US4341818A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing silicon dioxide/polycrystalline silicon interfaces
Assignee: AT&T Inc
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Filing: 1980-06-16
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Granted: 1982-07-27
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Expires: 2000-06-16
Abstract
Abstract The efficient production of sequential layers of silicon dioxide and polycrystalline silicon is possible using a specific set of reaction steps. This set of reaction steps includes the oxidation of silicon at low oxygen pressure and at temperatures of the magnitude of 900 degrees C., followed by the deposition of polycrystalline silicon at substantially the same temperature utilizing a dichloride silane chemical vapor deposition (CVD) process.
Inventors
- 👤 Arthur C. Adams
- 👤 Hyman J. Levinstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:52
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/52; C04B41/80; C04B41/81; C04B41/89; H; H10; H10P; H10P14/00; H10P14/40; H10P14/416; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
A process for producing a body comprising a region of silicon dioxide in intimate contact with a region of polycrystalline silicon wherein said body is suitable for a semiconductor device application, said process comprising the steps of oxidizing silicon in said body to produce said region of silicon dioxide and depositing said region of polycrystalline silicon on said region of silicon dioxide characterized in that said silicon is oxidized in oxygen at a partial pressure in the range 0.2 to 10 Torr and at an oxidation temperature in the range 900 to 1000 degrees C., said oxygen is removed after oxidation while maintaining a protected environment, and said deposition of polycrystalline silicon is performed utilizing a reactant mixture comprising dichlorosilane wherein said reactant mixture is subjected to a temperature within 1 percent of said oxidation temperature to produce said region of silicon dioxide and wherein said region of polycrystalline silicon is deposited.
Claim 2
Dependent Claim
152 words
A process for producing a body comprising a region of silicon dioxide in intimate contact with a region of polycrystalline silicon wherein said body is suitable for a semiconductor device application, said process comprising the steps of oxidizing silicon in said body to produce said region of silicon dioxide and depositing said region of polycrystalline silicon on said region of silicon dioxide characterized in that said silicon is oxidized in oxygen at a partial pressure in the range 0.2 to 10 Torr and at an oxidation temperature in the range 900 to 1000 degrees C., said oxygen is removed after oxidation while maintaining a protected environment, and said deposition of polycrystalline silicon is performed utilizing a reactant mixture comprising dichlorosilane wherein said reactant mixture is subjected to a temperature within 1 percent of said oxidation temperature to produce said region of silicon dioxide and wherein said region of polycrystalline silicon is deposited.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein said oxidation temperature is in the range 925 to 975 degrees C.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said reactant mixture includes a carrier gas.
Claim 5
Dependent Claim
20 words
The process of claim 3 wherein said carrier gas is chosen from the group consisting of nitrogen, helium and hydrogen.
Claim 6
Dependent Claim
18 words
The process of claim 3 wherein said inert gas is less than 80 percent of the reactant mixture.
Claim 7
Dependent Claim
21 words
The process of claim 1 wherein said dichlorosilane is used at a partial pressure in the range 0.05 to 0.3 Torr.
Claim 8
Dependent Claim
20 words
The process of claim 1 wherein said region of polycrystalline silicon has thickness in the range 2000 to 6000 Angstroms.
Claim 9
Dependent Claim
14 words
The process of claim 1 including the step of doping said polycrystalline silicon region.
Claim 10
Dependent Claim
17 words
The process of claim 1 wherein said silicon dioxide structure is grown on a substrate comprising silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-07-26 | 1986-01-25 | 1986-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-07-26 | 1990-01-25 | 1990-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-07-26 | 1994-01-25 | 1994-07-27 | $7700.00 | Window Closed / Lapsed |