CMOS input buffer accepting TTL level inputs

Claim 5

An input buffer circuit for translating transistor-transistor logic (TTL) level input signals into complementary metal oxide semiconductor (CMOS) level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, said first CMOS inverter stage being coupled to said input terminal and generating high and low level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating high and low level output signals to said output terminal; means for coupling said first reference voltage to said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to one of said TTL level input signals, such that when said one TTL level input signal is applied at said input terminal said first CMOS inverter stage generates said low level output signal without providing a DC path; and means for coupling said second reference voltage to said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage high level output signal, such that when said first CMOS inverter stage high level output signal is applied to said second CMOS inverter stage said second CMOS inverter stage generates said low level output signal at said output terminal without provide a DC path.

Claim 6

An input buffer circuit for translating transistor-transistor logic (TTL) level input signals into complementary metal oxide semiconductor (CMOS) level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, said first CMOS inverter stage being coupled to said input terminal and generating high and low level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating high and low level output signals to said output terminal; means for coupling said first reference voltage to said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to one of said TTL level input signals, such that when said one TTL level input signal is applied at said input terminal said first CMOS inverter stage generates said low level output signal without providing a DC path; and means for coupling said second reference voltage to said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage high level output signal, such that when said first CMOS inverter stage high level output signal is applied to said second CMOS inverter stage said second CMOS inverter stage generates said low level output signal at said output terminal without provide a DC path.

Claim 7

The input buffer circuit as recited in claim 3 wherein said reference circuit comprises: a first lightly depleted N-channel transistor having a drain coupled to said first supply voltage, and a gate and a source coupled to a first terminal providing said second reference voltage; a second lightly depleted N-channel transistor having a drain coupled to the source of said first N-channel transistor, and a gate and a source coupled to a second terminal producing said first reference voltage, said second N-channel transistor having a channel width-to-length ratio with respect to that of said first N-channel transistor such that said first reference voltage is a predetermined amount lower in magnitude than said second reference voltage.

Claim 8

The input buffer circuit as recited in claim 4 wherein said reference circuit further comprises: a third N-channel transistors having a drain coupled to said first supply voltage, a gate coupled to said second terminal, and a source; a first P-channel transistor having a source coupled to said source of said third N-channel transistor, a gate coupled to a third terminal, and a drain coupled to said second supply voltage; a fourth N-channel transistor having a drain coupled to said second terminal, a gate coupled to said third terminal, and a source; a fifth lightly depleted N-channel transistor having a drain coupled to the source of said fourth N-channel transistor, a gate coupled to a fourth terminal, and a source coupled to said second supply voltage; a second P-channel transistor having a source coupled to said second terminal, and a gate and a source coupled to said fourth terminal; a sixth N-channel transistor having a drain and a gate coupled to said fourth terminal, and a source coupled to said third terminal; a seventh N-channel transistor having a drain and a gate coupled to said third terminal, and a source; and an eighth N-channel transistor having a drain coupled to the source of said seventh N-channel transistor, a gate coupled to the source of said first P-channel transistor, and a source coupled to said second supply voltage.

Claim 9

The input buffer circuit as recited in claim 4, wherein said reference circuit further comprises: a first P-channel transistor having a source coupled to said second terminal, and a gate and a drain coupled to a third terminal; a third N-channel transistor having a drain and a gate coupled to said third terminal, and a source coupled to a fourth terminal; a fourth N-channel transistor having a drain coupled to said second terminal, a gate coupled to said fourth terminal, and a source coupled to said second supply voltage; and a fifth N-channel transistor having a drain and a gate coupled to said fourth terminal, and a source coupled to said second supply voltage.

Claim 10

A complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; and means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive.

Claim 11

A complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; and means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive.

Claim 12

A monolithic integrated circuit having fabricated thereon at least one complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said input buffer circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; and means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive.

Claim 13

A monolithic integrated circuit having fabricated thereon at least one complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said input buffer circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first and second reference voltages; first and second CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; and means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive.

Claim 14

An input buffer circuit for translating transistor-transistor logic (TTL) level input signals into complementary metal oxide semiconductor (CMOS) level input signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, said first CMOS inverter stage being coupled to said input terminal and generating high and low level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating high and low level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating high and low level output signals to said output terminal; means for coupling said first reference voltage to said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to one of said TTL level input signals, such that when said one TTL level input signal is applied at said input terminal said first CMOS inverter stage generates said low level output signal without providing a DC path; means for coupling said second reference voltage to said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage high level output signal, such that when said first CMOS inverter stage high level output signal is applied to said second CMOS inverter stage said second CMOS inverter stage generates said low level output signal without providing a DC path; and means for coupling said third reference voltage to said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage high level output signal, such that when said second CMOS inverter stage high level output signal is applied to said third CMOS inverter stage said third CMOS inverter stage generates said low level output signal at said output terminal without providing a DC path.

Claim 15

An input buffer circuit for translating transistor-transistor logic (TTL) level input signals into complementary metal oxide semiconductor (CMOS) level input signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, said first CMOS inverter stage being coupled to said input terminal and generating high and low level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating high and low level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating high and low level output signals to said output terminal; means for coupling said first reference voltage to said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to one of said TTL level input signals, such that when said one TTL level input signal is applied at said input terminal said first CMOS inverter stage generates said low level output signal without providing a DC path; means for coupling said second reference voltage to said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage high level output signal, such that when said first CMOS inverter stage high level output signal is applied to said second CMOS inverter stage said second CMOS inverter stage generates said low level output signal without providing a DC path; and means for coupling said third reference voltage to said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage high level output signal, such that when said second CMOS inverter stage high level output signal is applied to said third CMOS inverter stage said third CMOS inverter stage generates said low level output signal at said output terminal without providing a DC path.

