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US4624909A Expired / Lapsed US ⏱️ 0.0 years remaining

Silicon-containing novolak resin and resist material and pattern forming method using same

Assignee: NEC Corp
•
Filing: 1985-04-18
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Granted: 1986-11-25
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Expires: 2005-04-18
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Abstract

Abstract Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.

Inventors

  • 👤 Yasushi Saotome
  • 👤 Hiroshi Gokan
  • 👤 Kazuhide Saigo
  • 👤 Masayoshi Suzuki
  • 👤 Yoshitake Ohnishi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 18:44
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; C; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/0803; C07F7/081; C08; C08G; C08G8/00; C08G8/04; C08G8/28; C08L; C08L61/00; C08L61/04; C08L61/06; C08L61/14; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106

Claims Analysis

Total Claims: 37
Claim 1
Independent Claim 23 words
A novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group.
Claim 2
Dependent Claim 23 words
A novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group.
Claim 3
Dependent Claim 34 words
A novolak resin according to claim 1, wherein said structural units are represented by the general formula (A): ##STR12## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 4
Dependent Claim 18 words
A novolak resin according to claim 2, further comprising second structural units represented by the formula (C): ##STR13##
Claim 5
Dependent Claim 36 words
A novolak resin according to claim 2, wherein said structural units are represented by the general formula (AA): ##STR14## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 6
Dependent Claim 21 words
A novolak resin according to claim 2, wherein the degree of polymerization of said structural units is not greater than 20.
Claim 7
Dependent Claim 25 words
A novolak resin according to claim 1, wherein said structural units are represented by the general formula (B): ##STR15## wherein n is a positive integer.
Claim 8
Dependent Claim 18 words
A novolak resin according to claim 6, further comprising second structural units represented by the formula (C): ##STR16##
Claim 9
Dependent Claim 19 words
A novolak resin according to claim 6, wherein said n in the formula (B) is not larger than 4.
Claim 10
Dependent Claim 21 words
A novolak resin according to claim 6, wherein the degree of polymerization of said structural units is not greater than 20.
Claim 11
Dependent Claim 28 words
A novolak resin according to claim 1, wherein the content of said structural units in the novolak resin is in the range from 20 to 80% by mol.
Claim 12
Dependent Claim 33 words
A resist material comprising a novolak resin, which comprises structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group, and a photosensitive diazo compound.
Claim 13
Dependent Claim 33 words
A resist material comprising a novolak resin, which comprises structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group, and a photosensitive diazo compound.
Claim 14
Dependent Claim 34 words
A resist material according to claim 11, wherein said structural units are represented by the general formula (A): ##STR17## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 15
Dependent Claim 22 words
A resist material according to claim 12, wherein said novolak resin further comprises second structural units represented by the formula (C): ##STR18##
Claim 16
Dependent Claim 36 words
A resist material according to claim 12, wherein said structural units are represented by the general formula (AA): ##STR19## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 17
Dependent Claim 25 words
A resist material according to claim 11, wherein said structural units are represented by the general formula (B): ##STR20## wherein n is a positive integer.
Claim 18
Dependent Claim 22 words
A resist material according to claim 15, wherein said novolak resin further comprises second structural units represented by the formula (C): ##STR21##
Claim 19
Dependent Claim 19 words
A resist material according to claim 15, wherein said n in the formula (B) is not larger than 4.
Claim 20
Dependent Claim 28 words
A resist material according to claim 11, wherein the content of said structural units in said novolak resin is in the range from 20 to 80% by mol.
Claim 21
Dependent Claim 28 words
A resist material according to claim 11, wherein the proportion of said diazo compound to said novolak resin is in the range from 5:100 to 100:100 by weight.
Claim 22
Dependent Claim 15 words
A resist material according to claim 11, wherein said diazo compound is a quinonediazide compound.
Claim 23
Dependent Claim 28 words
A resist material according to claim 20, wherein the proportion of said diazo compound to said novolak resin is in the range from 15:100 to 50:100 by weight.
Claim 24
Dependent Claim 47 words
A resist material according to claim 11, wherein said diazo compound is representated by general formula (D): ##STR22## wherein each of R' and R" represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, and R' and R" is either identical or different.
Claim 25
Dependent Claim 28 words
A resist material according to claim 22, wherein the proportion of said diazo compound to said novolak resin is in the range from 20:100 to 50:100 by weight.
Claim 26
Independent Claim 107 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprisng the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate; forming resist film on said organic polymer layer by using a resist material which comprises a novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group and a photosensitive diazo compound; forming a desired pattern in said resist film by a lithography technique; and etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask.
Claim 27
Independent Claim 107 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprisng the steps of: forming an organic polymer layer which can be etched by dry etching on a substrate; forming resist film on said organic polymer layer by using a resist material which comprises a novolak resin comprising structural units having a trimethylsilyl group attached to benzene ring of a phenol via at least one methylene group and a photosensitive diazo compound; forming a desired pattern in said resist film by a lithography technique; and etching said organic polymer layer by a dry etching technique with the patterned resist film as a mask.
Claim 28
Dependent Claim 33 words
A method according to claim 24, wherein said structural units are represented by the general formula (A): ##STR23## wherein R represents hydrogen atom or an alkyl group, and n is a positive integer.
Claim 29
Dependent Claim 35 words
A method according to claim 25, wherein said structural formula is represented by the general formula (AA): ##STR24## wherein R represents hydrogen atom or methyl group, and n is an integer of 1 to 3.
Claim 30
Dependent Claim 21 words
A method according to claim 25, wherein said novolak resin further comprises secondary structural units represented by the formula (C): ##STR25##
Claim 31
Dependent Claim 28 words
A method according to claim 24, wherein said structural units are represente by the general formula (B): ##STR26## wherein n is a positive integer not larger than 4.
Claim 32
Dependent Claim 21 words
A method according to claim 28, wherein said novolak resin further comprises secondary structural units represented by the formula (C): ##STR27##
Claim 33
Dependent Claim 14 words
A method according to claim 24, wherein said diazo compound is a quinonediazide compound.
Claim 34
Dependent Claim 47 words
A method according to claim 24, wherein said diazo compound is represented by the general formula (D): ##STR28## wherein each of R' and R" represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, and R' and R" are either identical or different.
Claim 35
Dependent Claim 31 words
A method according to claim 24, further comprisng the step of curing the patterned resist film before the step of etching said organic polymer layer by irradiation with deep UV rays.
Claim 36
Dependent Claim 15 words
A method according to claim 24, wherein said lithography technique is an optical lithography technique.
Claim 37
Dependent Claim 31 words
A method according to claim 24, wherein said lithography technique uses an aqueous solution of an alkaline compound as a developer liquid to develop the pattern delineated in said resist film.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-11-24 1990-05-26 1990-11-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-11-24 1994-05-26 1994-11-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-11-24 1998-05-26 1998-11-25 $7700.00 Window Closed / Lapsed

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