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US4424199A Expired / Lapsed US ⏱️ 0.0 years remaining

Fluid jet seed particle generator for silane pyrolysis reactor

Assignee: Advanced Silicon Materials LLC
•
Filing: 1981-12-11
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Granted: 1984-01-03
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Expires: 2001-12-11
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Abstract

Abstract Method is provided for generating fine sized seed particles of silicon for use in the fluidized bed pyrolysis of silane.

Inventors

  • 👤 Sridhar K. Iya

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 08:22
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/029; C23; C23C; C23C16/00; C23C16/44; C23C16/442; Y; Y10; Y10S; Y10S423/00; Y10S423/09; Y10S423/16

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 276 words
In a process for the production of high purity, polycrystalline silicon in a fluidized bed reaction zone by introducing a gas flow of silane or silane-hydrogen mixture into a fluidized bed of fine sized silicon particles suspended in a reaction zone by an upward flow of fluidizing gas, said reaction zone temperature being maintained within the decomposition temperature range of said silane and below the melting point temperature of silicon whereby said silane is decomposed to form silicon which deposits on the silicon particles in the fluidized bed to enlarge the same and cause said enlarged particles to descend as silicon product particles from said fluidized bed reaction zone through said upward flow of fluidizing gas into a collecting chamber having interior surfaces including side walls and a base portion having passages through which an upward flow of gas is introduced which passes into said fluidized bed reaction zone, the improvement which comprises providing in said collecting chamber, in addition to said upward flow of gas, a separate high velocity jet of gas above said base portion at a velocity which is in the range of about 100 to 1200 feet per second and which is from about 50 to 5000 times the velocity of said upward flow of gas said high velocity jet causing turbulence only in a portion of said collecting chamber so as to cause a portion of the enlarged silicon product particles in said chamber to impinge upon each other and be thereby comminuted to form smaller silicon particles which are transported upwardly into said fluidized bed in said reaction zone by said upward flow of gas passing through said perforated base.
Claim 2
Dependent Claim 276 words
In a process for the production of high purity, polycrystalline silicon in a fluidized bed reaction zone by introducing a gas flow of silane or silane-hydrogen mixture into a fluidized bed of fine sized silicon particles suspended in a reaction zone by an upward flow of fluidizing gas, said reaction zone temperature being maintained within the decomposition temperature range of said silane and below the melting point temperature of silicon whereby said silane is decomposed to form silicon which deposits on the silicon particles in the fluidized bed to enlarge the same and cause said enlarged particles to descend as silicon product particles from said fluidized bed reaction zone through said upward flow of fluidizing gas into a collecting chamber having interior surfaces including side walls and a base portion having passages through which an upward flow of gas is introduced which passes into said fluidized bed reaction zone, the improvement which comprises providing in said collecting chamber, in addition to said upward flow of gas, a separate high velocity jet of gas above said base portion at a velocity which is in the range of about 100 to 1200 feet per second and which is from about 50 to 5000 times the velocity of said upward flow of gas said high velocity jet causing turbulence only in a portion of said collecting chamber so as to cause a portion of the enlarged silicon product particles in said chamber to impinge upon each other and be thereby comminuted to form smaller silicon particles which are transported upwardly into said fluidized bed in said reaction zone by said upward flow of gas passing through said perforated base.
Claim 3
Dependent Claim 60 words
A process in accordance with claim 1 wherein said jet of gas is provided by a nozzle in-line with and on the axial centerline of said collecting chamber, said nozzle having a diameter of about 1/10 to 1/100 of that of said collecting chamber and the outlet of said nozzle being directed toward said base portion of said collecting chamber.
Claim 4
Dependent Claim 39 words
A process in accordance with claim 2 wherein said jet of gas is provided by a nozzle positioned from about 1/4 to 3/4 of the height of said collecting chamber and on the axial centerline of said collecting chamber.
Claim 5
Dependent Claim 21 words
A process in accordance with claim 1 wherein said temperature is in the range of about 390° C. to 1400° C.
Claim 6
Dependent Claim 21 words
A process in accordance with claim 1 wherein said temperature is in the range of about 550° C. to 1000° C.
Claim 7
Dependent Claim 21 words
A process in accordance with claim 1 wherein said silicon product particles in said collecting chamber are in a fluidized condition.
Claim 8
Dependent Claim 19 words
A method in accordance with claim 1 wherein said silicon product particles are from about 400 microns and larger.

References Cited (Backward Citations)

CA521842A Cited
US3012861A Cited
US3012862A Cited
US3897010A Cited
US4092446A Cited
US4207360A Cited
US4172667A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-01-02 1987-07-04 1988-01-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-01-02 1991-07-04 1992-01-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-01-02 1995-07-04 1996-01-03 $7700.00 Window Closed / Lapsed

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