Patent US4618871A successfully refreshed from Google Patents.
US4618871A
Expired / Lapsed
US
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Schottky power diode
Assignee: Siemens AG
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Filing: 1983-05-16
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Granted: 1986-10-21
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Expires: 2003-05-16
Abstract
Abstract A Schottky power diode includes a semiconductor substrate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.
Inventors
- 👤 Heinz Mitlehner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/115; H10D8/00; H10D8/60
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
137 words
In a Schottky power diode, comprising a semiconductor substrate having a given band gap, an insulating layer disposed on said substrate, a first contact making Schottky contact with said substrate through a window formed in said insulating layer, and a semi-insulating layer disposed on said insulating layer and electrically connected to said first contact for receiving a fixed potential at a lateral distance from said first contact, said semi-insulating layer having a resistivity in the range of 10 5 and 10 11 ohm .sup.. cm; the improvement wherein said semi-insulating layer has a portion thereof disposed between said first contact and said substrate, said portion having a band gap which is larger than said given band gap of said substrate, said Schottky power diode further including a means for applying a substrate potential to said semi-insulating layer.
Claim 2
Dependent Claim
137 words
In a Schottky power diode, comprising a semiconductor substrate having a given band gap, an insulating layer disposed on said substrate, a first contact making Schottky contact with said substrate through a window formed in said insulating layer, and a semi-insulating layer disposed on said insulating layer and electrically connected to said first contact for receiving a fixed potential at a lateral distance from said first contact, said semi-insulating layer having a resistivity in the range of 10 5 and 10 11 ohm .sup.. cm; the improvement wherein said semi-insulating layer has a portion thereof disposed between said first contact and said substrate, said portion having a band gap which is larger than said given band gap of said substrate, said Schottky power diode further including a means for applying a substrate potential to said semi-insulating layer.
Claim 3
Dependent Claim
29 words
Schottky power diode according to claim 1, wherein said means includes a second contact disposed in said insulating layer and eletrically connects from said semi-insulating layer to said substrate.
Claim 4
Dependent Claim
51 words
Schottky power diode according to claim 2, wherein said substrate has a given conductivity type and doping concentration, and including an auxiliary zone embedded in said substrate and connecting said second contact to said substrate, said auxiliary zone having the same given conductivity type but higher doping concentration than said substrate.
Claim 5
Dependent Claim
24 words
Schottky power diode according to claim 1, wherein said semiinsulating layer is formed of amorphous silicon and said substrate is formed of monocrystalline silicon.
Claim 6
Dependent Claim
26 words
Schottky power diode according to claim 4, wherein said semi-insulating layer has a thickness of between 10 and 50 nm at least at said portion thereof.
Claim 7
Dependent Claim
23 words
Schottky power diode according to claim 1, wherein said first contact extends beyond the edge of said window formed in said insulating layer.
Claim 8
Dependent Claim
20 words
Schottky power diode according to claim 2, wherein said second contact extends on to the surface of said semi-insulating layer.
Claim 9
Dependent Claim
31 words
The Schottky power diode according to claim 1, wherein said portion of said semi-insulating layer has a density of localized states between 10 17 and 10 20 eV cm -3 .
References Cited (Backward Citations)
US3450958A
Cited
US3710204A
Cited
US3763408A
Cited
US3651384A
Cited
US4157563A
Cited
US3890698A
Cited
US4009483A
Cited
US4212100A
Cited
US4220961A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-20 | 1990-04-21 | 1990-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-20 | 1994-04-21 | 1994-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-20 | 1998-04-21 | 1998-10-21 | $7700.00 | Window Closed / Lapsed |