US4599133A
Expired / Lapsed
US
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Method of producing single-crystal silicon film
Assignee: Hitachi Ltd
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Filing: 1983-05-04
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Granted: 1986-07-08
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Expires: 2003-05-04
Abstract
Abstract On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.
Inventors
- 👤 Masanobu Miyao
- 👤 Makoto Ohkura
- 👤 Iwao Takemoto
- 👤 Masao Tamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:57
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/34; H; H10; H10P; H10P14/00; H10P14/60; C30B11/00; C30B11/003; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
134 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and (b) single-crystallizing said polycrystalline or amorphous silicon films by irradiating the plurality of polycrystalline or amorphous silicon films at once with a laser beam or an electron beam; the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
Claim 2
Independent Claim
134 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and (b) single-crystallizing said polycrystalline or amorphous silicon films by irradiating the plurality of polycrystalline or amorphous silicon films at once with a laser beam or an electron beam; the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
Claim 3
Dependent Claim
27 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein said insulator films are substantially transparent to said laser beam or electron beam.
Claim 4
Dependent Claim
40 words
A method of producing a single-crystal silicon film as defined in claim 2, wherein said each insulator film is selected from the group consisting of an SiO 2 film, an Si 3 N 4 film and a phosphosilicate glass film.
Claim 5
Dependent Claim
22 words
A method of producing a single-crystal silicon film as defined in claim 3, wherein said laser beam is a YAG laser beam.
Claim 6
Dependent Claim
23 words
A method of producing a single-crystal silicon film as defined in claim 4, wherein said YAG laser beam is a continuous-wave laser beam.
Claim 7
Dependent Claim
27 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein a thickness of each insulator film is approximately 200 Å to 1 μm.
Claim 8
Dependent Claim
33 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein a sum of thicknesses of said plurality of polycrystalline or amorphous silicon films is at most approximately 10 μm.
Claim 9
Dependent Claim
29 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein a thickness of each polycrystalline or amorphous silicon film is 1000 Å to 1 μm.
Claim 10
Dependent Claim
33 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein a magnitude of the irradiation with said laser beam or electron beam is approximately 10 W to 50 W.
Claim 11
Dependent Claim
30 words
A method of producing a single-crystal silicon film as defined in claim 1, wherein an insulator film is formed on the uppermost one of said polycrystalline or amorphous silicon films.
Claim 12
Independent Claim
123 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and (b) single-crystallizing said polycrystalline or amorphous silicon films by heating the plurality of polycrystalline or amorphous silicon films at once with a strip heater; the heat generated by the strip heater being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated.
Claim 13
Independent Claim
123 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a plurality of insulator films each having an opening and a plurality of polycrystalline or amorphous silicon films on one major surface of a single-crystal substrate, said insulator films and said silicon films being alternately stacked with at least a portion of a silicon film being in contact with the single-crystal substrate, and (b) single-crystallizing said polycrystalline or amorphous silicon films by heating the plurality of polycrystalline or amorphous silicon films at once with a strip heater; the heat generated by the strip heater being so controlled and the thickness of the insulator films being so selected that the plurality of polycrystalline or amorphous silicon films are simultaneously heated.
Claim 14
Independent Claim
135 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a first insulator film having an opening on one major surface of a single-crystal silicon substrate; (b) forming a first polycrystalline or amorphous silicon film on said first insulator film; (c) forming a second insulator film having an opening on said first polycrystalline or amorphous silicon film; (d) forming a second polycrystalline or amorphous silicon film on said second insulator film; and (e) irradiating said first and second polycrystalline or amorphous silicon films simultaneously with a laser beam or electron beam; the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that said first and second polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
Claim 15
Independent Claim
135 words
A method of producing a single-crystal silicon film comprising the steps of: (a) forming a first insulator film having an opening on one major surface of a single-crystal silicon substrate; (b) forming a first polycrystalline or amorphous silicon film on said first insulator film; (c) forming a second insulator film having an opening on said first polycrystalline or amorphous silicon film; (d) forming a second polycrystalline or amorphous silicon film on said second insulator film; and (e) irradiating said first and second polycrystalline or amorphous silicon films simultaneously with a laser beam or electron beam; the heat generated by the beam being so controlled and the thickness of the insulator films being so selected that said first and second polycrystalline or amorphous silicon films are simultaneously heated whereby each of the silicon films is single-crystallized.
Claim 16
Dependent Claim
27 words
A method of producing a single-crystal silicon film as defined in claim 12, wherein said laser beam is a YAG laser beam operating in a continuous-wave mode.
Claim 17
Dependent Claim
32 words
A method of producing a single-crystal silicon film as defined in claim 12, wherein the magnitude of irradiation of said laser beam or electron beam is approximately 10 W to 50 W.
Claim 18
Dependent Claim
30 words
A method of producing a single-crystal silicon film as defined in claim 12, wherein each polycrystalline or amorphous silicon film has a thickness of from 1,000 Å to 1 μm.
Claim 19
Dependent Claim
39 words
A method of producing a single-crystalline silicon film as defined in claim 15, wherein each insulator film is formed from a material selected from the group consisting of SiO 2 , Si 3 N 4 and a phosphosilicate glass.
Claim 20
Dependent Claim
27 words
A method of producing a single-crystalline silicon film as defined in claim 12, wherein a thickness of each insulator film is approximately 200 Å to 1 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-07-07 | 1990-01-06 | 1990-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-07 | 1994-01-06 | 1994-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-07 | 1998-01-06 | 1998-07-08 | $7700.00 | Window Closed / Lapsed |