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US4591916A
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Solid state image pickup device
Assignee: Sony Corp
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Filing: 1983-03-31
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Granted: 1986-05-27
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Expires: 2003-03-31
Abstract
Abstract A solid state image pickup device comprises first switching elements (S' 11 to S' mn ) arrayed in horizontal and vertical rows and composed of a plurality of P-channel insulated-gate field-effect transistors, the first switching elements in each vertical row having one terminals connected in common, a photoelectric transducer layer (17) disposed over the horizontal and vertical rows of the first switching elements (S' 11 to S' mn ) and electrically connected to other terminals of the first switching elements (S' 11 to S' mn ), and a plurality of second switching elements (T 1 to T n ) disposed respectively for the vertical rows of the first switching elements (S' 11 to S' mn ) and connected respectively to the one terminals connected in common of the first switching elements in the respective vertical rows, with the arrangement thereof wherein the horizontal rows of the first switching elements (S' 11 to S' mn ) are selectively energizable and the second switching elements (T 1 to T n ) are selectively energizable to deliver signals based on signal charges generated by the photoelectric conversion layer (17) through the first and second switching elements (S' 11 to S' mn , T 1 to T n ) so as to produce an image pickup signal output.
Inventors
- 👤 Mitsuo Soneda
- 👤 Toshikazu Maekawa
- 👤 Takaji Ohtsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:09
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
258 words
A solid state image pickup device comprising a p-type semiconductor substrate (8), an N-type well (21) formed in said substrate (8), first switching elements (S 11 ' to S mn ') arrayed in horizontal and vertical rows and each of said switching elements composed of P-channel insulated-gate field-effect transistors having two independent P-type regions comprising the drain (9') and the source (10') formed in said N-type well (21), said first switching elements in each vertical row having commonly connected terminals, a photoelectric conversion layer (17) disposed over the horizontal and vertical rows of said first switching elements (S 11 ' to S mn ') and electrically connected to other terminals of said first switching elements (S 11 ' to S mn '), a target electrode (18) on layer (17) and a plurality of second switching elements (T 1 to T n ) disposed respectively for the vertical rows of said first switching elements (S 11 ' to S mn ') and connected respectively to said commonly connected terminals of said first switching elements in the respective vertical rows, with the arrangement thereof wherein the horizontal rows of said first switching elements (S 11 ' to S mn ') are selectively energizable and said second switching elements (T 1 to T n ) are selectively eneregizable to deliver signals based on signal charges generated by said photoelectric transducer layer (17) through said first and second switching elements (S 11 ' to S mn ', T 1 to T n ) so as to produce an image pickup signal output.
Claim 2
Dependent Claim
258 words
A solid state image pickup device comprising a p-type semiconductor substrate (8), an N-type well (21) formed in said substrate (8), first switching elements (S 11 ' to S mn ') arrayed in horizontal and vertical rows and each of said switching elements composed of P-channel insulated-gate field-effect transistors having two independent P-type regions comprising the drain (9') and the source (10') formed in said N-type well (21), said first switching elements in each vertical row having commonly connected terminals, a photoelectric conversion layer (17) disposed over the horizontal and vertical rows of said first switching elements (S 11 ' to S mn ') and electrically connected to other terminals of said first switching elements (S 11 ' to S mn '), a target electrode (18) on layer (17) and a plurality of second switching elements (T 1 to T n ) disposed respectively for the vertical rows of said first switching elements (S 11 ' to S mn ') and connected respectively to said commonly connected terminals of said first switching elements in the respective vertical rows, with the arrangement thereof wherein the horizontal rows of said first switching elements (S 11 ' to S mn ') are selectively energizable and said second switching elements (T 1 to T n ) are selectively eneregizable to deliver signals based on signal charges generated by said photoelectric transducer layer (17) through said first and second switching elements (S 11 ' to S mn ', T 1 to T n ) so as to produce an image pickup signal output.
Claim 3
Dependent Claim
73 words
A solid state image pickup device according to claim 1, wherein said plurality of P-channel insulated-gate field-effect transistors which constitute said first switching elements (S 11 ' to S mn ') have drains electrically connected to said photoelectric conversion layer (17), gates connected in common in the respective horizontal rows, and sources connected in common in the respective vertical rows and to the respective second switching elements (T 1 to T n ).
Claim 4
Dependent Claim
33 words
A solid state image pickup device according to claim 1 or 2, wherein said second switching elements (T 1 to T n ) are composed of a plurality of N-channel insulated-gate field-effect transistors.
Claim 5
Dependent Claim
72 words
A solid state image pickup device according to claim 2, wherein said second switching elements (T 1 to T n ) are composed of a plurality of N-channel insulated-gate field-effect transistors having sources connected respectively to the sources connected in common of the vertical rows of the plurality of P-channel insulated-gate field-effect transistors which constitute said first switching elements (S 11 ' to S mn '), and their drains connected in common.
Claim 6
Dependent Claim
35 words
A solid state image pickup device according to claim 4, wherein said plurality of N-channel insulated-gate field-effect transistors which constitute said second switching elements (T 1 to T n ) are of the depletion type.
References Cited (Backward Citations)
US4209806A
Cited
US4323912A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-26 | 1989-11-25 | 1990-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-26 | 1993-11-25 | 1994-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-26 | 1997-11-25 | 1998-05-27 | $7700.00 | Window Closed / Lapsed |