Process for producing a semiconductor device

Claim 2

A process for producing a semiconductor device on a semiconductor substrate, comprising the steps of: (a) forming buried regions within the semiconductor substrate by introducing an impurity; (b) forming an epitaxial layer, having a surface, on the semiconductor substrate and the buried regions; and (c) selectively irradiating the surface of the epitaxial layer with an energy beam to cause diffusion of the impurity from at least one of the buried regions into the epitaxial layer.

Claim 3

A process according to claim 1, wherein the semiconductor substrate comprises a silicon wafer of a first conductivity type.

Claim 4

A process according to claim 1, wherein the first conductivity type is P-type.

Claim 5

A process according to claim 1, wherein the semiconductor substrate is of a first conductivity type and the buried regions are of a second conductivity type which is opposite to the first conductivity type.

Claim 6

A process according to claim 4, wherein the second conductivity type is N-type.

Claim 7

A process according to claim 1, wherein said selective energy irradiation step (c) comprises masking the surface of the epitaxial layer with a masking film made of material which blocks the energy beam.

Claim 8

A process according to claim 1, wherein said selective energy irradiation step (c) comprises selectively scanning the beam on only a required portion of the surface of the epitaxial layer.

Claim 9

A process according to claim 1, the wherein impurity introduced in said step (a) is at least one selected from the group of antimony (Sb), arsenic (As), and phosphorus (P).

Claim 10

A process for producing a semiconductor device on a semiconductor substrate, comprising the steps of: (a) forming first and second buried regions within the semiconductor substrate by introducing first and second impurities, respectively, into the semiconductor substrate; (b) forming an epitaxial layer, having a surface, on the semiconductor substrate and the first and second buried regions; and (c) selectively irradiating the surface of the epitaxial layer with an energy beam to diffuse at least one of the first and second impurities from at least one of the first and second buried regions into the epitaxial layer.

Claim 11

A process for producing a semiconductor device on a semiconductor substrate, comprising the steps of: (a) forming first and second buried regions within the semiconductor substrate by introducing first and second impurities, respectively, into the semiconductor substrate; (b) forming an epitaxial layer, having a surface, on the semiconductor substrate and the first and second buried regions; and (c) selectively irradiating the surface of the epitaxial layer with an energy beam to diffuse at least one of the first and second impurities from at least one of the first and second buried regions into the epitaxial layer.

Claim 12

A process according to claim 9, wherein said selective irradiating step (c) comprises selectively irradiating the surface of the epitaxial layer with an energy beam to diffuse the first impurity from the first buried region into the epitaxial layer, so that the thickness of the first buried region varies lineary along its length.

Claim 13

A process according to claim 9, wherein said selective irradiating step (c) comprises selectively irradiating the surface of the epitaxial layer with an energy beam to diffuse the impurity from a first portion of the first buried region into the epitaxial layer, so that the first portion of the first buried region has a first thickness and a second portion of the first buried region has a second thickness which is less than said first thickness.

Claim 14

A process according to claim 9, 10, or 11, wherein said selective irradiating step (c) comprises masking the surface of the epitaxial layer with a masking film impervious to the energy beam and irradiating the unmasked portion of the surface of the epitaxial layer so as to diffuse the first impurity from the first buried region into the epitaxial layer.

Claim 15

A process according to claim 9, 10, or 11, wherein said selective irradiating step (c) comprises selectively scanning the energy beam on the portion of the surface of the epitaxial layer overlying the first buried region.

Claim 16

A process according to claim 9, wherein the first and second impurities are selected from the group consisting of antimony (Sb), arsenic (As) and phosphorus (P).

Claim 17

A process according to claim 9, wherein said forming step (a) comprises the step of gas diffusing antimony into the semiconductor substrate.