Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To attain the whole surface etching for flattening in a short time by changing an incident angle of ion beams into the optimum value in conformity with the materials of each layer when milling a multilayer film shaped on a semiconductor substrate by ions. CONSTITUTION:Let us cite an instance milling a double layer film consisting of a PSG layer 3 and a resist layer 4 by ions. When the speed of etching of the PSG layer and the resist layer is measured by changing the incident angle theta of ion beams, the speed of etching is maximized at theta=40 degree in the PSG layer and at theta=60 degree in the resist layer. When the PSG layer 3 and the resist layer 4 formed on the semiconductor substrate 1 as shown in the figure are ion-milled by ion beams, the incident angle theta of the beams is set to 60 degree and the resist layer 4 is etched. When the incident angle theta is set to an angle of 50 degree, where the speed of etching of both is equal, at the same time as the PSG layer 3 is exposed, a flat etching surface is obtained in a short time.

Inventors

• 👤 Hiroshi Tokunaga

Bibliographic Details