US4661201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preferential etching of a piezoelectric material
Assignee: CTS Corp
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Filing: 1985-09-09
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Granted: 1987-04-28
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Expires: 2005-09-09
Abstract
Abstract A method for preferentially etching a piezoelectric material is disclosed wherein a portion of the piezoelectric material is controllably subjected to a concentrated thermal energy source with a force sufficient to alter the crystalline orientation of the piezoelectric material. The piezoelectric material is then treated with a suitable echant for a controlled duration, wherein the portion of the piezoelectric material altered by the concentrated thermal energy source is etched at a different etching rate than the unaltered piezoelectric material, to preferentially etch a controlled anaglyphic planar configuration upon the piezoelectric material.
Inventors
- 👤 Petros Petridis
- 👤 Darrel E. Newell
- 👤 Keneth D. Hartman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:04
CPC Classifications
C; C09; C09K; C09K13/00; C09K13/04; C09K13/08; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; H; H10; H10N; H10N30/00; H10N30/01; H10N30/08; H10N30/082
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
115 words
A method for preferentially etching a homogeneous piezoelectric material at different etching rates, which comprises: (a) controllably subjecting a portion of the piezoelectric material to a concentrated thermal energy source; said energy source of a force sufficient to alter the crystalline orientation of the piezoelectric material subjected to the concentrated energy source; (b) treating the piezoid material with a selected enchant for a controlled duration; wherein the portion of the piezoelectric material not altered by the concentrated energy source is etched at a different rate than the etching rate of the portion of the piezoelectric material altered by the concentrated thermal energy source to preferentially etch a controlled anaglyphic planar configuration upon the piezoelectric material.
Claim 2
Independent Claim
115 words
A method for preferentially etching a homogeneous piezoelectric material at different etching rates, which comprises: (a) controllably subjecting a portion of the piezoelectric material to a concentrated thermal energy source; said energy source of a force sufficient to alter the crystalline orientation of the piezoelectric material subjected to the concentrated energy source; (b) treating the piezoid material with a selected enchant for a controlled duration; wherein the portion of the piezoelectric material not altered by the concentrated energy source is etched at a different rate than the etching rate of the portion of the piezoelectric material altered by the concentrated thermal energy source to preferentially etch a controlled anaglyphic planar configuration upon the piezoelectric material.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the piezoelectric material is a quartz crystal.
Claim 4
Dependent Claim
30 words
The method of claim 1, wherein the concentrated thermal energy source is controlled by at least one of the power, time, frequency and cross-sectional area of the concentrated energy source.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein the concentrated thermal energy source is a laser beam.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein the concentrated thermal energy source is an electromagnetic beam.
Claim 7
Dependent Claim
11 words
The method of claim 1, wheren the echant is ammonium biofluoride.
Claim 8
Dependent Claim
27 words
The method of claim 1, wherein at least one of the piezoelectric material and the concentrated thermal energy source is movably positioned in relation to the other.
Claim 9
Independent Claim
112 words
A method of treating a homogeneous piezoelectric material to introduce nonhomogeneous properties, which comprise: (a) controllably subjecting a portion of the piezoelectric material to a concentrated thermal energy source, said energy source of a force sufficient to alter the anisotropic character of the piezoelectric material along at least one axis of orientation; and (b) treating the piezoelectric material with an echant, in which the echant attacks the altered portion of the piezoelectric material at a rate different from the unaltered portion of the piezoelectric material not subjected to the concentrated thermal energy source; and (c) controlling the duration of contact of the echant to produce a homogeneous piezoelectric material exhibiting non-homogeneous properties.
Claim 10
Independent Claim
112 words
A method of treating a homogeneous piezoelectric material to introduce nonhomogeneous properties, which comprise: (a) controllably subjecting a portion of the piezoelectric material to a concentrated thermal energy source, said energy source of a force sufficient to alter the anisotropic character of the piezoelectric material along at least one axis of orientation; and (b) treating the piezoelectric material with an echant, in which the echant attacks the altered portion of the piezoelectric material at a rate different from the unaltered portion of the piezoelectric material not subjected to the concentrated thermal energy source; and (c) controlling the duration of contact of the echant to produce a homogeneous piezoelectric material exhibiting non-homogeneous properties.
Claim 11
Dependent Claim
13 words
The method of claim 8, wherein the piezoelectric material is a quartz crystal.
Claim 12
Dependent Claim
30 words
The method of claim 8, wherein the concentrated thermal energy source is controlled by at least one of a power, time, frequency and cross-sectional area of the concentrated energy source.
Claim 13
Dependent Claim
15 words
The method of claim 8, wherein the concentrated thermal energy source is a laser beam.
Claim 14
Dependent Claim
15 words
The method of claim 8, wherein the concentrated thermal energy source is an electromagnetic beam.
Claim 15
Dependent Claim
11 words
The method of claim 8, wherein the echant is ammonium biofluoride.
Claim 16
Independent Claim
88 words
A method for preferentially etching a piezoelectric material, which comprises: (a) actuating a concentrated thermal energy source in proximity to a portion of the piezoelectric material at a force sufficient to alter the crystal orientation of that portion of the piezoelectric material; and (b) preferentially etching the piezoelectric material by subjecting the piezoelectric material to an echant, wherein the altered portion of the piezoelectric material is etched at a rate different from the etching rate of the unaltered piezoelectric material to effect a preferential anaglyphic planar configuration therebetween.
Claim 17
Independent Claim
88 words
A method for preferentially etching a piezoelectric material, which comprises: (a) actuating a concentrated thermal energy source in proximity to a portion of the piezoelectric material at a force sufficient to alter the crystal orientation of that portion of the piezoelectric material; and (b) preferentially etching the piezoelectric material by subjecting the piezoelectric material to an echant, wherein the altered portion of the piezoelectric material is etched at a rate different from the etching rate of the unaltered piezoelectric material to effect a preferential anaglyphic planar configuration therebetween.
Claim 18
Dependent Claim
27 words
The method of claim 14, wherein at least one of the piezoelectric material and the concentrated thermal energy source is movably positioned in relation to the other.
Claim 19
Dependent Claim
30 words
The method of claim 14, wherein the concentrated thermal energy source is controlled by at least one of a power, time, frequency and cross-sectional area of the concentrated energy source.
Claim 20
Dependent Claim
15 words
The method of claim 14, wherein the concentrated thermal energy source is a laser beam.
Claim 21
Dependent Claim
15 words
The method of claim 14, wherein the concentrated thermal energy source is an electromagnetic beam.
Claim 22
Dependent Claim
11 words
The method of claim 14, wherein the echant is ammonium biofluoride.
Claim 23
Dependent Claim
19 words
The method of claim 14, wherein the piezoelectric material is in contact with the echant for a controlled duration.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-27 | 1990-10-27 | 1991-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-27 | 1994-10-27 | 1995-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-27 | 1998-10-27 | 1999-04-28 | $7700.00 | Window Closed / Lapsed |