inductively heat the wafer to a constant temperature; admixing reaction gases with said inert gas and forming a film of a reaction product of the reaction gases on said surface portions of said semiconductor wafer.

Claim 14

A heat-treating method which comprises passing streams of inert gas over surface portions of a semiconductor wafer within a chamber to cause the wafer to float while being moved vertically and being rotated in the gas; irradiating the floating wafer with microwaves to inductively heat the wafer to a constant temperature; admixing reaction gases with said inert gas and forming a film of a reaction product of the reaction gases on said surface portions of said semiconductor wafer.

Claim 15

A heat-treating method according to claim 11, wherein walls of the chamber are made of a material which is not inductively heated by said microwaves, the temperature of said walls being maintained below said constant temperature whereby formation of said reaction product on said walls is prevented.

Claim 16

A heat-treating method according to claim 11, wherein said chamber includes a wafer-floating jig, a stream of said inert gas being passed into said jig to cause the wafer to float; said jig being made of a material which is transparent to the microwaves and which transmits the microwaves whereby the jig is not inductively heated to said constant temperature and projecting the microwaves through said jig onto said wafer, the reaction product being selectively formed on said wafer without being formed on said wafer-floating jig.

Claim 17

A heat-treating method which comprises passing a stream of gas containing reaction gases over surface portions of a semiconductor wafer within a chamber to cause the wafer to float while being moved vertically and being rotated in the gas; irradiating the floating wafer with microwaves to inductively heat the wafer to a constant temperature at which the reaction gases form a reaction product; and forming a film of the reaction product on a surface portion of said semiconductor wafer.

Claim 18

A heat-treating method which comprises passing a stream of gas containing reaction gases over surface portions of a semiconductor wafer within a chamber to cause the wafer to float while being moved vertically and being rotated in the gas; irradiating the floating wafer with microwaves to inductively heat the wafer to a constant temperature at which the reaction gases form a reaction product; and forming a film of the reaction product on a surface portion of said semiconductor wafer.

Claim 19

A heat-treating method according to claim 14, wherein walls of the chamber are made up of material which is not inductively heated by said microwaves, the temperature of said walls being maintained below the temperature at which the reaction product is formed.

Claim 20

A heat-treating apparatus according to claim 9, wherein the walls of said processing chamber are formed of a material which reflects the microwaves.

Claim 21

A heat-treating apparatus according to claim 9, wherein the walls of said processing chamber are formed of a material which is transparent to the microwaves and transmits the microwaves.