US4608748A — Method of manufacturing a memory FET with shorted…

Claim 1

Independent Claim 190 words

A method of manufacturing a semiconductor device comprising the steps of: (1) forming a first thick insulating film on a semiconductor substrate of a first conductivity type; (2) exposing a portion of the surface of said substrate by selectively etching said first insulating film; (3) forming a second insulating film on said exposed portion of said substrate; (4) forming a first polysilicon layer on said second insulating film; (5) forming gate electrodes of a plurality of MOS transistors by partially removing said polysilicon layer; (6) doping said gate electrodes and forming a first impurity region of a second conductivity type to be source and drain regions of said MOS transistors in said semiconductor substrate; (7) forming a third insulating film on said semiconductor substrate in which said MOS transistors are formed; (8) selectively etching the third insulating film and short-circuiting the source and drain regions of a selected MOS transistor in accordance with a set program; (9) forming a fourth insulating film on at least said shorted MOS transistor; (10) forming contact holes for allowing the formation of electrodes coupled to said first impurity region; and (11) forming said electrodes.

Claim 2

Independent Claim 190 words

A method of manufacturing a semiconductor device comprising the steps of: (1) forming a first thick insulating film on a semiconductor substrate of a first conductivity type; (2) exposing a portion of the surface of said substrate by selectively etching said first insulating film; (3) forming a second insulating film on said exposed portion of said substrate; (4) forming a first polysilicon layer on said second insulating film; (5) forming gate electrodes of a plurality of MOS transistors by partially removing said polysilicon layer; (6) doping said gate electrodes and forming a first impurity region of a second conductivity type to be source and drain regions of said MOS transistors in said semiconductor substrate; (7) forming a third insulating film on said semiconductor substrate in which said MOS transistors are formed; (8) selectively etching the third insulating film and short-circuiting the source and drain regions of a selected MOS transistor in accordance with a set program; (9) forming a fourth insulating film on at least said shorted MOS transistor; (10) forming contact holes for allowing the formation of electrodes coupled to said first impurity region; and (11) forming said electrodes.

Claim 3

Dependent Claim 95 words

The method according to claim 1, wherein said step for shorting the source and drain regions of the selected MOS transistor includes the steps of: (i) selectively removing said third insulating film on at least the channel region between the source region and drain region of said MOS transistor; and (ii) implanting impurity of the second conductivity type into said channel region by using said third insulating film as a mask to form a second impurity region of the second conductivity type for coupling said source and drain regions which constitute said given MOS transistor.

Claim 4

Dependent Claim 59 words

The method according to claim 1, wherein said step for shorting the source and drain regions of the selected MOS transistor includes the steps of: (i) exposing the source and drain regions of said MOS transistor; and (ii) diffusing impurity of the second conductivity type through said exposed portion in order to short said exposed source and drain regions.

Claim 5

Dependent Claim 69 words

The method according to claim 1, wherein said step for shorting the source and drain regions of the selected MOS transistor includes the steps of: (i) exposing the source and drain regions of said MOS transistor; and (ii) forming a second polysilicon layer and doping said layer of the same conductivity as said source and drain regions for shorting said exposed source and drain regions of said MOS transistor.

Claim 6

Independent Claim 88 words

The method according to any one of claims 1 to 4, wherein said step for forming said first impurity region includes the steps of: (i) forming a plurality of gate insulating films for said MOS transistors by etching said second insulating film with a mask of said gate electrodes; (ii) forming said first impurity region of the second conductivity type to be the source and drain regions of said MOS transistors on said semiconductor substrate, with a mask of said gate insulating films and said first insulating film.

Claim 7

Independent Claim 50 words

The method according to any one of claims 1 to 4, wherein said first impurity region of the second conductivity type to be the source and drain regions of said MOS transistors is formed on said semiconductor substrate by an ion implantation process with a mask of said gate electrodes.

Claim 8

Dependent Claim 122 words

In the fabrication of a silicon semiconductor field effect memory device wherein spaced apart source and drain areas are formed on a substrate with a channel extending therebetween and a control gate is formed above the channel with an oxide insulating layer covering the gate and device, an improvement to the process that allows the device to be converted into a normally conducting device late in the fabrication process comprising: masking and etching the device so as to create openings to the source and drain areas on the substrate beside the control gate; and doping said source and drain areas through said openings so as to expand said areas toward each other, under said gate, until they form a continuous conduction path.

Claim 9

Dependent Claim 122 words

In the fabrication of a silicon semiconductor field effect memory device wherein spaced apart source and drain areas are formed on a substrate with a channel extending therebetween and a control gate is formed above the channel with an oxide insulating layer covering the gate and device, an improvement to the process that allows the device to be converted into a normally conducting device late in the fabrication process comprising: masking and etching the device so as to create openings to the source and drain areas on the substrate beside the control gate; and doping said source and drain areas through said openings so as to expand said areas toward each other, under said gate, until they form a continuous conduction path.

Claim 10

Dependent Claim 29 words

The process of claim 7 in which said source and drain areas are additionally doped by forming a doped oxide insulating layer on said device and in said opening.

Claim 11

Dependent Claim 35 words

The process of claim 7 in which the source and drain areas are additionally doped with phosphorus through said openings and thereafter an insulating oxide layer is formed on said device and in said openings.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1989-09-01	1990-03-03	1990-09-02	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1993-09-01	1994-03-03	1994-09-02	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1997-09-01	1998-03-03	1998-09-02	$7700.00	Window Closed / Lapsed

Method of manufacturing a memory FET with shorted source and drain region

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