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US4594769A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming insulator of selectively varying thickness on patterned conductive layer

Assignee: Signetics Corp
•
Filing: 1984-06-15
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Granted: 1986-06-17
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Expires: 2004-06-15
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Abstract

Abstract A structure having substantial surface evenness is created by a method in which an insulating layer (24) that has an upward protrusion (26) is formed on a patterned conductive layer (20) having a corresponding upward protrusion (22). A further layer (28) having a generally planar surface is formed on the insulating layer. Using an etchant that attacks the further layer much more than the insulating layer, the further layer is etched to expose at least part of the insulating protrusion. The further layer and the insulating layer (as it becomes exposed) are then etched with an etchant that attacks both of them at rates not substantially different from each other. This brings the upper surface down without exposing the conductive layer, particularly its upward protrusion.

Inventors

  • 👤 Russell C. Ellwanger

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 21:29
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/00; H10P95/06; H10P95/062; H10P95/064

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 166 words
A manufacturing method in which: a body is provided with a patterned first electrically conductive layer having a portion protruding upward beyond adjacent parts of the conductive layer; and an electrically insulating layer is formed on the conductive layer and on adjacent parts of the body such that a portion of the insulating layer protrudes upward beyond adjacent parts of the insulating layer generally at the location above the protruding portion of the conductive layer; characterized by the steps of: forming on the insulating layer a further layer having a generally planar upper surface; exposing at least part of the protruding portion of insulating layer by etching the further layer with a first etchant that attacks material of the further layer much more than material of the insulating layer; and etching the remainder of the further layer and the insulating layer as it becomes exposed with a second etchant that attacks material of the insulating and further layers at rates not substantially different from each other.
Claim 2
Dependent Claim 166 words
A manufacturing method in which: a body is provided with a patterned first electrically conductive layer having a portion protruding upward beyond adjacent parts of the conductive layer; and an electrically insulating layer is formed on the conductive layer and on adjacent parts of the body such that a portion of the insulating layer protrudes upward beyond adjacent parts of the insulating layer generally at the location above the protruding portion of the conductive layer; characterized by the steps of: forming on the insulating layer a further layer having a generally planar upper surface; exposing at least part of the protruding portion of insulating layer by etching the further layer with a first etchant that attacks material of the further layer much more than material of the insulating layer; and etching the remainder of the further layer and the insulating layer as it becomes exposed with a second etchant that attacks material of the insulating and further layers at rates not substantially different from each other.
Claim 3
Dependent Claim 27 words
A method as in claim 1 characterized in that the step of exposing is terminated before exposing parts of the insulating layer adjacent to its protruding portion.
Claim 4
Dependent Claim 23 words
A method as in claim 2 characterized in that the step of etching is terminated before exposing any part of the conductive layer.
Claim 5
Dependent Claim 48 words
A method as in claim 3 characterized by the steps of: opening a via through the remainder of the insulating layer down to the conductive layer; and providing the remainder of insulating layer and the exposed part of the conductive layer with a second patterned electrically conductive layer.
Claim 6
Dependent Claim 42 words
A method as in claim 4 characterized in that the via is made oversize but that the step of opening is terminated before the via extends entirely through the remainder of the insulating layer beyond the edges of the first conductive layer.
Claim 7
Dependent Claim 14 words
A method as in claim 1 characterized in that the further layer comprises photoresist.
Claim 8
Dependent Claim 40 words
A method as in claim 6 characterized in that the step of forming the further layer comprises the steps of: depositing a photoresist layer on the insulating layer; and heating the photoresist layer until its upper surface becomes largely planar.
Claim 9
Dependent Claim 17 words
A method as in claim 7 characterized in that the insulating layer largely comprises a semiconductor oxide.
Claim 10
Dependent Claim 17 words
A method as in claim 8 characterized in that the first etchant is a plasma comprising oxygen.
Claim 11
Dependent Claim 20 words
A method as in claim 9 characterized in that the second etchant is a plasma comprising oxygen and a halocarbon.
Claim 12
Dependent Claim 21 words
A method as in claim 10 characterized in that: the semiconductor oxide comprises silicon dioxide; and the halocarbon comprises carbon tetrafluoride.
Claim 13
Dependent Claim 63 words
A method as in claim 1 wherein the body comprises a monocrystalline semiconductor structure having a surface along which a patterned electrically insulating region has an edge portion protruding upward beyond adjacent parts of the structure and insulating region generally at the location of the protruding portion of the conductive layer, characterized in that the thickness of the conductive layer is largely constant.
Claim 14
Dependent Claim 18 words
A method as in claim 12 characterized in that the insulating layer is formed by chemical vapor deposition
Claim 15
Dependent Claim 17 words
A method as in claim 13 characterized in that the insulating layer is formed at atmospheric pressure.
Claim 16
Dependent Claim 25 words
A method as in claim 14 characterized in that the protruding portion of the insulating layer is thicker than adjacent parts of the insulating layer.
Claim 17
Dependent Claim 18 words
A method as in claim 15 characterized in that the insulating layer is formed at largely constant thickness.

References Cited (Backward Citations)

US3962779A Cited
US4025411A Cited
US4044454A Cited
JPS5383467A Cited
JPS53129970A Cited
EP0012863A2 Cited
JPS5648140A Cited
JPS56108264A Cited
JPS5750436A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-06-16 1989-12-16 1990-06-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-06-16 1993-12-16 1994-06-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-06-16 1997-12-16 1998-06-17 $7700.00 Window Closed / Lapsed

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