Vertical mis-field effect transistor with low forward resistance

Claim 2

MIS-FET, comprising a semiconductor substrate of a given first conductivity type having first and second surfaces, at least one channel zone of a second conductivity type opposite said first conductivity type embedded in said first surface of said substrate, a source zone of said first conductivity type embedded in said channel zone a source contact connected to the source zone, a drain zone having a surface and adjoining said first surface of said substrate, a drain electrode connected to said second surface of said substrate, an insulating layer disposed on said first surface of said substrate, at least one gate electrode disposed on part of said insulating layer, at least one further zone of said second conductivity type embedded in the surface of said drain zone and a further zone contact being connected to said at least one further zone, and said gate electrode covering part of said further zone and said part of said drain zone emerging to said first surface of said substrate, means for applying a first voltage of opposite polarity of the majority carriers of the drain zone to the drain electrode, a reference voltage of opposite polarity of said first voltage to the source contact and a gate voltage of the same polarity as the first voltage to the gate electrode, and wherein said further zone contact is electrically connected to said at least one gate electrode for injecting charge carriers of the same polarity as the first voltage into said drain zone.

Claim 3

MIS-FET according to claim 1, wherein said further zone and said channel zone have the same depth and doping concentration.

Claim 4

MIS-FET according to claim 1 or 2, wherein said at least one further zone and channel zone are in the form of a plurality of further zones and channel zones in said substrate being at least substantially uniformly distributed over said first surface of said substrate, and said contact connected to said at least one further zone is in the form of a plurality of contacts each being connected to one of said further zones and being electrically connected to each other.

Claim 5

MIS-FET according to claim 1 or 2, wherein said at least one further zone and channel zone are in the form of strip-shaped further zones and strip-shaped channel zones being alternatingly disposed relative to each other in said substrate, and said contact connected to said at least one further zone is the the form of a plurality of contacts each being connected to one of said further zones and being electrically connected to each other.

Claim 6

MIS-FET according to claim 1 or 2, wherein said at least one further zone and channel zone are each comb-shaped and inter-leaved with each other.

Claim 7

MIS-FET, comprising a semiconductor substrate of a given first conductivity type having first and second surfaces, at least one channel zone of a second conductivity type opposite said first conductivity type embedded in said first surface of said substrate, a source zone of said first conductivity type embedded in said channel zone, a source contact connected to the source zone, a drain zone having a surface and adjoining said first surface in said substrate, a drain electrode connected to said second surface of said substrate, an insulating layer disposed on said first surface of said substrate, at least one gate electrode disposed on part of said insulating layer, at least one further zone of said second conductivity type embedded in the surface of said drain zone, and a further zone contact being connected to said at least one further zone, and said gate electrode covering part of said further zone and said part of said drain zone emerging to said first surface of said substrate and means for applying a first voltage of opposite polarity of the majority carriers of the drain zone to the drain electrode, a reference voltage of opposite polarity of said first voltage to the source contact and a gate voltage of the same polarity as the first voltage to the gate electrode, including a resistor connected between said further zone contact and said at least one gate electrode for injecting charge carriers of the same polarity as the first voltage into said drain zone.

Claim 8

MIS-FET, comprising a semiconductor substrate of a given first conductivity type having first and second surfaces, at least one channel zone of a second conductivity type opposite said first conductivity type embedded in said first surface of said substrate, a source zone of said first conductivity type embedded in said channel zone, a source contact connected to the source zone, a drain zone having a surface and adjoining said first surface in said substrate, a drain electrode connected to said second surface of said substrate, an insulating layer disposed on said first surface of said substrate, at least one gate electrode disposed on part of said insulating layer, at least one further zone of said second conductivity type embedded in the surface of said drain zone, and a further zone contact being connected to said at least one further zone, and said gate electrode covering part of said further zone and said part of said drain zone emerging to said first surface of said substrate and means for applying a first voltage of opposite polarity of the majority carriers of the drain zone to the drain electrode, a reference voltage of opposite polarity of said first voltage to the source contact and a gate voltage of the same polarity as the first voltage to the gate electrode, including a resistor connected between said further zone contact and said at least one gate electrode for injecting charge carriers of the same polarity as the first voltage into said drain zone.