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US4599637A
Expired / Lapsed
US
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Solid state imaging device with photoconductive layer
Assignee: Toshiba Corp
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Filing: 1984-04-26
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Granted: 1986-07-08
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Expires: 2004-04-26
Abstract
Abstract A solid state imaging device having a semiconductor substrate including charge storage sections and charge transferring sections, a photoconductive layer provided on the semiconductor substrate, and a transparent electrode formed on the photoconductive layer. After transferring the charges in the charge storage sections to the charge transferring sections, the transparent electrode is applied with high voltage to release trapped charges at the trap level of the photoconductive layer. Thereby highlight image lag can be reduced.
Inventors
- 👤 Takao Kon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:37
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
102 words
A solid state imaging device comprising: a semiconductor substrate having charge storage sections and charge transferring sections; a photoconductive layer provided on said semiconductor substrate for converting incident light into signal charges; a transparent electrode provided on said photoconductive layer; a means for applying voltage to said transparent electrode after said signal charges in said storage sections are transferred to said charge transferring sections, said voltage causing a release of trapped charges in said photoconductive layer to said transparent electrode; and a clock generator for generating reading pulses enabling to transfer said signal charges in said storage sections to said transferring sections.
Claim 2
Dependent Claim
102 words
A solid state imaging device comprising: a semiconductor substrate having charge storage sections and charge transferring sections; a photoconductive layer provided on said semiconductor substrate for converting incident light into signal charges; a transparent electrode provided on said photoconductive layer; a means for applying voltage to said transparent electrode after said signal charges in said storage sections are transferred to said charge transferring sections, said voltage causing a release of trapped charges in said photoconductive layer to said transparent electrode; and a clock generator for generating reading pulses enabling to transfer said signal charges in said storage sections to said transferring sections.
Claim 3
Dependent Claim
20 words
A solid state imaging device according to claim 1, wherein said charge transferring section comprises a charge coupled device (CCD).
Claim 4
Dependent Claim
18 words
A solid state imaging device according to claim 1, wherein said photoconductive layer is made of amorphous silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-07 | 1990-01-06 | 1990-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-07 | 1994-01-06 | 1994-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-07 | 1998-01-06 | 1998-07-08 | $7700.00 | Window Closed / Lapsed |