Method of producing MOS FET type semiconductor device

Claim 1

A method of producing a semiconductor memory device including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of: (a) forming a gate insulating layer on the semiconductor substrate; (b) forming an aluminum gate electrode on the gate insulating layer; (c) introducing impurities into the semiconductor substrate to form doped regions by ion-implanting the impurities using the aluminum gate as a mask; (d) annealing the doped regions by heating the semiconductor substrate to a temperature of from 200° C. to 300° C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μm or more; (e) oxidizing the aluminum gate electrode to form an aluminum oxide layer thereon; (f) forming an aluminum capacitor plate on the gate insulating layer and the aluminum oxide layer; (g) forming an intermediate insulating layer on the entire surface of said device; (h) opening windows through the gate insulating layer and the intermediate insulating layer to form contact holes; and (i) forming a patterned layer of aluminum on the intermediate insulating layer.

Claim 2

A method of producing a semiconductor memory device including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of: (a) forming a gate insulating layer on the semiconductor substrate; (b) forming an aluminum gate electrode on the gate insulating layer; (c) introducing impurities into the semiconductor substrate to form doped regions by ion-implanting the impurities using the aluminum gate as a mask; (d) annealing the doped regions by heating the semiconductor substrate to a temperature of from 200° C. to 300° C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μm or more; (e) oxidizing the aluminum gate electrode to form an aluminum oxide layer thereon; (f) forming an aluminum capacitor plate on the gate insulating layer and the aluminum oxide layer; (g) forming an intermediate insulating layer on the entire surface of said device; (h) opening windows through the gate insulating layer and the intermediate insulating layer to form contact holes; and (i) forming a patterned layer of aluminum on the intermediate insulating layer.

Claim 4

A method of producing a semiconductor memory device, including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of: (a) forming a gate insulating layer on the semiconductor substrate; (b) forming an aluminum capacitor plate on the gate insulating layer; (c) oxidizing the capacitor plate to form an aluminum oxide layer thereon; (d) forming an aluminum gate electrode on the gate insulating layer and on the aluminum oxide layer; (e) introducing impurities into the semiconductor substrate to form a doped region by ion-implantation using the aluminum gate electrode as a mask; (f) annealing the doped region by heating the semiconductor substrate to a temperature of from 200° C. to 300° C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μm or more; (g) forming an intermediate insulating layer on the entire surface of said device; (h) opening windows through both the gate insulating layer and the intermediate insulating layer to form contact holes; and (i) forming a patterned layer of aluminum on the intermediate insulating layer.

Claim 5

A method of producing a semiconductor memory device, including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of: (a) forming a gate insulating layer on the semiconductor substrate; (b) forming an aluminum capacitor plate on the gate insulating layer; (c) oxidizing the capacitor plate to form an aluminum oxide layer thereon; (d) forming an aluminum gate electrode on the gate insulating layer and on the aluminum oxide layer; (e) introducing impurities into the semiconductor substrate to form a doped region by ion-implantation using the aluminum gate electrode as a mask; (f) annealing the doped region by heating the semiconductor substrate to a temperature of from 200° C. to 300° C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μm or more; (g) forming an intermediate insulating layer on the entire surface of said device; (h) opening windows through both the gate insulating layer and the intermediate insulating layer to form contact holes; and (i) forming a patterned layer of aluminum on the intermediate insulating layer.