Patent DE734890C successfully refreshed from Google Patents.
US3651384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planar schottky barrier
Assignee: Individual
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Filing: 1971-03-08
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Granted: 1972-03-21
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Expires: 1991-03-08
Abstract
Abstract There is disclosed a high-frequency metal semiconductor junction diode which comprises two layers of insulating material having different etching characteristics so that
Inventors
- 👤 Warren P Waters
- 👤 Byron K Lovelace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10D; H10D99/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
176 words
A metal semiconductor rectifying junction device, comprising in combination: a. a semiconductor substrate; b. a first layer of insulating material selectively overlying and adhering to one major surface of said substrate, said first insulating layer having a first elongated region formed therein; c. a second layer of insulating material selectively overlying and adhering to the outer surface of said first insulating layer and having a second elongated region formed therein, said second region intersecting said first region to define a geometrically shaped region selectively overlying a substantially small geometrically shaped area of the major surface of said substrate with said second insulating layer substantially filling said first region in the areas thereof adjacent to said geometrically shaped region; d. a layer of metal selectively overlying and adhering to the outer surface of said second insulating layer, said metal layer extending into and substantially filling said geometrically shaped region and being in abutment with and adherent to the surface of said geometrically shaped area of said substrate so as to form a metal semiconductor rectifying junction therewith.
Claim 2
Dependent Claim
176 words
A metal semiconductor rectifying junction device, comprising in combination: a. a semiconductor substrate; b. a first layer of insulating material selectively overlying and adhering to one major surface of said substrate, said first insulating layer having a first elongated region formed therein; c. a second layer of insulating material selectively overlying and adhering to the outer surface of said first insulating layer and having a second elongated region formed therein, said second region intersecting said first region to define a geometrically shaped region selectively overlying a substantially small geometrically shaped area of the major surface of said substrate with said second insulating layer substantially filling said first region in the areas thereof adjacent to said geometrically shaped region; d. a layer of metal selectively overlying and adhering to the outer surface of said second insulating layer, said metal layer extending into and substantially filling said geometrically shaped region and being in abutment with and adherent to the surface of said geometrically shaped area of said substrate so as to form a metal semiconductor rectifying junction therewith.
Claim 3
Dependent Claim
39 words
The metal semiconductor rectifying junction device of claim 1 wherein said semiconductor substrate includes an upper layer of lightly doped semiconductor material of one conductivity type and a lower layer of highly doped semiconductor material of said one conductivity.
Claim 4
Dependent Claim
57 words
The metal semiconductor rectifying junction device of claim 1 wherein said device is a diode; and wherein said metal layer is one terminal of said diode; and further including a second layer of metal selectively overlying and adhering to a second major surface of said substrate, said second metal layer being the other terminal of said diode.
Claim 5
Dependent Claim
25 words
The metal semiconductor rectifying junction device of claim 1 wherein said first insulating layer is aluminum trioxide and said second insulating layer is silicon dioxide.
Claim 6
Dependent Claim
29 words
The metal semiconductor rectifying junction of claim 1 wherein the material of said first insulation layer has a slower etch rate than the material of said second insulation layer.
Claim 7
Dependent Claim
40 words
The metal semiconductor rectifying junction of claim 1 wherein the sidewalls of said geometrically shaped regiOn are substantially perpendicular to said substrate, thereby substantially minimizing the shadow effect of said walls so as to produce a uniform metal semiconductor junction.
Claim 8
Dependent Claim
39 words
The metal semiconductor rectifying junction of claim 1 wherein said geometrically shaped region is a parallelepipedon having its sidewalls perpendicular to its faces, and said geometrically shaped area is a parallelogram contiguous with the lower face of said parallelepipedon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-21 | 1975-09-20 | 1976-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-21 | 1979-09-20 | 1980-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-21 | 1983-09-20 | 1984-03-21 | $7700.00 | Window Closed / Lapsed |