US4615010A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor (FET) cascode current switch (FCCS)
Assignee: International Business Machines Corp
•
Filing: 1983-06-27
•
Granted: 1986-09-30
•
Expires: 2003-06-27
Abstract
Abstract A cascode logic design methodology for producing cascode current switch products utilizing Field Effect transistors wherein the field Effect transistors as voltage mode devices serve as current mode devices.
Inventors
- 👤 James W. Davis
- 👤 Frank D. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:24
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/1733; H03K19/1738; G; G06; G06F; G06F30/00; G06F30/30; G06F30/39; H10; H10D; H10D84/00; H10D84/90; H10D84/903
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
131 words
A method of fabricating a master slice wafer for stockpiling in a substock awaiting further steps in defining a completed functional product incorporating Field Effect Transistor Cascode Current Switch (FCCS) circuits, comprising: (1) locating a silicon wafer; and (2) processing said wafer to establish an isolation region, a source/drain diffusion region, and a polysilicon gate region thereon, whereby the vertical structures of all the active components on the wafer is complete, the processing steps being controlled to produce a completed master-slice comprised of two general areas of microblocks including an input/output cell perimeter and a FCCS logic array of Field Effect Transistors arranged into device rails including associated power rails, the microblocks being cascoded into binary decision trees terminated by depletion mode devices for developing logic signals and setting current levels.
Claim 2
Independent Claim
131 words
A method of fabricating a master slice wafer for stockpiling in a substock awaiting further steps in defining a completed functional product incorporating Field Effect Transistor Cascode Current Switch (FCCS) circuits, comprising: (1) locating a silicon wafer; and (2) processing said wafer to establish an isolation region, a source/drain diffusion region, and a polysilicon gate region thereon, whereby the vertical structures of all the active components on the wafer is complete, the processing steps being controlled to produce a completed master-slice comprised of two general areas of microblocks including an input/output cell perimeter and a FCCS logic array of Field Effect Transistors arranged into device rails including associated power rails, the microblocks being cascoded into binary decision trees terminated by depletion mode devices for developing logic signals and setting current levels.
Claim 3
Dependent Claim
175 words
The method of claim 1, comprising further steps to personalize the FCCS master slice wafer from substock for FET cascode current switch applications, comprising the steps of: (1) further processing said master slice wafer by opening contact holes for active and passive components, selectively interconnecting said elements with metal wiring planes connecting to logic terminals thereon to thereby produce a completed personalized wafer, the further processing steps being controlled in accordance with a design methodology that comprises developing primitive logic form such as tree networks or gate array interconnects in FET cascode logic from generic descriptions such as logic maps and truth tables of various machine functional partitions, producing primitive logic machine diagrams with various logic groups and longest path delays, generating clocks from machine diagrams validating and optimizing the primitive logic, and determining hierarchical placement, and hierarchical wiring, generating test pattern; and (2) probe testing the completed personalized wafer, sectioning said wafer into die, sorting out good die, assembling each sorted good die into a package, and testing and performing logic model hardware validation.
References Cited (Backward Citations)
US3458368A
Cited
US3446989A
Cited
US3643232A
Cited
US3618201A
Cited
US3615466A
Cited
US3925684A
Cited
US3978329A
Cited
US4161662A
Cited
US4213117A
Cited
US4255672A
Cited
US4249193A
Cited
US4196228A
Cited
US4295149A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-29 | 1990-03-31 | 1990-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-29 | 1994-03-31 | 1994-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-29 | 1998-03-31 | 1998-09-30 | $7700.00 | Window Closed / Lapsed |