Patent US2391612A successfully refreshed from Google Patents.
Patent US4604304A successfully refreshed from Google Patents.
US4604304A
Expired / Lapsed
US
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Process of producing thick layers of silicon dioxide
Assignee: RCA Corp
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Filing: 1985-07-03
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Granted: 1986-08-05
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Expires: 2005-07-03
Abstract
Abstract An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to conventional oxidation, the time required for formation of a thick layer of silicon dioxide in accordance with the disclosed process is substantially reduced.
Inventors
- 👤 Lorenzo Faraone
- 👤 David L. Patterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C8/00; C23C8/06; C23C8/08; C23C8/10; H10P14/6322; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/081; Y10S148/118
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
122 words
In a process of providing a thick layer of thermally grown silicon dioxide on a substrate having at least a sufficient thickness of silicon at the surface thereof to form the desired thickness of silicon dioxide, by oxidizing the silicon at an elevated temperature for a time sufficient to form the desired thickness of silicon dioxide, the improvement comprising oxidizing only so much of the silicon as required to form a thin layer of silicon dioxide, depositing a thin layer of silicon over the layer of silicon dioxide, completely oxidizing the silicon layer to increase the thickness of the silicon dioxide layer, and repeating the silicon deposition and oxidation steps if and as necessary to achieve a desired thickness of silicon dioxide.
Claim 2
Dependent Claim
122 words
In a process of providing a thick layer of thermally grown silicon dioxide on a substrate having at least a sufficient thickness of silicon at the surface thereof to form the desired thickness of silicon dioxide, by oxidizing the silicon at an elevated temperature for a time sufficient to form the desired thickness of silicon dioxide, the improvement comprising oxidizing only so much of the silicon as required to form a thin layer of silicon dioxide, depositing a thin layer of silicon over the layer of silicon dioxide, completely oxidizing the silicon layer to increase the thickness of the silicon dioxide layer, and repeating the silicon deposition and oxidation steps if and as necessary to achieve a desired thickness of silicon dioxide.
Claim 3
Dependent Claim
23 words
A process in accordance with claim 1, wherein the final thickness of the layer of silicon dioxide is at least about 1,200 nm.
Claim 4
Dependent Claim
25 words
A process in accordance with claim 1, wherein the thickness of silicon dioxide provided by each oxidation step is between about 250 and 700 nanometers.
Claim 5
Dependent Claim
25 words
A process in accordance with claim 3, wherein the thickness of silicon dioxide provided by each oxidation step is between about 400 and 600 nanometers.
Claim 6
Dependent Claim
16 words
A process in accordance with claim 1, wherein said process includes at least three oxidation steps.
Claim 7
Dependent Claim
52 words
A process in accordance with claim 1, wherein the substrate has on its surface a layer of silicon of sufficient thickness so that oxidation thereof will provide a layer of silicon dioxide from about 250 to 700 nm in thickness so that said layer is totally oxidized in the first oxidation step.
Claim 8
Dependent Claim
32 words
A process in accordance with claim 1, wherein the layers of silicon are deposited in the amorphous state by low pressure chemical vapor deposition at a temperature less than about 580° C.
Claim 9
Dependent Claim
18 words
A process in accordance with claim 7, wherein the layers of silicon are deposited at about 560° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-04 | 1990-02-03 | 1990-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-04 | 1994-02-03 | 1994-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-04 | 1998-02-03 | 1998-08-05 | $7700.00 | Window Closed / Lapsed |