Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
23 words
A novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group.
Claim 2
Dependent Claim
23 words
A novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group.
Claim 3
Dependent Claim
34 words
A novolak resin according to claim 1, wherein said structural units are represented by the general formula (A): ##STR12## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 4
Dependent Claim
18 words
A novolak resin according to claim 2, further comprising second structural units represented by the formula (C): ##STR13##
Claim 5
Dependent Claim
36 words
A novolak resin according to claim 2, wherein said structural units are represented by the general formula (AA): ##STR14## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 6
Dependent Claim
21 words
A novolak resin according to claim 2, wherein the degree of polymerization of said structural units is not greater than 20.
Claim 7
Dependent Claim
25 words
A novolak resin according to claim 1, wherein said structural units are represented by the general formula (B): ##STR15## wherein n is a positive integer.
Claim 8
Dependent Claim
18 words
A novolak resin according to claim 6, further comprising second structural units represented by the formula (C): ##STR16##
Claim 9
Dependent Claim
19 words
A novolak resin according to claim 6, wherein said n in the formula (B) is not larger than 4.
Claim 10
Dependent Claim
21 words
A novolak resin according to claim 6, wherein the degree of polymerization of said structural units is not greater than 20.
Claim 11
Dependent Claim
28 words
A novolak resin according to claim 1, wherein the content of said structural units in the novolak resin is in the range from 20 to 80% by mol.
Claim 12
Dependent Claim
33 words
A resist material comprising a novolak resin, which comprises structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group, and a photosensitive diazo compound.
Claim 13
Dependent Claim
33 words
A resist material comprising a novolak resin, which comprises structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group, and a photosensitive diazo compound.
Claim 14
Dependent Claim
34 words
A resist material according to claim 11, wherein said structural units are represented by the general formula (A): ##STR17## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 15
Dependent Claim
22 words
A resist material according to claim 12, wherein said novolak resin further comprises second structural units represented by the formula (C): ##STR18##
Claim 16
Dependent Claim
36 words
A resist material according to claim 12, wherein said structural units are represented by the general formula (AA): ##STR19## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 17
Dependent Claim
25 words
A resist material according to claim 11, wherein said structural units are represented by the general formula (B): ##STR20## wherein n is a positive integer.
Claim 18
Dependent Claim
22 words
A resist material according to claim 15, wherein said novolak resin further comprises second structural units represented by the formula (C): ##STR21##
Claim 19
Dependent Claim
19 words
A resist material according to claim 15, wherein said n in the formula (B) is not larger than 4.
Claim 20
Dependent Claim
28 words
A resist material according to claim 11, wherein the content of said structural units in said novolak resin is in the range from 20 to 80% by mol.
Claim 21
Dependent Claim
28 words
A resist material according to claim 11, wherein the proportion of said diazo compound to said novolak resin is in the range from 5:100 to 100:100 by weight.
Claim 22
Dependent Claim
15 words
A resist material according to claim 11, wherein said diazo compound is a quinonediazide compound.
Claim 23
Dependent Claim
28 words
A resist material according to claim 20, wherein the proportion of said diazo compound to said novolak resin is in the range from 15:100 to 50:100 by weight.
Claim 24
Dependent Claim
47 words
A resist material according to claim 11, wherein said diazo compound is representated by general formula (D): ##STR22## wherein each of R' and R" represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, and R' and R" is either identical or different.
Claim 25
Dependent Claim
28 words
A resist material according to claim 22, wherein the proportion of said diazo compound to said novolak resin is in the range from 20:100 to 50:100 by weight.
Claim 26
Independent Claim
107 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprisng the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate; forming resist film on said organic polymer layer by using a resist material which comprises a novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group and a photosensitive diazo compound; forming a desired pattern in said resist film by a lithography technique; and etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask.
Claim 27
Independent Claim
107 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprisng the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate; forming resist film on said organic polymer layer by using a resist material which comprises a novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group and a photosensitive diazo compound; forming a desired pattern in said resist film by a lithography technique; and etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask.
Claim 28
Dependent Claim
33 words
A method according to claim 24, wherein said structural units are represented by the general formula (A): ##STR23## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 29
Dependent Claim
35 words
A method according to claim 25, wherein said structural formula is represented by the general formula (AA): ##STR24## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 30
Dependent Claim
21 words
A method according to claim 25, wherein said novolak resin further comprises secondary structural units represented by the formula (C): ##STR25##
Claim 31
Dependent Claim
28 words
A method according to claim 24, wherein said structural units are represente by the general formula (B): ##STR26## wherein n is a positive integer not larger than 4.
Claim 32
Dependent Claim
21 words
A method according to claim 28, wherein said novolak resin further comprises secondary structural units represented by the formula (C): ##STR27##
Claim 33
Dependent Claim
14 words
A method according to claim 24, wherein said diazo compound is a quinonediazide compound.
Claim 34
Dependent Claim
47 words
A method according to claim 24, wherein said diazo compound is represented by the general formula (D): ##STR28## wherein each of R' and R" represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, and R' and R" are either identical or different.
Claim 35
Dependent Claim
31 words
A method according to claim 24, further comprisng the step of curing the patterned resist film before the step of etching said organic polymer layer by irradiation with deep UV rays.
Claim 36
Dependent Claim
15 words
A method according to claim 24, wherein said lithography technique is an optical lithography technique.
Claim 37
Dependent Claim
31 words
A method according to claim 24, wherein said lithography technique uses an aqueous solution of an alkaline compound as a developer liquid to develop the pattern delineated in said resist film.