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Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer

Assignee: ExxonMobil Technology and Engineering Co
•
Filing: 1984-10-05
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Granted: 1986-08-26
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Expires: 2004-10-05
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Abstract

Abstract A method is described for producing an electronically passivated stable surface on silicon wafers. The passivation technique consists of first fluorinating the surface of a crystalline silicon wafer under inert atmospheric conditions. Such a treatment may consist of either a vapor phase or liquid phase application of HF at room temperature. The surface fluorinated wafer is then maintained in an inert atmosphere and a thin coating of an organic solid is applied to the wafer which does not disturb the underlying passivated silicon surface. The wafer may then be further processed into a variety of different devices.

Inventors

  • 👤 Bernard R. Weinberger
  • 👤 Harry W. Deckman
  • 👤 Eli Yablonovitch

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 08:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6534; H10P14/6548; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; Y; Y10; Y10S; Y10S148/00; Y10S148/017

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 56 words
A method for producing an electronically passivated surface on silicon comprising: a. surrounding said surface with an inert atmosphere, b. exposing said surface to a fluorine containing compound, c. maintaining said surface in an inert atmosphere, and d. coating said surface with an air impermeable diffusion barrier in order to prevent degradation of said passivated surface.
Claim 2
Independent Claim 56 words
A method for producing an electronically passivated surface on silicon comprising: a. surrounding said surface with an inert atmosphere, b. exposing said surface to a fluorine containing compound, c. maintaining said surface in an inert atmosphere, and d. coating said surface with an air impermeable diffusion barrier in order to prevent degradation of said passivated surface.
Claim 3
Dependent Claim 28 words
The method of claim 1 wherein said exposing step is carried out by removing the native oxide layer and reacting the exposed surface with a source of fluorine.
Claim 4
Dependent Claim 15 words
The method of claim 1 wherein said exposing step is carried out in one step.
Claim 5
Dependent Claim 18 words
The method of claim 2 wherein said source of fluorine is HF, XeF 2 or a fluorine plasma.
Claim 6
Dependent Claim 22 words
The method of claim 4 wherein said exposing step is performed by immersing said silicon surface into an aqueous solution of HF.
Claim 7
Dependent Claim 21 words
Th method of claim 4 wherein said exposing step is performed by contacting said silicon surface with a vapor including HF.
Claim 8
Dependent Claim 18 words
The method of claim 1 wherein said maintaining step is performed by keeping said surface in a vacuum.
Claim 9
Dependent Claim 23 words
The method of claim 1 wherein said maintaining step is performed by keeping said surface in an inert atmosphere of an inert gas.
Claim 10
Dependent Claim 20 words
The method of claim 1 wherein said coating step is performed in which said diffusion barrier is an organic material.
Claim 11
Dependent Claim 11 words
The method of claim 9 wherein said organic material is tetracene.
Claim 12
Dependent Claim 11 words
The method of claim 9 wherein said organic material is rubrene.
Claim 13
Dependent Claim 21 words
The method of claim 9 wherein said diffusion barrier further comprises a layer of insulator material adjacent to said organic material.
Claim 14
Dependent Claim 21 words
The method of claim 9 wherein said diffusion barrier further comprises a layer of conductor material adjacent to said organic material.
Claim 15
Dependent Claim 12 words
The method of claim 12 wherein said insulator is MgF 2 .
Claim 16
Dependent Claim 11 words
The method of claim 13 wherein said conductor is any metal.

References Cited (Backward Citations)

US2935781A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-08-25 1990-02-24 1990-08-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-08-25 1994-02-24 1994-08-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-08-25 1998-02-24 1998-08-26 $7700.00 Window Closed / Lapsed

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