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Patent US4592933A successfully refreshed from Google Patents.
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US4592933A Expired / Lapsed US ⏱️ 0.0 years remaining

High efficiency homogeneous chemical vapor deposition

Assignee: International Business Machines Corp
•
Filing: 1984-06-29
•
Granted: 1986-06-03
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Expires: 2004-06-29
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Abstract

Abstract A technique and apparatus for homogeneous chemical vapor deposition (HCVD), wherein a heated carrier gas is mixed with a source gas in a location close to a substrate on which deposition is to occur. The heated carrier gas transfers heat to the source gas in order to decompose it, producing the intermediate species necessary for deposition onto the substrate. Thus, the source gas is not subjected to heating above its pyrolysis temperature prior to being transported to the immediate vicinity of the substrate. This HCVD apparatus includes a heat source for heating the carrier gas, a tube for bringing the heated carrier gas to a location close to the substrate, and another tube for bringing the reactive source gas to the aforementioned location where it is mixed with the hot carrier gas to cause decomposition of the source gas close to the substrate. The substrate temperature is decoupled from the hot gas temperature and is significantly colder than the hot gas temperature. Simultaneous deposition onto a plurality of substrates is possible, and the system can be scaled-up to provide deposition over a large area.

Inventors

  • 👤 Bernard S. Meyerson
  • 👤 Richard M. Plecenik
  • 👤 Bruce A. Scott

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 20:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/4557; C23C16/45514; C23C16/4558; C30; C30B; C30B25/00; C30B25/02; C30B25/14

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 141 words
A homogeneous chemical vapor deposition (HCVD) method for depositing a film from the vapor phase onto a substrate which is at a temperature independently controllable with respect to the temperature of the vapor phase, comprising the steps of: heating a first gas, bringing said heated first gas to a location in the vicinity of a substrate onto which film deposition is to occur, bringing a reactive source gas to said location, said source gas being at a temperature less than its pyrolysis temperature and containing constituents to be present in said deposited film, intermixing said heated first gas and said source gas at said location to transfer heat from said first gas to said source gas, the amount of heat transferred being sufficient to cause decomposition of said source gas into intermediates which deposit onto said subtrate to produce said film.
Claim 2
Dependent Claim 141 words
A homogeneous chemical vapor deposition (HCVD) method for depositing a film from the vapor phase onto a substrate which is at a temperature independently controllable with respect to the temperature of the vapor phase, comprising the steps of: heating a first gas, bringing said heated first gas to a location in the vicinity of a substrate onto which film deposition is to occur, bringing a reactive source gas to said location, said source gas being at a temperature less than its pyrolysis temperature and containing constituents to be present in said deposited film, intermixing said heated first gas and said source gas at said location to transfer heat from said first gas to said source gas, the amount of heat transferred being sufficient to cause decomposition of said source gas into intermediates which deposit onto said subtrate to produce said film.
Claim 3
Dependent Claim 21 words
The method of claim 1, where said first gas is comprised of a gas which does not decompose upon being heated.
Claim 4
Dependent Claim 16 words
The method of claim 1, where said first gas contains a constituent of said deposited film.
Claim 5
Dependent Claim 11 words
The method of claim 1, where said source gas contains Si.
Claim 6
Dependent Claim 11 words
The method of claim 4, where said first gas contains nitrogen.
Claim 7
Dependent Claim 11 words
The method of claim 4, where said first gas contains oxygen.
Claim 8
Dependent Claim 11 words
The method of claim 1, where said deposited film contains silicon.
Claim 9
Dependent Claim 22 words
The method of claim 1, where said first gas is transported to said location by a tube heated by a surrounding furnace.
Claim 10
Dependent Claim 13 words
The method of claim 1, where said source gas is at room temperature.
Claim 11
Dependent Claim 25 words
The method of claim 1, where said first gas contains a gas species selected from the group consisting of He, H, N, Ar, and Xe.
Claim 12
Dependent Claim 24 words
The method of claim 1, where the distance between said location and said substrate is of the order of 1 mm to 10 cms.
Claim 13
Dependent Claim 12 words
The method of claim 1, where said source gas contains a dopant.

References Cited (Backward Citations)

US3563816A Cited
US3506556A Cited
US3660179A Cited
US3862397A Cited
US3964430A Cited
US4033286A Cited
US4062318A Cited
US4107352A Cited
US4436770A Cited
US4401689A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-06-02 1989-12-02 1990-06-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-06-02 1993-12-02 1994-06-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-06-02 1997-12-02 1998-06-03 $7700.00 Window Closed / Lapsed

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