US4597986A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for photochemical vapor deposition
Assignee: Raytheon Co
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Filing: 1985-08-12
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Granted: 1986-07-01
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Expires: 2005-08-12
Abstract
Abstract An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.
Inventors
- 👤 Robert Y. Scapple
- 👤 John W. Peters
- 👤 Jacques F. Linder
- 👤 Edward M. Yee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45578; C23C16/45587; C23C16/45589; C23C16/48; C23C16/482; C23C16/487; C23C16/488
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
280 words
A method for forming a layer of a selected material on the surface of a chosen substrate, said selected material being the product of a photochemical vapor reaction of one or more selected vapor phase reactants, said reaction being induced by radiation of a predetermined wavelength or combination of wavelengths, said method comprising the steps of: (a) providing an outer reactor shell having an inner wall defining the outer limit of a photochemical reaction zone; (b) providing an inner shell concentric with said outer reactor shell, having an outer wall defining the inner limit of said reaction zone, having an inner wall defining a central space in said apparatus, said outer and inner walls being transparent to said radiation of predetermined wavelength or combination of wavelengths; (c) mounting one or more substrates at spaced locations adjacent said inner wall of said outer reactor shell; (d) introducing said selected vapor phase reactants into said reaction zone through a gas manifold having a plurality of spaced outlets directed towards said inner wall of said outer reactor shell, said gas outlets being moved relative to said inner wall to provide uniform distribution of said vapor phase reactants within said reaction zone; (e) producing radiation of a predetermined wavelength or combination or wavelengths sufficient to induce said photochemical vapor reaction to form said layer, said radiation being produced by radiation means located within said central space in said apparatus and isolated from said reaction zone by said inner shell, wherein the quantity and uniformity of said radiation transmitted into said reaction zone is maximized, to thereby provide a uniform said layer of said selected material and an enhanced rate of deposition of said layer.
Claim 2
Independent Claim
280 words
A method for forming a layer of a selected material on the surface of a chosen substrate, said selected material being the product of a photochemical vapor reaction of one or more selected vapor phase reactants, said reaction being induced by radiation of a predetermined wavelength or combination of wavelengths, said method comprising the steps of: (a) providing an outer reactor shell having an inner wall defining the outer limit of a photochemical reaction zone; (b) providing an inner shell concentric with said outer reactor shell, having an outer wall defining the inner limit of said reaction zone, having an inner wall defining a central space in said apparatus, said outer and inner walls being transparent to said radiation of predetermined wavelength or combination of wavelengths; (c) mounting one or more substrates at spaced locations adjacent said inner wall of said outer reactor shell; (d) introducing said selected vapor phase reactants into said reaction zone through a gas manifold having a plurality of spaced outlets directed towards said inner wall of said outer reactor shell, said gas outlets being moved relative to said inner wall to provide uniform distribution of said vapor phase reactants within said reaction zone; (e) producing radiation of a predetermined wavelength or combination or wavelengths sufficient to induce said photochemical vapor reaction to form said layer, said radiation being produced by radiation means located within said central space in said apparatus and isolated from said reaction zone by said inner shell, wherein the quantity and uniformity of said radiation transmitted into said reaction zone is maximized, to thereby provide a uniform said layer of said selected material and an enhanced rate of deposition of said layer.
Claim 3
Dependent Claim
18 words
A method according to claim 1 wherein said outer reactor shell and said inner shell are concentric cylinders.
Claim 4
Dependent Claim
158 words
A method according to claim 1 which further includes maintaining said outer wall of said inner shell in a transparent state throughout said photochemical vapor reaction by preventing deposition of said selected material on said outer wall by: (a) introducing a first portion of a predetermined material in liquid form onto the top portion of said outer wall of said inner shell, said predetermined material being transparent to said radiation of a predetermined wavelength or combination of wavelengths and having a low adhesive affinity for said selected material; (b) spreading said predetermined material into a uniform relatively thin film covering said outer wall of said inner shell; (c) collecting said predetermined material that flows down from said to portion of said outer wall to the bottom portion of said outer wall and separates therefrom; (d) introducing second and subsequent portions of said predetermined material onto the top portion of said outer wall and repeating steps "b" and "c".
Claim 5
Dependent Claim
21 words
A method according to claim 3 wherein said spreading comprises moving wiper means across said outer wall of said inner shell.
Claim 6
Dependent Claim
65 words
A method according to claim 4 wherein said wiper means and said gas manifold are positioned to form a cylindrical cage structure which is concentrically located between said outer reactor shell and said inner shell, said method including the step of rotating said cage structure to provide said uniform distribution of said vapor phase reactants and said spreading of said predetermined material into said film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |