Semiconductor integrated circuit device having a carrier trapping trench arrangement

Claim 2

A semiconductor integrated circuit device comprising: a semiconductor substrate of first conductivity type having one main surface; a memory cell array formed on said semiconductor substrate and including a plurality of memory cells arrayed in rows and column; a peripheral circuit formed on said semiconductor substrate in portions other than said memory cell array; and a carrier trapping region formed in said semiconductor substrate between said memory cell array and said peripheral circuit, wherein said carrier trapping region comprises trenches formed in the main surface of said semiconductor substrate, an insulating film which is formed on the surface of said trenches, and an electrode made of a conductive material formed on the surface of said insulating film in said trenches.

Claim 3

A semiconductor integrated circuit device according to claim 1, wherein a plurality of said trenches are formed at a predetermined spacing from one another which spacing is set such that depletion layers formed in said semiconductor substrate around said trenches can be coupled to each other under a fixed potential applied to said electrode.

Claim 4

A semiconductor integrated circuit device comprising: a semiconductor substrate of first conductivity type having one main surface; a memory cell array formed in said semiconductor substrate and including a plurality of memory cells arrayed in rows and columns, wherein said memory cell comprises a MISFET and a capacitor connected in series with each other, wherein said capacitor is formed by using a first trench formed in the main surface of said semiconductor substrate, said capacitor having a first insulating film formed on the surface of said first trench and a first electrode formed on said first insulating film; a peripheral circuit formed in said semiconductor substrate in portions other than said memory cell array; and a carrier trapping region formed in said semiconductor substrate between said memory cell array and sid peripheral circuit, wherein said carrier trapping region includes a plurality of second trenches formed in the main surface of said semiconductor substrate which second trenches have substantially the same shape as said first trench, wherein a second insulating film is formed on the surface of said second trenches, wherein a second electrode is formed on said second insulating film, and wherein said first electrode and said second electrode have the same potential.

Claim 5

A semiconductor integrated circuit device comprising: a semiconductor substrate of first conductivity type having one main surface; a memory cell array formed in said semiconductor substrate and including a plurality of memory cells arrayed in rows and columns, wherein said memory cell comprises a MISFET and a capacitor connected in series with each other, wherein said capacitor is formed by using a first trench formed in the main surface of said semiconductor substrate, said capacitor having a first insulating film formed on the surface of said first trench and a first electrode formed on said first insulating film; a peripheral circuit formed in said semiconductor substrate in portions other than said memory cell array; and a carrier trapping region formed in said semiconductor substrate between said memory cell array and sid peripheral circuit, wherein said carrier trapping region includes a plurality of second trenches formed in the main surface of said semiconductor substrate which second trenches have substantially the same shape as said first trench, wherein a second insulating film is formed on the surface of said second trenches, wherein a second electrode is formed on said second insulating film, and wherein said first electrode and said second electrode have the same potential.

Claim 6

A semiconductor integrated circuit device according to claim 3, wherein said first and second electrodes are formed integrally with each other.