Patent US4664944A successfully refreshed from Google Patents.
US4664944A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition method for producing silicon carbide high-temperature semiconductors
Assignee: United States Department of Energy
•
Filing: 1986-01-31
•
Granted: 1987-05-12
•
Expires: 2006-01-31
Abstract
Abstract An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200°-1500° C. thereby depositing a layer of silicon carbide on the semiconductor substrate.
Inventors
- 👤 George C. Hsu
- 👤 Naresh K. Rohatgi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2904; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; C23C16/44; C23C16/442; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; Y; Y10; Y10S; Y10S148/00; Y10S148/148
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A deposition method for producing silicon carbide high-temperature semiconductors comprising the steps of: placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles, said fluidized bed comprising SiC, Si particles or mixtures thereof; introducing reactants selected from CH 3 SiCl 3 or a SiH 4 /C 3 H 8 mixture into said reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of said reactor; and heating said substrate at temperatures around 1200°-1500° C. thereby causing deposition of a layer of silicon carbide on said semiconductor substrate.
Claim 2
Dependent Claim
105 words
A deposition method for producing silicon carbide high-temperature semiconductors comprising the steps of: placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles, said fluidized bed comprising SiC, Si particles or mixtures thereof; introducing reactants selected from CH 3 SiCl 3 or a SiH 4 /C 3 H 8 mixture into said reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of said reactor; and heating said substrate at temperatures around 1200°-1500° C. thereby causing deposition of a layer of silicon carbide on said semiconductor substrate.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein said at least one SiC substrate is heated by an electric current.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein said bed particles range in size from 50-250 μm.
Claim 5
Dependent Claim
30 words
The method of claim 1, wherein said reactant comprises methyltrichlorosilane (CH 3 SiCl 3 ) and the concentration range of said CH 3 SiCl 3 in hydrogen is about 0.5-5%.
Claim 6
Dependent Claim
112 words
A deposition method for producing silicon carbide high-temperature semiconductors comprising the steps of: placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles, said at least one substrate is heated at a deposition temperature, while said bed particles are unheated; introducing reactants selected from CH 3 SiCl 3 or a SiH 4 /C 3 H 8 mixture into said reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of said reactor; and heating said substrate at temperatures around 1200°-1500° C. thereby causing deposition of a layer of silicon carbide on said semiconductor substrate.
Claim 7
Dependent Claim
112 words
A deposition method for producing silicon carbide high-temperature semiconductors comprising the steps of: placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles, said at least one substrate is heated at a deposition temperature, while said bed particles are unheated; introducing reactants selected from CH 3 SiCl 3 or a SiH 4 /C 3 H 8 mixture into said reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of said reactor; and heating said substrate at temperatures around 1200°-1500° C. thereby causing deposition of a layer of silicon carbide on said semiconductor substrate.
Claim 8
Dependent Claim
18 words
The method of claim 5, wherein said at least one SiC substrate is heated by an electric current.
Claim 9
Dependent Claim
15 words
The method of claim 5, wherein said bed particles range in size from 50-250 μm.
Claim 10
Dependent Claim
30 words
The method of claim 5, wherein said reactant comprises methyltrichlorosilane (CH 3 SiCl 3 ) and the concentration range of said CH 3 SiCl 3 in hydrogen is about 0.5-5%.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |