Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
120 words
An integrated buffer circuit having a selectable stabilized trip voltage; said circuit comprising an input stage and a reference stage; each of said stages including a field effect input transistor, first resistive means coupling a drain of said input transistor to a bias source for providing a resistance there between that is substantially constant, and second resistive means coupling a source of said input transistor to another bias source for providing a resistance there between that is variable in response to control signals applied thereto; means for biasing said reference stage in the linear region at said trip voltage; and means for coupling signals generated by said reference stage to all of said second resistive means as said control signals.
Claim 2
Dependent Claim
120 words
An integrated buffer circuit having a selectable stabilized trip voltage; said circuit comprising an input stage and a reference stage; each of said stages including a field effect input transistor, first resistive means coupling a drain of said input transistor to a bias source for providing a resistance there between that is substantially constant, and second resistive means coupling a source of said input transistor to another bias source for providing a resistance there between that is variable in response to control signals applied thereto; means for biasing said reference stage in the linear region at said trip voltage; and means for coupling signals generated by said reference stage to all of said second resistive means as said control signals.
Claim 3
Dependent Claim
16 words
A circuit according to claim 1, wherein said field effect transistors are MOS field effect transistors.
Claim 4
Dependent Claim
16 words
A circuit according to claim 1, wherein said field effect transistors are P-channel field effect transistors.
Claim 5
Dependent Claim
16 words
A circuit according to claim 1, wherein said field effect transistors are N-channel field effect transistors.
Claim 6
Dependent Claim
27 words
A circuit according to claim 1, wherein said first resistive means in said input stage and said reference stage each consist of a single field effect transistor.
Claim 7
Dependent Claim
27 words
A circuit according to claim 1, wherein said second resistive means in said input stage and said reference stage each consist of a single field effect transistor.
Claim 8
Dependent Claim
60 words
A circuit according to claim 1, wherein said input stage and said reference stage each further include a second field effect transistor having a drain connected to a bias source through a third resistive means, a gate coupled to said drain of said first field effect transistor, and a source coupled to said source of said first field effect transistor.
Claim 9
Dependent Claim
24 words
A circuit according to claim 7, wherein said resistance of said first resistive means is greater than said resistance of said third resistive means.
Claim 10
Dependent Claim
35 words
A circuit according to claim 7, wherein said input stage further includes a pair of serially connected field effect transistors having gates respectively coupled to said drain of said first and second field effect transistors.
Claim 11
Dependent Claim
28 words
A circuit according to claim 1, and further including a plurality of said input stages coupled in parallel to said reference stage to simultaneously receive said control signals.