Claim 16

The input buffer circuit as recited in claim 9, wherein said reference circuit comprises: a first lightly depleted N-channel transistor having a drain coupled to said first supply voltage, and a gate and a source coupled to a first terminal providing said third reference voltage; a second lightly depleted N-channel transistor having a drain coupled to the source of said first N-channel transistor, and a gate and a source coupled to a second terminal providing said second reference voltage, said second N-channel transistor having a channel width-to-length ratio with respect to that of said first N-channel transistor such that said second reference voltage is a predetermined amount lower in magnitude than said third reference voltage. a third lightly depleted N-channel transistor having a drain coupled to the source of said second N-channel transistor, and a gate and a source coupled to a third terminal providing said first reference voltage, said third N-channel transistor having a channel width-to-length ratio with respect to that of said second N-channel transistor such that said first reference voltage is a predetermined amount lower in magnitude than said second reference voltage.

Claim 17

The input buffer circuit as recited in claim 10 wherein said reference circuit further comprises: a fourth N-channel transistor having a drain coupled to said first supply voltage, a gate coupled to said third terminal, and a source; a first P-channel transistor having a source coupled to said source of said fourth N-channel transistor, a gate coupled to a fourth terminal, and a drain coupled to said second supply voltage; a fifth N-channel transistor having a drain coupled to said third terminal, a gate coupled to said fourth terminal, and a source; a sixth lightly depleted N-channel transistor having a drain coupled to the source of said fifth N-channel transistor, a gate coupled to a fifth terminal, and a source coupled to said second supply voltage; a second P-channel transistor having a source coupled to said third terminal, and a gate and a source coupled to said fifth terminal; a seventh N-channel transistor having a drain and a gate coupled to said fifth terminal, and a source coupled to said fourth terminal; an eighth N-channel transistor having a drain and a gate coupled to said fourth terminal, and a source; and a ninth N-channel transistor having a drain coupled to the source of said eighth N-channel transistor, a gate coupled to the source of said first P-channel transistor, and a source coupled to said second supply voltage.

Claim 18

A complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input in terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive; and means for coupling said third reference voltage to said gate electrode of said second N-channel transistor in said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage second level output signal, such that when said second CMOS inverter stage second level output signal is applied to said third CMOS inverter stage said P-channel transistor of said third CMOS inverter stage becomes non-conductive.

Claim 19

A complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input in terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied at said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; means for coupling said second reference voltage to said gate electrode of said second N-channel transistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive; and means for coupling said third reference voltage to said gate electrode of said second N-channel transistor in said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage second level output signal, such that when said second CMOS inverter stage second level output signal is applied to said third CMOS inverter stage said P-channel transistor of said third CMOS inverter stage becomes non-conductive.

Claim 20

A monolithic integrated circuit having fabricated thereon at least one complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said input buffer circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied to said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; means for coupling said second reference voltage to said gate electrode of said second N-channel resistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive; and means for coupling said third reference voltage to said gate electrode of said second N-channel transistor in said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage second level output signal, such that when said second CMOS inverter stage second level output signal is applied to said third CMOS inverter stage said P-channel transistor of said third CMOS inverter stage becomes non-conductive.

Claim 21

A monolithic integrated circuit having fabricated thereon at least one complementary metal oxide semiconductor (CMOS) input buffer circuit accepting first and second transistor-transistor logic (TTL) level input signals and outputting first and second CMOS level output signals, said input buffer circuit comprising: an input terminal for accepting said TTL level input signals; an output terminal for outputting said CMOS level output signals; first and second supply voltages; a reference circuit coupled to said first and second supply voltages for providing first, second, and third reference voltages; first, second, and third CMOS inverter stages, each comprising at least a first N-channel transistor and a P-channel transistor coupled as an inverter and a second N-channel transistor having a first electrode coupled to said first supply voltage, a second electrode coupled to said P-channel transistor, and a gate electrode, said first CMOS inverter stage being coupled to said input terminal and generating first and second level output signals, said second CMOS inverter stage being coupled to receive said output signals of said first CMOS inverter stage and generating first and second level output signals, and said third CMOS inverter stage being coupled to receive said output signals of said second CMOS inverter stage and generating first and second level output signals to said output terminal; means for coupling said first reference voltage to said gate electrode of said second N-channel transistor in said first CMOS inverter stage, the magnitude of said first reference voltage being of a predetermined value relative to said second TTL level input signal, such that when said second TTL level input signal is applied to said input terminal said P-channel transistor of said first CMOS inverter stage becomes non-conductive; means for coupling said second reference voltage to said gate electrode of said second N-channel resistor in said second CMOS inverter stage, the magnitude of said second reference voltage being of a predetermined value relative to said first CMOS inverter stage second level output signal, such that when said first CMOS inverter stage second level output signal is applied to said second CMOS inverter stage said P-channel transistor of said second CMOS inverter stage becomes non-conductive; and means for coupling said third reference voltage to said gate electrode of said second N-channel transistor in said third CMOS inverter stage, the magnitude of said third reference voltage being of a predetermined value relative to said second CMOS inverter stage second level output signal, such that when said second CMOS inverter stage second level output signal is applied to said third CMOS inverter stage said P-channel transistor of said third CMOS inverter stage becomes non-conductive.